UPA800T-A Equivalent & Substitute Parts Reference

Part Overview

The UPA800T-A by CEL is an RF transistor designated under the Transistors, Bipolar (BJT) category. Its function encompasses dual NPN operation, intended for RF amplification up to 8GHz, in a compact SOT-363 surface mount package. This product is officially listed as obsolete, necessitating the identification of alternative models for ongoing design support, inventory maintenance, or replacement in existing assemblies.

Substiute Parts

UPA800T-A
CELIn Stock: 1035UPA800T-A Datasheet
UPA800T-A
Current Part
HN3C10FUTE85LF
Toshiba Semiconductor and StorageIn Stock: 1309HN3C10FUTE85LF Datasheet
HN3C10FUTE85LF
Similar

Key Parameters

Part Number Transistor Type Voltage - Collector Emitter Breakdown (Max) Frequency - Transition Noise Figure (dB Typ @ f) Gain Power - Max DC Current Gain (hFE) (Min) @ Ic, Vce Current - Collector (Ic) (Max) Mounting Type Package / Case Supplier Device Package Moisture Sensitivity Level (MSL) Product Status
UPA800T-A 2 NPN (Dual) 10V 8GHz 1.9dB @ 2GHz 7.5dB 200mW 80 @ 5mA, 3V 35mA Surface Mount 6-TSSOP, SC-88, SOT-363 SOT-363 1 (Unlimited) Obsolete

Substitute Part Grouping Explanation

Substitute selection for RF transistor UPA800T-A employs matching by the following key parameters: transistor type (2 NPN dual), collector-emitter breakdown voltage, frequency transition capability, similar noise figure, gain, maximum allowed power dissipation, minimum DC current gain at specified conditions, maximum collector current, mounting type, compatible package/case, and moisture sensitivity criteria. Only substitute parts with matched or compatible status within these technical fields are included.

Parameter Comparison

Part Number Transistor Type Voltage - Collector Emitter Breakdown (Max) Frequency - Transition Noise Figure (dB Typ @ f) Gain Power - Max DC Current Gain (hFE) (Min) @ Ic, Vce Current - Collector (Ic) (Max) Mounting Type Package / Case Supplier Device Package Moisture Sensitivity Level (MSL) Product Status
UPA800T-A 2 NPN (Dual) 10V 8GHz 1.9dB @ 2GHz 7.5dB 200mW 80 @ 5mA, 3V 35mA Surface Mount 6-TSSOP, SC-88, SOT-363 SOT-363 1 (Unlimited) Obsolete
HN3C10FUTE85LF 2 NPN (Dual) 12V 7GHz 1.1dB @ 1GHz 11.5dB 200mW 80 @ 20mA, 10V 80mA Surface Mount 6-TSSOP, SC-88, SOT-363 US6 1 (Unlimited) Active

Engineering Selection Recommendations

The UPA800T-A is obsolete and no longer in production, requiring substitution for continued usage. Substitute part HN3C10FUTE85LF by Toshiba Semiconductor and Storage is RoHS compliant, possesses MSL 1 (Unlimited), is designated as active, and includes stock availability. These factors satisfy procurement and compliance requirements and allow direct replacement consideration based purely on status and supplied certifications.

Frequently Asked Questions (FAQ)

Q: What key functional parameters are used for substitution in the Transistors, Bipolar (BJT) category?
A: Substitution is based on transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, maximum power, DC current gain at specified conditions, collector current maximum, mounting type, package/case, and moisture sensitivity level.

Q: Are the UPA800T-A and HN3C10FUTE85LF compatible in terms of mounting and package?
A: Both are surface mount devices specified for use in SOT-363-related outlines, providing direct mechanical compatibility according to the provided package information.

Q: How does product status affect selection?
A: UPA800T-A is marked obsolete, necessitating selection of an active substitute. HN3C10FUTE85LF is active and available in inventory.

Q: Are moisture sensitivity and compliance criteria matched?
A: Both parts list Moisture Sensitivity Level (MSL) 1 (Unlimited). The substitute part is additionally RoHS compliant according to supplied data.

Q: Does the substitute part provide adequate electrical performance based strictly on the parameters present?
A: The substitute HN3C10FUTE85LF meets or exceeds the required electrical and mechanical criteria, considering only the provided specifications.

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