UNR511600L Equivalent & Substitute Parts

Part Overview

The Panasonic UNR511600L is a pre-biased PNP bipolar junction transistor (BJT) designed for surface mount applications in the SMini3-G1 package. This component operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 150 MHz transition frequency. The UNR511600L is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, base resistor value, and saturation characteristics while accommodating modern RoHS compliance requirements.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Pre-Biased	—
Voltage - Collector Emitter Breakdown (Max)	50	V
Current - Collector (Ic) (Max)	100	mA
Resistor - Base (R1)	4.7	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 5mA, 10V	—
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA	—
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	150	MHz
Power - Max	150	mW
Package / Case	SC-70, SOT-323	—
Mounting Type	Surface Mount	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the UNR511600L is determined by strict electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Voltage - Collector Emitter Breakdown (Max): Must equal or exceed 50 V
Current - Collector (Ic) (Max): Must equal or exceed 100 mA
Resistor - Base (R1): Must match 4.7 kOhms for circuit bias point preservation
Package / Case: Must be SC-70 or SOT-323 for mechanical fit
Mounting Type: Must be Surface Mount

Substitute Classification:

Direct Substitutes maintain all critical electrical parameters including the 4.7 kOhms base resistor value:

MUN5116T1G (onsemi) — Active product status, higher power rating (202 mW), RoHS3 compliant
RN2310(TE85L,F) (Toshiba) — Active product status, higher transition frequency (200 MHz), RoHS compliant
RN2310,LF (Toshiba) — Active product status, RoHS3 compliant variant
DDTA143TUA-7-F (Diodes Incorporated) — Active product status, higher transition frequency (250 MHz), RoHS3 compliant
DTA143TUAT106 (Rohm Semiconductor) — Active product status, higher transition frequency (250 MHz), RoHS3 compliant
PDTA143TU,115 (Nexperia USA Inc.) — Active product status, superior saturation characteristics, RoHS3 compliant

Similar Substitutes maintain core electrical parameters but differ in base resistor value, requiring circuit evaluation:

DDTA114TUA-7-F (Diodes Incorporated) — 10 kOhms base resistor, higher transition frequency (250 MHz)
DDTA124TUA-7-F (Diodes Incorporated) — 22 kOhms base resistor, higher transition frequency (250 MHz)

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	R1 kOhms	hFE (Min)	Vce Sat (Max) mV	fT MHz	Power mW	Package	Status	RoHS
UNR511600L	Panasonic	100	50	4.7	160 @ 5mA, 10V	250 @ 300µA, 10mA	150	150	SMini3-G1	Obsolete	Non-compliant
MUN5116T1G	onsemi	100	50	4.7	160 @ 5mA, 10V	250 @ 1mA, 10mA	—	202	SC-70-3	Active	ROHS3
RN2310(TE85L,F)	Toshiba	100	50	4.7	120 @ 1mA, 5V	300 @ 250µA, 5mA	200	100	SC-70	Active	Compliant
RN2310,LF	Toshiba	100	50	4.7	120 @ 1mA, 5V	300 @ 250µA, 5mA	200	100	SC-70	Active	ROHS3
DDTA143TUA-7-F	Diodes Incorporated	100	50	4.7	100 @ 1mA, 5V	300 @ 250µA, 2.5mA	250	200	SOT-323	Active	ROHS3
DTA143TUAT106	Rohm Semiconductor	100	50	4.7	100 @ 1mA, 5V	300 @ 250µA, 5mA	250	200	UMT3	Active	ROHS3
PDTA143TU,115	Nexperia USA Inc.	100	50	4.7	200 @ 1mA, 5V	150 @ 250µA, 5mA	—	200	SOT-323	Active	ROHS3
DDTA114TUA-7-F	Diodes Incorporated	100	50	10	100 @ 1mA, 5V	300 @ 100µA, 1mA	250	200	SOT-323	Active	ROHS3
DDTA124TUA-7-F	Diodes Incorporated	100	50	22	100 @ 1mA, 5V	300 @ 500µA, 5mA	250	200	SOT-323	Active	ROHS3

Engineering Selection Recommendations

Primary Substitutes for Direct Replacement:

The MUN5116T1G (onsemi), RN2310(TE85L,F) (Toshiba), and PDTA143TU,115 (Nexperia) are recommended as primary substitutes. All three maintain the 4.7 kOhms base resistor specification, ensuring circuit bias point compatibility with the original UNR511600L design. MUN5116T1G offers the highest power dissipation capability (202 mW) and is RoHS3 compliant. PDTA143TU,115 provides superior saturation characteristics (150 mV maximum) and higher DC current gain (200 minimum), beneficial for switching applications. RN2310(TE85L,F) and RN2310,LF provide active product status with established supply chains and RoHS compliance.

Secondary Substitutes with Circuit Evaluation:

DDTA143TUA-7-F (Diodes Incorporated) and DTA143TUAT106 (Rohm Semiconductor) maintain the 4.7 kOhms base resistor and offer enhanced transition frequency (250 MHz). Both are RoHS3 compliant with active product status and high inventory availability. DDTA114TUA-7-F and DDTA124TUA-7-F feature different base resistor values (10 kOhms and 22 kOhms respectively) and require circuit analysis to confirm bias point compatibility before implementation.

Compliance Considerations:

All recommended active substitutes are RoHS3 compliant, addressing the non-compliant status of the obsolete UNR511600L. Moisture sensitivity level remains consistent at MSL 1 (Unlimited) across all substitutes, eliminating moisture-related handling concerns.

Frequently Asked Questions (FAQ)

Q: Can I use DDTA114TUA-7-F or DDTA124TUA-7-F as direct replacements for UNR511600L?

A: These parts maintain the same voltage rating (50 V), current rating (100 mA), and package compatibility (SOT-323). However, the base resistor values differ (10 kOhms and 22 kOhms respectively versus 4.7 kOhms in the original). This affects the bias point and switching characteristics. Circuit evaluation is required to confirm compatibility with your specific application before substitution.

Q: What is the primary advantage of PDTA143TU,115 over other substitutes?

A: PDTA143TU,115 provides superior saturation voltage characteristics (150 mV maximum at 250 µA base current, 5 mA collector current) compared to the original UNR511600L (250 mV) and most other substitutes (300 mV). This results in lower power dissipation during saturation and improved switching efficiency in digital logic applications.

Q: Are all substitute parts RoHS compliant?

A: Yes. All active substitute parts listed are RoHS3 compliant. The original UNR511600L is RoHS non-compliant. Substitution with any recommended part addresses regulatory compliance requirements for new designs and production.

Q: What is the difference between RN2310(TE85L,F) and RN2310,LF?

A: Both are Toshiba RN2310 variants with identical electrical specifications. RN2310(TE85L,F) is supplied in Tape & Reel packaging, while RN2310,LF is the lead-free variant. RN2310,LF carries RoHS3 compliance certification. Select based on packaging requirements and compliance documentation needs.

Q: Can I substitute MUN5116T1G for UNR511600L in high-power applications?

A: MUN5116T1G supports higher power dissipation (202 mW versus 150 mW in the original). This provides additional thermal margin in applications approaching the original power limit. The identical base resistor value (4.7 kOhms) ensures circuit bias point compatibility.

Q: What package considerations apply when substituting these parts?

A: The original UNR511600L uses SMini3-G1 package. Substitute parts use SC-70, SOT-323, or UMT3 packages. All are mechanically compatible surface mount packages with identical pin configurations and footprints suitable for standard pick-and-place assembly. Verify PCB footprint compatibility with your specific package variant before production implementation.

Q: Which substitute offers the best transition frequency performance?

A: DDTA143TUA-7-F, DDTA114TUA-7-F, DDTA124TUA-7-F, and DTA143TUAT106 all provide 250 MHz transition frequency, compared to 150 MHz in the original UNR511600L. This enhanced frequency response supports higher-speed switching applications. RN2310 variants offer 200 MHz transition frequency as an intermediate option.

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