UPA810T-A Equivalent & Substitute Parts Reference

Part Overview

The UPA810T-A from CEL is an RF Transistor (2 NPN, Dual) designed for use in high-frequency applications up to 4.5GHz with a collector-emitter breakdown voltage of 12V. It features a maximum collector current of 100mA and comes in a SOT-363 surface-mount package. The part is classified as Obsolete, making it necessary to identify suitable substitutes to ensure continuity in production and maintenance for designs that specify UPA810T-A.

Substiute Parts

UPA810T-A
CELIn Stock: 908UPA810T-A Datasheet
UPA810T-A
Current Part
HN3C10FUTE85LF
Toshiba Semiconductor and StorageIn Stock: 1309HN3C10FUTE85LF Datasheet
HN3C10FUTE85LF
Similar

Key Parameters

Manufacturer Part Number Transistor Type Voltage - Collector Emitter Breakdown (Max) Frequency - Transition Noise Figure (dB Typ @ f) Gain Power - Max DC Current Gain (hFE) (Min) @ Ic, Vce Current - Collector (Ic) (Max) Mounting Type Package / Case Supplier Device Package Moisture Sensitivity Level (MSL) Product Status
UPA810T-A 2 NPN (Dual) 12V 4.5GHz 1.2dB @ 1GHz 9dB 200mW 70 @ 7mA, 3V 100mA Surface Mount 6-TSSOP, SC-88, SOT-363 SOT-363 1 (Unlimited) Obsolete

Substitute Part Grouping Explanation

Substitute parts for the UPA810T-A are selected strictly based on electrical and mechanical compatibility. The key parameters used for grouping and substitution include: Transistor Type (2 NPN, Dual), Collector-Emitter Voltage (Max), Transition Frequency, Noise Figure, Gain, Maximum Power, DC Current Gain, Maximum Collector Current, Mounting Type, Package/Case, and Moisture Sensitivity Level (MSL). Only substitute models matching these provided specifications are considered suitable alternatives.

Parameter Comparison

Manufacturer Part Number Manufacturer Transistor Type Voltage - Collector Emitter Breakdown (Max) Frequency - Transition Noise Figure (dB Typ @ f) Gain Power - Max DC Current Gain (hFE) (Min) @ Ic, Vce Current - Collector (Ic) (Max) Mounting Type Package / Case Supplier Device Package Moisture Sensitivity Level (MSL) Product Status
UPA810T-A CEL 2 NPN (Dual) 12V 4.5GHz 1.2dB @ 1GHz 9dB 200mW 70 @ 7mA, 3V 100mA Surface Mount 6-TSSOP, SC-88, SOT-363 SOT-363 1 (Unlimited) Obsolete
HN3C10FUTE85LF Toshiba Semiconductor and Storage 2 NPN (Dual) 12V 7GHz 1.1dB @ 1GHz 11.5dB 200mW 80 @ 20mA, 10V 80mA Surface Mount 6-TSSOP, SC-88, SOT-363 US6 1 (Unlimited) Active

Engineering Selection Recommendations

Selection of substitute parts must be based on the product status and compliance information provided. The UPA810T-A is classified as Obsolete, whereas the HN3C10FUTE85LF is Active and RoHS Compliant. Both parts meet the Moisture Sensitivity Level (MSL) requirement of 1 (Unlimited).

Frequently Asked Questions (FAQ)

Q1: What parameters must be matched when substituting UPA810T-A with HN3C10FUTE85LF?
A1: Substitution requires matching Transistor Type, Collector-Emitter Voltage (Max), Transition Frequency, Noise Figure, Gain, Maximum Power, DC Current Gain, Maximum Collector Current, Mounting Type, Package/Case, Supplier Device Package, and Moisture Sensitivity Level.

Q2: Are there differences in packaging between UPA810T-A and HN3C10FUTE85LF?
A2: Both are compatible with 6-TSSOP, SC-88, SOT-363 forms; however, HN3C10FUTE85LF is supplied in US6 package.

Q3: Is the substitute part compliant with current environmental regulations?
A3: HN3C10FUTE85LF is RoHS Compliant as provided in the parameters.

Q4: Does product status affect substitution compatibility?
A4: Only Active status substitutes such as HN3C10FUTE85LF should be considered when replacing an Obsolete part like UPA810T-A.

Q5: How does Moisture Sensitivity Level (MSL) influence part selection?
A5: Both UPA810T-A and HN3C10FUTE85LF meet the MSL 1 (Unlimited) requirement, ensuring suitability for surface mount manufacturing environments.

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