UMT1N-TP Equivalent & Substitute Parts

Part Overview

The UMT1N-TP is a dual PNP bipolar junction transistor array manufactured by Micro Commercial Co, designed for surface mount applications in the SOT-363 package. This active product operates across a wide temperature range of -55°C to 150°C and is compliant with RoHS3 and REACH regulations. The device is suitable for general-purpose switching and amplification circuits requiring dual PNP transistor functionality in compact form factors. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across critical parameters including collector current, breakdown voltage, saturation characteristics, and package specifications.

Substiute Parts

UMT1N-TP

Micro Commercial CoIn Stock: 3744UMT1N-TP Datasheet

Current PartRFQ

HN1A01FU-Y,LF

Toshiba Semiconductor and StorageIn Stock: 5541HN1A01FU-Y,LF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the UMT1N-TP are identified based on strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

• Transistor configuration: Dual PNP (2 PNP)
• Maximum collector current: 150mA
• Maximum collector-emitter breakdown voltage: 50V
• Collector cutoff current: 100nA (ICBO)
• Minimum DC current gain (hFE): 120 or greater
• Surface mount technology

Mechanical Compatibility Criteria:

• Package classification: 6-TSSOP, SC-88, SOT-363 family
• Tape & Reel (TR) packaging format
• Pin configuration compatibility

Regulatory & Compliance Criteria:

• RoHS3 compliance
• MSL Level 1 (Unlimited moisture sensitivity)
• Active product status

The HN1A01FU-Y,LF manufactured by Toshiba Semiconductor and Storage meets all substitution criteria for the UMT1N-TP within the defined electrical and mechanical parameter boundaries.

Parameter Comparison

Engineering Selection Recommendations

Primary Selection (UMT1N-TP): The UMT1N-TP is the specified component and remains the primary choice for applications requiring the full operating temperature range of -55°C to 150°C and transition frequency of 140MHz. This device is active, RoHS3 compliant, and maintains MSL Level 1 rating. Current inventory of 3670 pieces supports production requirements.

Substitute Selection (HN1A01FU-Y,LF): The HN1A01FU-Y,LF from Toshiba Semiconductor and Storage is a qualified substitute when the operating temperature requirement does not exceed 125°C and transition frequency requirements are 80MHz or lower. This device offers improved saturation voltage characteristics (300mV versus 500mV) and higher maximum power dissipation (200mW versus 150mW). The substitute maintains RoHS3 compliance and MSL Level 1 rating. Current inventory of 5495 pieces is available.

Substitution Applicability: Substitution is valid only when all of the following conditions are met:

• Maximum operating temperature does not exceed 125°C
• Application does not require transition frequencies above 80MHz
• Saturation voltage improvement is acceptable or beneficial to circuit design
• Package footprint compatibility with SOT-363 is confirmed in PCB layout

Both devices are active products with current manufacturing status and full regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can the HN1A01FU-Y,LF replace the UMT1N-TP in all applications?

A: No. The HN1A01FU-Y,LF is a qualified substitute only when the application operates within 125°C maximum temperature and does not require transition frequencies above 80MHz. The UMT1N-TP supports extended temperature operation to 150°C and higher frequency performance at 140MHz.

Q: What is the significance of the different Vce saturation specifications?

A: The HN1A01FU-Y,LF exhibits lower saturation voltage (300mV at 10mA, 100mA) compared to the UMT1N-TP (500mV at 5mA, 50mA). Lower saturation voltage reduces power dissipation in switching applications and improves efficiency. This is a performance advantage in circuits where saturation voltage is a limiting factor.

Q: Are the packages physically identical?

A: Both devices use the 6-TSSOP, SC-88, SOT-363 package family with surface mount technology. Pin configuration and footprint are compatible. Verification of PCB layout compatibility is required before substitution.

Q: Do both parts meet the same regulatory requirements?

A: Yes. Both the UMT1N-TP and HN1A01FU-Y,LF are RoHS3 compliant, maintain MSL Level 1 (Unlimited) moisture sensitivity rating, and are classified as active products with current manufacturing status.

Q: What is the difference in DC current gain specifications?

A: Both devices specify a minimum DC current gain (hFE) of 120. The UMT1N-TP measures this at 1mA collector current and 6V Vce, while the HN1A01FU-Y,LF measures at 2mA collector current and 6V Vce. Both meet the minimum 120 specification and are functionally equivalent for gain performance.

Q: Can the higher power rating of the HN1A01FU-Y,LF (200mW vs 150mW) be used to exceed the UMT1N-TP design limits?

A: No. The higher power rating of the HN1A01FU-Y,LF is an additional capability but does not permit operation beyond the electrical and thermal limits of the original UMT1N-TP design. Circuit design must remain within the UMT1N-TP specifications unless the design is formally revised and re-qualified.

Q: What inventory considerations apply to substitution?

A: The UMT1N-TP has 3670 pieces in stock, while the HN1A01FU-Y,LF has 5495 pieces available. Substitution may be considered when primary part inventory is depleted and application parameters permit use of the substitute device.