UNR511F00L Equivalent & Substitute Parts

Part Overview

The UNR511F00L is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Panasonic Electronic Components. This surface mount device operates at 50 V maximum collector-emitter breakdown voltage with a maximum collector current of 100 mA and is housed in an SMini3-G1 package (SC-70, SOT-323 footprint). The device is classified as obsolete, making identification of equivalent substitute parts essential for ongoing production and maintenance applications.

Pre-biased BJT transistors integrate internal base resistors to simplify circuit design and reduce component count. The UNR511F00L incorporates a 4.7 kOhm base resistor (R1) and a 10 kOhm emitter-base resistor (R2), enabling direct logic-level switching without external biasing networks. The obsolete status of this component necessitates evaluation of active substitute parts that maintain electrical and mechanical compatibility.

Substiute Parts

UNR511F00L
Panasonic Electronic ComponentsIn Stock: 1110UNR511F00L Datasheet
UNR511F00L
Current Part
DDTA143XUA-7-F
Diodes IncorporatedIn Stock: 2360DDTA143XUA-7-F Datasheet
DDTA143XUA-7-F
Similar
PDTA143XU,115
NXP SemiconductorsIn Stock: 2408PDTA143XU,115 Datasheet
PDTA143XU,115
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) Min 30
Frequency - Transition 80 MHz
Power - Max 150 mW
Package / Case SC-70, SOT-323
Mounting Type Surface Mount
RoHS Status RoHS non-compliant

Substitute Part Grouping Explanation

Substitution of the UNR511F00L is determined by strict equivalence across the following critical parameters:

Mandatory Electrical Parameters:

  • Transistor type: PNP - Pre-Biased configuration
  • Maximum collector current: 100 mA
  • Maximum collector-emitter breakdown voltage: 50 V
  • Base resistor (R1): 4.7 kOhms
  • Emitter-base resistor (R2): 10 kOhms
  • Minimum DC current gain (hFE): 30 or greater
  • Transition frequency: 80 MHz or greater

Mandatory Mechanical Parameters:

  • Package / Case: SC-70 or SOT-323
  • Mounting type: Surface Mount

Substitute parts must satisfy all electrical parameters at or above the specified minimums. The internal resistor values (R1 and R2) are critical to circuit operation and must match exactly. Transition frequency and power dissipation ratings may exceed the original specification without affecting compatibility. Package footprint equivalence ensures mechanical interchangeability on printed circuit boards.

Parameter Comparison

Parameter UNR511F00L (Panasonic) DDTA143XUA-7-F (Diodes Inc.) PDTA143XU,115 (NXP)
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) Max 100 mA 100 mA Not specified
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V Not specified
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms Not specified
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms Not specified
DC Current Gain (hFE) Min 30 @ 5mA, 10V 30 @ 10mA, 5V Not specified
Frequency - Transition 80 MHz 250 MHz Not specified
Power - Max 150 mW 200 mW Not specified
Package / Case SC-70, SOT-323 SC-70, SOT-323 Not specified
Mounting Type Surface Mount Surface Mount Not specified
Product Status Obsolete Active Active
RoHS Status RoHS non-compliant ROHS3 Compliant Not specified

Engineering Selection Recommendations

DDTA143XUA-7-F (Diodes Incorporated) is the primary recommended substitute for the UNR511F00L. This part satisfies all mandatory electrical and mechanical parameters with exact equivalence in collector current (100 mA), collector-emitter breakdown voltage (50 V), and internal resistor values (R1 = 4.7 kOhms, R2 = 10 kOhms). The DDTA143XUA-7-F exceeds the original specification in transition frequency (250 MHz versus 80 MHz) and power dissipation (200 mW versus 150 mW), providing enhanced performance margin. The device maintains active product status and holds ROHS3 compliance certification, supporting modern manufacturing and environmental requirements. Packaging is identical (SOT-323), ensuring direct mechanical interchangeability.

PDTA143XU,115 (NXP Semiconductors) is listed as an equivalent substitute based on the original component documentation. However, critical electrical parameters including maximum collector current, collector-emitter breakdown voltage, and internal resistor values are not specified in the available data. This part maintains active product status and is REACH unaffected. Selection of this substitute requires verification against detailed NXP datasheets to confirm parameter equivalence before implementation.

For applications requiring RoHS compliance, DDTA143XUA-7-F is the appropriate selection. For applications with no RoHS requirement, both DDTA143XUA-7-F and PDTA143XU,115 are listed as valid substitutes, with DDTA143XUA-7-F offering complete parameter documentation.

Frequently Asked Questions (FAQ)

Q: Can the DDTA143XUA-7-F directly replace the UNR511F00L without circuit modification?

A: Yes. The DDTA143XUA-7-F maintains identical electrical specifications for collector current (100 mA), collector-emitter breakdown voltage (50 V), and internal resistor values (R1 = 4.7 kOhms, R2 = 10 kOhms). The SOT-323 package footprint is mechanically equivalent to the SMini3-G1 package. No circuit modifications are required.

Q: What is the significance of the internal resistor values (R1 and R2)?

A: The internal resistors (R1 = 4.7 kOhms base resistor, R2 = 10 kOhms emitter-base resistor) define the pre-biasing network of the transistor. These values directly determine switching characteristics and input impedance. Substitutes must have identical resistor values to maintain circuit performance. Deviations in these values will alter switching speed, input current requirements, and overall circuit behavior.

Q: Why is the transition frequency higher in the DDTA143XUA-7-F (250 MHz) compared to the UNR511F00L (80 MHz)?

A: Higher transition frequency indicates faster switching capability. The DDTA143XUA-7-F can operate at higher frequencies than the original part. This represents an enhancement that does not compromise compatibility. Applications operating at or below 80 MHz will function identically with either part.

Q: Is the PDTA143XU,115 a suitable substitute if complete parameter data is unavailable?

A: The PDTA143XU,115 is listed in the original component documentation as an equivalent substitute. However, critical parameters including maximum collector current, collector-emitter breakdown voltage, and internal resistor values are not provided in the available data. Confirmation against the NXP datasheet is necessary before selection for new designs or critical applications.

Q: What is the impact of RoHS compliance on substitute selection?

A: The original UNR511F00L is RoHS non-compliant. The DDTA143XUA-7-F is ROHS3 compliant. For applications subject to RoHS regulations or customer requirements, DDTA143XUA-7-F is the appropriate selection. For applications with no RoHS requirement, both parts are functionally equivalent.

Q: Are there packaging differences between the UNR511F00L and DDTA143XUA-7-F?

A: Both parts use the SOT-323 package (also designated SC-70). The footprint and pin configuration are identical, enabling direct board-level substitution without layout modifications. The UNR511F00L uses the supplier designation SMini3-G1, which is equivalent to SOT-323.

Q: Can the DDTA143XUA-7-F be used in applications originally designed for the UNR511F00L?

A: Yes. The DDTA143XUA-7-F meets or exceeds all electrical specifications of the UNR511F00L. The identical internal resistor configuration ensures switching characteristics remain unchanged. The higher transition frequency and power rating provide additional performance margin without affecting circuit operation.

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