UMH4NTN Pre-Biased Dual NPN Transistor Equivalent & Substitute Parts

Part Overview

The UMH4NTN is a pre-biased dual NPN transistor manufactured by Rohm Semiconductor in a 6-TSSOP (UMT6) surface mount package. This component is classified as a 2 NPN - Pre-Biased (Dual) device rated for 50V collector-emitter breakdown voltage, 100mA maximum collector current, and 150mW power dissipation. The part is Active status and ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative sourcing is required for supply chain optimization, or when design flexibility permits selection from multiple qualified manufacturers. Substitute parts must maintain electrical compatibility across critical parameters including transistor configuration, voltage ratings, current ratings, base resistor values, and saturation characteristics.

Key Parameters

Parameter	Value	Unit	Specification Basis
Transistor Type	2 NPN - Pre-Biased (Dual)	Configuration	Functional requirement
Voltage - Collector Emitter Breakdown (Max)	50	V	Electrical rating
Current - Collector (Ic) (Max)	100	mA	Electrical rating
Resistor - Base (R1)	10	kOhms	Internal biasing network
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V	Dimensionless	Amplification characteristic
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA	V	Switching performance
Power - Max	150	mW	Thermal rating
Frequency - Transition	250	MHz	High-frequency performance
Package / Case	6-TSSOP, SC-88, SOT-363	Form factor	Mechanical compatibility
Mounting Type	Surface Mount	Assembly method	PCB integration
RoHS Status	ROHS3 Compliant	Compliance	Environmental regulation
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Classification	Storage requirement

Substitute Part Grouping Explanation

Substitution logic for the UMH4NTN is based on strict electrical and mechanical parameter matching within the pre-biased dual transistor category. The following criteria determine substitutability:

Primary Substitution Criteria:

Transistor configuration must be 2 NPN - Pre-Biased (Dual)
Voltage rating (Vce breakdown) must be ≥50V
Maximum collector current must be ≥100mA
Base resistor (R1) must be 10kOhms
Package must be compatible with 6-TSSOP, SC-88, or SOT-363 footprints
Power rating must be ≥150mW
Transition frequency must be ≥250MHz (where specified)
RoHS3 compliance and MSL 1 required

Direct Equivalents maintain all electrical parameters within specified tolerances and are pin-for-pin compatible.

Upgrade Substitutes provide enhanced performance characteristics (higher power dissipation, improved saturation voltage, or lower cutoff current) while maintaining backward compatibility with the original design.

Similar Alternatives differ in transistor configuration (such as 1 NPN + 1 PNP instead of 2 NPN) or have minor parameter variations but remain functionally compatible in many applications.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Vce (Max) V	Ic (Max) mA	R1 (kOhms)	hFE (Min) @ Ic, Vce	Vce Sat (Max) @ Ib, Ic	Power (Max) mW	Freq (MHz)	Package
UMH4NTN	Rohm Semiconductor	2 NPN	50	100	10	100 @ 1mA, 5V	300mV @ 1mA, 10mA	150	250	UMT6
DDC114TU-7-F	Diodes Incorporated	2 NPN	50	100	10	100 @ 1mA, 5V	300mV @ 100µA, 1mA	200	250	SOT-363
PUMH11,115	Nexperia USA Inc.	2 NPN	50	100	10	30 @ 5mA, 5V	150mV @ 500µA, 10mA	300	—	6-TSSOP
PUMH9,115	Nexperia USA Inc.	2 NPN	50	100	10	100 @ 5mA, 5V	100mV @ 250µA, 5mA	300	—	6-TSSOP
PUMH9,125	Nexperia USA Inc.	2 NPN	50	100	10	100 @ 5mA, 5V	100mV @ 250µA, 5mA	300	—	6-TSSOP
PUMH9,135	Nexperia USA Inc.	2 NPN	50	100	10	100 @ 5mA, 5V	100mV @ 250µA, 5mA	300	—	6-TSSOP
PUMH9,165	Nexperia USA Inc.	2 NPN	50	100	10	100 @ 5mA, 5V	100mV @ 250µA, 5mA	300	—	6-TSSOP
DCX114TU-7-F	Diodes Incorporated	1 NPN, 1 PNP	50	100	10	100 @ 1mA, 5V	300mV @ 100µA, 1mA	200	250	SOT-363
MUN5215DW1T1G	onsemi	2 NPN	50	100	10	160 @ 5mA, 10V	250mV @ 1mA, 10mA	250	—	SC-88/SOT-363
NSVMUN5215DW1T1G	onsemi	2 NPN	50	100	10	160 @ 5mA, 10V	250mV @ 1mA, 10mA	250	—	SC-88/SOT-363
PUMD4,115	Nexperia USA Inc.	1 NPN, 1 PNP	50	100	10	200 @ 1mA, 5V	150mV @ 500µA, 10mA	300	—	6-TSSOP

Engineering Selection Recommendations

Direct Equivalent Selection:

DDC114TU-7-F (Diodes Incorporated) is the primary direct equivalent to UMH4NTN. Both parts maintain identical transistor configuration (2 NPN - Pre-Biased), voltage rating (50V), current rating (100mA), and base resistor value (10kOhms). DDC114TU-7-F provides enhanced power dissipation (200mW vs. 150mW) and maintains 250MHz transition frequency. Both parts are ROHS3 compliant with MSL 1 rating. Package compatibility is confirmed across SOT-363 footprint standards.

Upgrade Substitute Selection:

PUMH9,115, PUMH9,125, PUMH9,135, and PUMH9,165 (Nexperia USA Inc.) are upgrade substitutes offering superior performance characteristics. These parts maintain the 2 NPN configuration, 50V/100mA ratings, and 10kOhms base resistor. Enhanced specifications include 300mW power dissipation (double the original), improved saturation voltage (100mV vs. 300mV), and lower cutoff current (1µA vs. 500nA). All variants are ROHS3 compliant with MSL 1. The 6-TSSOP package is mechanically compatible with the original UMT6 footprint. Selection among PUMH9 variants depends on emitter-base resistor requirements: PUMH11,115 includes 10kOhms R2; PUMH9 series includes 47kOhms R2.

Similar Alternative Selection:

DCX114TU-7-F (Diodes Incorporated), PUMD4,115 (Nexperia USA Inc.), MUN5215DW1T1G, and NSVMUN5215DW1T1G (onsemi) are similar alternatives with modified transistor configurations. DCX114TU-7-F and PUMD4,115 contain 1 NPN + 1 PNP configuration instead of dual NPN. These parts maintain 50V/100mA ratings and 10kOhms base resistor but are suitable only for applications where the complementary PNP transistor provides functional benefit. MUN5215DW1T1G and NSVMUN5215DW1T1G maintain 2 NPN configuration with enhanced current gain (160 @ 5mA, 10V) and improved saturation characteristics (250mV). All similar alternatives are ROHS3 compliant with MSL 1.

Compliance Verification:

All listed substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity level, ensuring regulatory and storage compatibility with the original UMH4NTN specification.

Frequently Asked Questions (FAQ)

Q1: Can DDC114TU-7-F directly replace UMH4NTN without circuit modification?

A: Yes. DDC114TU-7-F is a direct equivalent maintaining identical transistor configuration (2 NPN - Pre-Biased), voltage rating (50V), current rating (100mA), base resistor value (10kOhms), and DC current gain (100 @ 1mA, 5V). The SOT-363 package is footprint-compatible with the UMT6 package. No circuit modification is required.

Q2: What is the primary difference between UMH4NTN and PUMH9,135?

A: PUMH9,135 is an upgrade substitute offering enhanced performance. Key differences include power dissipation (300mW vs. 150mW), saturation voltage (100mV vs. 300mV @ different test conditions), and cutoff current (1µA vs. 500nA). PUMH9,135 includes a 47kOhms emitter-base resistor (R2) compared to the original's unspecified R2. Both maintain 50V/100mA ratings and 10kOhms base resistor. The 6-TSSOP package is mechanically compatible.

Q3: Why would I select a similar alternative like DCX114TU-7-F instead of a direct equivalent?

A: DCX114TU-7-F contains 1 NPN + 1 PNP configuration instead of dual NPN. Selection of this similar alternative is appropriate only when circuit design requires both NPN and PNP transistors in a single package. For applications requiring dual NPN functionality, direct equivalents or upgrade substitutes are the correct choice.

Q4: Are all substitute parts suitable for high-frequency applications?

A: Transition frequency specifications vary among substitutes. UMH4NTN and DDC114TU-7-F both specify 250MHz transition frequency, suitable for high-frequency switching applications. Nexperia PUMH series and onsemi MUN5215 series do not specify transition frequency in the provided data. For applications requiring confirmed 250MHz or higher performance, DDC114TU-7-F is the recommended substitute.

Q5: What packaging considerations apply when substituting UMH4NTN?

A: UMH4NTN uses UMT6 package (6-TSSOP variant). Direct equivalents and upgrade substitutes use 6-TSSOP or SOT-363 packages, which share identical 6-pin footprints and are mechanically interchangeable on PCB layouts. Similar alternatives using SOT-363 designation are also footprint-compatible. Verify PCB design files confirm 6-TSSOP/SOT-363 pad compatibility before component substitution.

Q6: Do all substitute parts meet the same compliance requirements as UMH4NTN?

A: Yes. All listed substitute parts are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity level rating, matching the original UMH4NTN specification. Compliance documentation is available from respective manufacturers.

Q7: Which substitute offers the best saturation performance for switching applications?

A: PUMH9,115, PUMH9,125, PUMH9,135, and PUMH9,165 offer the lowest saturation voltage (100mV @ 250µA, 5mA) compared to UMH4NTN (300mV @ 1mA, 10mA). This improved saturation characteristic reduces power dissipation in switching applications. PUMD4,115 also provides low saturation voltage (150mV @ 500µA, 10mA). Selection depends on specific circuit current and voltage requirements.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message