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Equivalent & Substitute Parts Reference for UMZ1N-TP
Part Overview
UMZ1N-TP is a surface-mount bipolar junction transistor array comprising 1 NPN and 1 PNP transistor, rated at 50V, 150mA, suitable for high-frequency switching interfaces. This component is supplied by Micro Commercial Co and comes in a compact 6-TSSOP, SC-88, SOT-363 configuration. With a status of “Last Time Buy,” alternative part selection is necessary for ongoing designs, volume manufacturing, or replacement in field service scenarios. Substitution demands strict adherence to the provided electrical, mechanical, and compliance parameters to maintain functional, performance, and packaging compatibility within the category: Transistors, Bipolar (BJT).
Substiute Parts
Key Parameters
| Manufacturer Part Number | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Product Status | RoHS/REACH Compliance |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| UMZ1N-TP | 1 NPN, 1 PNP | 150mA | 50V | 400mV @ 5mA, 50mA | 100nA (ICBO) | 120 @ 1mA, 6V | 150mW | 180MHz, 140MHz | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Last Time Buy | REACH Unaffected |
Substitute Part Grouping Explanation
Substitution logic for the UMZ1N-TP is strictly based on matching critical electrical and mechanical parameters—including transistor type (NPN/PNP configuration), maximum collector current, collector-emitter breakdown voltage, collector cutoff current, DC current gain, saturation voltage, maximum power dissipation, transition frequency, operating temperature, mounting type, package/case, supplier device package, and compliance certifications. Substitutes provided share compatible configurations within the same product category (BJT transistor arrays) and mounting styles.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Product Status | RoHS/REACH Compliance |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| UMZ1N-TP | Micro Commercial Co | 1 NPN, 1 PNP | 150mA | 50V | 400mV @ 5mA, 50mA | 100nA (ICBO) | 120 @ 1mA, 6V | 150mW | 180MHz, 140MHz | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Last Time Buy | REACH Unaffected |
| HN1B01FU-GR,LF | Toshiba Semiconductor and Storage | NPN, PNP | 150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 6V | 200mW, 210mW | 150MHz | 125°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | Active | ROHS3 Compliant |
| HN1B04FU-GR,LF | Toshiba Semiconductor and Storage | NPN, PNP | 150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 6V | 200mW | 150MHz | 125°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | Active | ROHS3 Compliant |
| UMZ1NT1G | onsemi | NPN, PNP | 200mA | 50V | 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA | 2µA | 200 @ 2mA, 6V | 250mW | 114MHz, 142MHz | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 | Active | ROHS3 Compliant, REACH Unaffected |
Engineering Selection Recommendations
Selection of substitute parts for UMZ1N-TP must take into account the “Last Time Buy” status of the main part and the active market availability of substitute options. All listed substitutes—HN1B01FU-GR,LF, HN1B04FU-GR,LF, and UMZ1NT1G—are compliant with ROHS3 standards; UMZ1NT1G and UMZ1N-TP are additionally REACH unaffected. Product status, compliance, and certifications should guide component choice to meet environmental and supply chain requirements as per project specifications.
Frequently Asked Questions (FAQ)
Q1: Which parameters must match to substitute UMZ1N-TP?
A1: Substitute devices must match transistor configuration (NPN/PNP), maximum collector current, collector-emitter breakdown voltage, cutoff current, DC gain, saturation voltage, maximum power, frequency, operating temperature, mounting type, and package/case. Only parts matching these criteria should be selected within the Transistors, Bipolar (BJT) category.
Q2: Are the substitute parts pin-compatible with UMZ1N-TP?
A2: All substitute parts provided are supplied in surface-mount packages such as SOT-363, SC-88, and 6-TSSOP. Pin configuration should be verified based on package equivalence and mechanical compatibility as per the listed package/case information.
Q3: What environmental compliance standards apply to substitutes?
A3: HN1B01FU-GR,LF, HN1B04FU-GR,LF, and UMZ1NT1G are ROHS3 compliant. Both UMZ1N-TP and UMZ1NT1G are REACH unaffected. Verify standards alignment in design documentation according to compliance fields provided.
Q4: Why is it necessary to find substitutes for UMZ1N-TP?
A4: The “Last Time Buy” status indicates limited future availability for UMZ1N-TP, necessitating the identification of active and compliant alternatives to ensure supply continuity in new designs and ongoing maintenance.
Q5: What package considerations affect selection?
A5: Substitute parts utilize 6-TSSOP, SC-88, SOT-363 or equivalent packages, supporting surface-mount assembly. Ensuring mechanical fit with existing layouts is essential; reference the specific supplier device package field for each alternative.
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