UNR511100L Equivalent & Substitute Parts

Part Overview

The UNR511100L is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Panasonic Electronic Components, designed for surface mount applications in the SMini3-G1 package. This device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 150 mW power dissipation. The part is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain electrical and mechanical compatibility for ongoing production and repair applications.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Pre-Biased	—
Voltage - Collector Emitter Breakdown (Max)	50	V
Current - Collector (Ic) (Max)	100	mA
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	10	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 5mA, 10V	—
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA	—
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	80	MHz
Power - Max	150	mW
Mounting Type	Surface Mount	—
Package / Case	SC-70, SOT-323	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the UNR511100L is determined by strict electrical and mechanical parameter matching. The critical parameters that define substitutability are:

Electrical Parameters:

Transistor type: PNP - Pre-Biased configuration
Voltage rating: 50 V collector-emitter breakdown (minimum requirement)
Current rating: 100 mA maximum collector current (minimum requirement)
Base and emitter-base resistor values: 10 kOhms (R1) and 10 kOhms (R2)
DC current gain: 35 minimum at specified test conditions
Saturation voltage: 250 mV maximum at specified conditions
Collector cutoff current: 500 nA maximum

Mechanical Parameters:

Mounting type: Surface mount
Package compatibility: SC-70 or SOT-323 footprint

Substitute parts are classified into two categories:

Direct Substitutes maintain identical electrical specifications and base resistor values (10 kOhms / 10 kOhms), with active product status and modern compliance certifications.

Similar Substitutes maintain core electrical parameters (voltage, current, transistor type) but may exhibit variations in transition frequency, power dissipation, saturation voltage, or base resistor configurations. These parts are electrically compatible within the specified parameter ranges but require design verification for frequency-dependent applications.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce Breakdown (Max) V	R1 (Base) kOhms	R2 (Emitter-Base) kOhms	hFE (Min) @ Ic, Vce	Vce Sat (Max) mV	Frequency MHz	Power (Max) mW	Package	Product Status
UNR511100L	Panasonic	100	50	10	10	35 @ 5mA, 10V	250 @ 300µA, 10mA	80	150	SC-70, SOT-323	Obsolete
SMUN2111T1G	onsemi	100	50	10	10	35 @ 5mA, 10V	250 @ 300µA, 10mA	—	230	TO-236-3, SC-59, SOT-23-3	Active
SMUN2111T3G	onsemi	100	50	10	10	35 @ 5mA, 10V	250 @ 300µA, 10mA	—	230	TO-236-3, SC-59, SOT-23-3	Active
DDTA114EUA-7-F	Diodes Incorporated	100	50	10	10	30 @ 5mA, 5V	300 @ 500µA, 10mA	250	200	SC-70, SOT-323	Active
DTA114EUA-TP	Micro Commercial Co	100	50	10	10	30 @ 5mA, 5V	300 @ 500µA, 10mA	250	200	SC-70, SOT-323	Active
MUN5111T1G	onsemi	100	50	10	10	35 @ 5mA, 10V	250 @ 300µA, 10mA	—	202	SC-70, SOT-323	Active
PDTA114EU,115	Nexperia USA Inc.	100	50	10	10	30 @ 5mA, 5V	150 @ 500µA, 10mA	180	200	SC-70, SOT-323	Active
PDTA114EU,135	Nexperia USA Inc.	100	50	10	10	30 @ 5mA, 5V	150 @ 500µA, 10mA	180	200	SC-70, SOT-323	Active
SMUN5114T3G	onsemi	100	50	10	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	—	202	SC-70, SOT-323	Active

Engineering Selection Recommendations

Direct Substitutes (Identical Electrical Specifications):

The SMUN2111T1G and SMUN2111T3G (onsemi) are direct electrical equivalents with matching base resistor values (10 kOhms / 10 kOhms) and identical DC current gain specifications. Both parts carry AEC-Q101 automotive qualification and ROHS3 compliance. The primary consideration is package compatibility: these parts are supplied in SC-59 (SOT-23-3) packaging, which differs from the original SMini3-G1 footprint. PCB layout modification is required for implementation.

The MUN5111T1G (onsemi) maintains identical electrical specifications and is supplied in SC-70 (SOT-323) packaging, which is footprint-compatible with the original UNR511100L. This part is active and ROHS3 compliant, making it the preferred direct substitute for applications requiring minimal PCB redesign.

Similar Substitutes (Compatible Electrical Parameters):

The PDTA114EU,115 and PDTA114EU,135 (Nexperia USA Inc.) are supplied in SC-70 (SOT-323) packaging with footprint compatibility. These parts maintain the 50 V voltage rating, 100 mA current rating, and 10 kOhms base resistor values. The DC current gain specification is 30 (minimum), which is lower than the original 35 specification but remains within acceptable operating margins for pre-biased transistor applications. The saturation voltage is 150 mV, which is superior to the original 250 mV specification. Both parts are active and ROHS3 compliant.

The DDTA114EUA-7-F (Diodes Incorporated) and DTA114EUA-TP (Micro Commercial Co) are supplied in SC-70 (SOT-323) packaging with footprint compatibility. These parts maintain core electrical parameters with 30 minimum DC current gain and 300 mV saturation voltage. Both are active and ROHS3 compliant.

The SMUN5114T3G (onsemi) is supplied in SC-70 (SOT-323) packaging with footprint compatibility. This part differs in emitter-base resistor value (47 kOhms versus 10 kOhms) and exhibits higher DC current gain (80 minimum). This configuration is suitable for applications requiring higher gain characteristics but requires circuit analysis to confirm compatibility with existing bias networks.

Frequently Asked Questions (FAQ)

Q: Can SMUN2111T1G or SMUN2111T3G be used as direct replacements for UNR511100L?

A: These parts are electrical equivalents with identical DC specifications and base resistor values. However, they are supplied in SC-59 (SOT-23-3) packaging, while the original part uses SMini3-G1 footprint. PCB layout modification is required. Both parts are active and carry AEC-Q101 automotive qualification.

Q: What is the primary advantage of MUN5111T1G as a substitute?

A: The MUN5111T1G maintains identical electrical specifications and is supplied in SC-70 (SOT-323) packaging, which is footprint-compatible with the original UNR511100L. This minimizes PCB redesign requirements while providing an active, ROHS3-compliant alternative.

Q: Are PDTA114EU,115 and PDTA114EU,135 suitable substitutes despite lower DC current gain?

A: Yes. Both parts maintain the 50 V voltage rating, 100 mA current rating, and 10 kOhms base resistor value. The 30 minimum DC current gain is lower than the original 35 specification but remains within acceptable operating margins for pre-biased transistor applications. The superior saturation voltage (150 mV versus 250 mV) provides additional performance margin. Both are active and ROHS3 compliant.

Q: What is the significance of the emitter-base resistor difference in SMUN5114T3G?

A: The SMUN5114T3G uses a 47 kOhms emitter-base resistor compared to 10 kOhms in the original part, resulting in higher DC current gain (80 minimum versus 35 minimum). This configuration alters the bias network behavior. Circuit analysis is required to confirm compatibility with existing designs before implementation.

Q: Are all substitute parts RoHS compliant?

A: All active substitute parts listed are ROHS3 compliant. The original UNR511100L is obsolete and does not carry modern compliance certifications.

Q: What packaging considerations apply to substitute selection?

A: The original UNR511100L uses SMini3-G1 packaging (SC-70 / SOT-323 footprint). Direct footprint-compatible substitutes include MUN5111T1G, PDTA114EU,115, PDTA114EU,135, DDTA114EUA-7-F, DTA114EUA-TP, and SMUN5114T3G. The SMUN2111T1G and SMUN2111T3G use SC-59 (SOT-23-3) packaging and require PCB layout modification.

Q: Can multiple substitute parts be used interchangeably in the same design?

A: No. While all listed parts are electrically compatible within specified parameter ranges, variations in DC current gain, saturation voltage, and resistor values require individual circuit analysis. Each substitute should be evaluated against the specific application requirements before implementation.

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