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UPA2670T1R-E2-AX Equivalent & Substitute Parts
Part Overview
The UPA2670T1R-E2-AX is a dual P-channel MOSFET array manufactured by Renesas Electronics Corporation, rated for 20V drain-to-source voltage and 3A continuous drain current. This component is designed for surface mount applications in a 6-HUSON (2x2) package with logic level gate drive capability at 1.8V. The device is classified as obsolete, necessitating identification of active equivalent parts to maintain design continuity and ensure long-term component availability for new production and field replacements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 20 | V |
| Continuous Drain Current (Id) @ 25°C | 3 | A |
| On-Resistance (Rds On) @ 1.5A, 4.5V | 79 | mOhm |
| Gate Charge (Qg) @ 4.5V | 5.1 | nC |
| Input Capacitance (Ciss) @ 10V | 473 | pF |
| Maximum Power Dissipation | 2.3 | W |
| Operating Temperature (TJ) | 150 | °C |
| Configuration | 2 P-Channel (Dual) | — |
| Package Type | 6-WFDFN Exposed Pad | — |
| FET Feature | Logic Level Gate, 1.8V Drive | — |
Substitute Part Grouping Explanation
Substitution of the UPA2670T1R-E2-AX is determined by electrical and mechanical compatibility across the following critical parameters:
Electrical Compatibility Criteria:
- Drain-to-source voltage rating must equal or exceed 20V
- Continuous drain current must meet or exceed 3A at 25°C
- On-resistance characteristics must support equivalent switching performance
- Gate charge and input capacitance must remain within acceptable operating margins
- Maximum power dissipation capability must accommodate thermal requirements
Mechanical Compatibility Criteria:
- Dual P-channel configuration required
- Surface mount package with 6-pin footprint (6-WFDFN or equivalent 6-µDFN)
- Exposed pad design for thermal management
- Logic level gate drive capability
Compliance Requirements:
- RoHS3 compliance mandatory
- Moisture sensitivity level MSL 1 (unlimited shelf life)
- EAR99 export classification
- HTSUS code 8541.29.0095
The SSM6P47NU,LF from Toshiba Semiconductor and Storage meets these substitution criteria with enhanced electrical performance characteristics while maintaining package compatibility and regulatory compliance.
Parameter Comparison
| Parameter | UPA2670T1R-E2-AX (Renesas) | SSM6P47NU,LF (Toshiba) | Unit |
|---|---|---|---|
| Manufacturer | Renesas Electronics Corporation | Toshiba Semiconductor and Storage | — |
| Product Status | Obsolete | Active | — |
| Configuration | 2 P-Channel (Dual) | 2 P-Channel (Dual) | — |
| Drain to Source Voltage (Vdss) | 20 | 20 | V |
| Continuous Drain Current (Id) @ 25°C | 3 | 4 | A |
| On-Resistance (Rds On) @ 1.5A, 4.5V | 79 | 95 | mOhm |
| Gate Charge (Qg) @ 4.5V | 5.1 | 4.6 | nC |
| Input Capacitance (Ciss) @ 10V | 473 | 290 | pF |
| Maximum Power Dissipation | 2.3 | 1 | W |
| Operating Temperature (TJ) | 150 | 150 | °C |
| Package / Case | 6-WFDFN Exposed Pad | 6-WDFN Exposed Pad | — |
| FET Feature | Logic Level Gate, 1.8V Drive | Logic Level Gate | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
| ECCN | EAR99 | EAR99 | — |
| HTSUS Code | 8541.29.0095 | 8541.29.0095 | — |
Engineering Selection Recommendations
Primary Substitute: SSM6P47NU,LF
The SSM6P47NU,LF is the designated equivalent for the obsolete UPA2670T1R-E2-AX. This Toshiba component provides direct functional replacement with the following advantages:
Product Status: The SSM6P47NU,LF maintains active production status, ensuring long-term availability and supply chain continuity compared to the obsolete UPA2670T1R-E2-AX.
Electrical Performance: The substitute delivers enhanced drain current capability (4A versus 3A), lower gate charge (4.6nC versus 5.1nC), and reduced input capacitance (290pF versus 473pF). These characteristics result in improved switching efficiency and reduced gate drive requirements.
Regulatory Compliance: Both components maintain identical RoHS3 compliance, MSL 1 moisture sensitivity rating, EAR99 export classification, and HTSUS code 8541.29.0095, ensuring regulatory equivalence for procurement and deployment.
Package Compatibility: Both devices utilize 6-pin surface mount packages with exposed pad design (6-WFDFN and 6-µDFN respectively), supporting direct footprint compatibility in existing PCB layouts.
Thermal Considerations: While the SSM6P47NU,LF specifies lower maximum power dissipation (1W versus 2.3W), the reduced on-resistance and improved switching characteristics typically result in lower actual power consumption in typical operating conditions.
Frequently Asked Questions (FAQ)
Q: Can the SSM6P47NU,LF directly replace the UPA2670T1R-E2-AX without PCB modifications?
A: Yes. Both components utilize compatible 6-pin surface mount packages with exposed pad design. The footprint and pinout are electrically equivalent, supporting direct PCB replacement without layout changes.
Q: What are the key electrical differences between these two parts?
A: The SSM6P47NU,LF provides higher continuous drain current (4A versus 3A), lower gate charge (4.6nC versus 5.1nC), and reduced input capacitance (290pF versus 473pF). On-resistance is slightly higher (95mOhm versus 79mOhm at 1.5A, 4.5V). These differences result in improved switching speed and reduced gate drive power consumption.
Q: Why is the UPA2670T1R-E2-AX classified as obsolete?
A: The UPA2670T1R-E2-AX has been discontinued by Renesas Electronics Corporation. The SSM6P47NU,LF from Toshiba is the active equivalent part recommended for new designs and field replacements.
Q: Are there any compliance or certification differences between these parts?
A: No. Both components maintain identical RoHS3 compliance, MSL 1 moisture sensitivity rating, EAR99 export classification, and HTSUS code 8541.29.0095. Regulatory and compliance requirements are fully equivalent.
Q: What is the significance of the logic level gate drive specification?
A: Both parts feature logic level gate drive capability, enabling direct interface with standard digital logic circuits operating at 3.3V or 5V. The UPA2670T1R-E2-AX specifies 1.8V drive capability, while the SSM6P47NU,LF specifies general logic level gate operation. Both support standard microcontroller and FPGA gate drive voltages.
Q: How do the power dissipation ratings affect component selection?
A: The UPA2670T1R-E2-AX specifies 2.3W maximum power dissipation, while the SSM6P47NU,LF specifies 1W. In typical applications, the lower on-resistance and gate charge of the SSM6P47NU,LF result in reduced actual power consumption despite the lower rated maximum. Thermal design should account for actual operating conditions rather than maximum ratings.
Q: Is the SSM6P47NU,LF available in the same packaging format?
A: Both components use 6-pin surface mount packages with exposed pad design. The UPA2670T1R-E2-AX uses 6-WFDFN packaging, while the SSM6P47NU,LF uses 6-µDFN packaging. These packages are mechanically and electrically compatible for PCB implementation.
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