UMD2NFHATR Equivalent & Substitute Parts

Part Overview

The UMD2NFHATR is a pre-biased dual bipolar transistor (BJT) manufactured by Rohm Semiconductor, combining one NPN and one PNP transistor in a single surface mount package. This component is classified as an active product and is designed for general-purpose switching and amplification applications in automotive-grade environments. The part is AEC-Q101 qualified and RoHS3 compliant.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required for design flexibility, or when different base resistor configurations better suit specific circuit requirements. Substitute parts must maintain electrical compatibility across critical parameters including collector current, breakdown voltage, saturation characteristics, and frequency response.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	22	kOhms
Resistor - Emitter Base (R2)	22	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 5mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300 @ 500µA, 10mA	mV
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	250	MHz
Power - Max	150	mW
Package / Case	6-TSSOP, SC-88, SOT-363	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—
Grade	Automotive	—
Qualification	AEC-Q101	—

Substitute Part Grouping Explanation

Substitution of the UMD2NFHATR is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Transistor configuration (1 NPN + 1 PNP dual vs. 2 NPN dual)
Maximum collector current: 100 mA
Collector-emitter breakdown voltage: 50 V
Base resistor values: R1 = 22 kOhms, R2 = 22 kOhms
DC current gain (hFE) minimum specification
Saturation voltage characteristics
Transition frequency: 250 MHz or higher
Power dissipation rating: minimum 150 mW
Surface mount package compatibility (6-TSSOP, SC-88, SOT-363)
RoHS3 compliance and MSL Level 1

Substitution Categories:

Category A - Direct Equivalents (1 NPN + 1 PNP Configuration): Parts that maintain identical transistor configuration with matching base resistor values and electrical specifications. These parts are fully interchangeable in applications requiring the specific NPN/PNP dual configuration.

Category B - Functional Alternatives (2 NPN Configuration): Parts with dual NPN transistor configuration instead of mixed NPN/PNP. These parts are suitable for applications where only NPN transistors are required and the circuit topology permits substitution. Power dissipation and frequency response must meet or exceed the main part specifications.

Category C - Enhanced Performance Variants: Parts with identical transistor configuration but higher power ratings or improved saturation characteristics. These parts provide additional design margin and are suitable for applications with higher thermal or switching requirements.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) mA	Vce(br) V	R1 kOhms	R2 kOhms	hFE (Min)	Vce Sat (Max) mV	Freq MHz	Power mW	Package
UMD2NFHATR	Rohm Semiconductor	1 NPN, 1 PNP	100	50	22	22	56	300	250	150	UMT6
DCX124EU-7-F	Diodes Incorporated	1 NPN, 1 PNP	100	50	22	22	56	300	250	200	SOT-363
PUMD16,115	Nexperia USA Inc.	1 NPN, 1 PNP	100	50	22	47	80	150	—	300	6-TSSOP
PUMD2,115	Nexperia USA Inc.	1 NPN, 1 PNP	100	50	22	22	60	150	—	300	6-TSSOP
PUMD2,165	Nexperia USA Inc.	1 NPN, 1 PNP	100	50	22	22	60	150	—	300	6-TSSOP
DDC124EU-7-F	Diodes Incorporated	2 NPN	100	50	22	22	56	300	250	200	SOT-363
NSVMUN5212DW1T1G	onsemi	2 NPN	100	50	22	22	60	250	—	250	SC-88/SC70-6/SOT-363
PUMH1,115	Nexperia USA Inc.	2 NPN	100	50	22	22	60	150	230	300	6-TSSOP
RN1903,LF(CT	Toshiba Semiconductor and Storage	2 NPN	100	50	22	22	70	300	250	200	US6

Engineering Selection Recommendations

For Direct Substitution (Identical Configuration):

The DCX124EU-7-F (Diodes Incorporated) is the primary equivalent for the UMD2NFHATR. Both parts maintain the 1 NPN + 1 PNP configuration with identical base resistor values (22 kOhms each), matching electrical specifications, and equivalent performance characteristics. The DCX124EU-7-F provides 200 mW power dissipation compared to the UMD2NFHATR's 150 mW, offering additional thermal margin. Both parts are RoHS3 compliant and MSL Level 1.

The PUMD2,115 and PUMD2,165 (Nexperia USA Inc.) are functionally equivalent alternatives with the same 1 NPN + 1 PNP configuration and identical base resistor values. These parts offer 300 mW power dissipation and improved saturation voltage (150 mV vs. 300 mV), providing enhanced performance characteristics. PUMD2,115 is available in Cut Tape & Digi-Reel packaging, while PUMD2,165 is supplied in Tape & Reel format.

The PUMD16,115 (Nexperia USA Inc.) maintains the 1 NPN + 1 PNP configuration but features a different emitter-base resistor value (47 kOhms vs. 22 kOhms) and higher DC current gain (80 vs. 56). This part is automotive-grade with AEC-Q100 qualification and provides 300 mW power dissipation. Selection of this part requires circuit analysis to confirm compatibility with the modified base resistor network.

For Dual NPN Configuration (Functional Alternatives):

The DDC124EU-7-F, NSVMUN5212DW1T1G, PUMH1,115, and RN1903,LF(CT are dual NPN pre-biased transistor alternatives. These parts are suitable for applications where the circuit topology requires only NPN transistors. All maintain the 100 mA collector current, 50 V breakdown voltage, and 22 kOhms base resistor specifications. Selection from this category requires confirmation that the application does not depend on the PNP transistor element.

Compliance and Qualification:

All substitute parts maintain RoHS3 compliance and MSL Level 1 moisture sensitivity rating. The PUMD16,115 carries automotive-grade designation with AEC-Q100 qualification. The UMD2NFHATR and DCX124EU-7-F both carry automotive-grade designation with AEC-Q101 qualification. For automotive applications requiring AEC-Q101 qualification, the DCX124EU-7-F is the recommended substitute.

Frequently Asked Questions (FAQ)

Q: Can the UMD2NFHATR be replaced with a dual NPN part like the DDC124EU-7-F?

A: Substitution with a dual NPN part is possible only if the circuit design does not require the PNP transistor element. The electrical specifications for collector current, breakdown voltage, and base resistor values are compatible. However, circuit topology analysis is required to confirm functional equivalence. If the application specifically requires both NPN and PNP transistors, dual NPN alternatives are not suitable.

Q: What is the difference between the PUMD2,115 and PUMD16,115?

A: Both parts are 1 NPN + 1 PNP pre-biased transistors from Nexperia USA Inc. The primary difference is the emitter-base resistor value: PUMD2,115 has R2 = 22 kOhms (matching the UMD2NFHATR), while PUMD16,115 has R2 = 47 kOhms. The PUMD16,115 also exhibits higher DC current gain (80 vs. 60). These differences affect switching speed and base drive requirements. Selection depends on circuit requirements for base resistor network and gain characteristics.

Q: Are the package differences between UMT6, SOT-363, and 6-TSSOP significant for substitution?

A: All three package designations (UMT6, SOT-363, 6-TSSOP) refer to equivalent surface mount packages with identical pin configurations and mechanical dimensions. The UMT6 is Rohm's designation for the same package as SOT-363 and 6-TSSOP. Substitution between these packages is mechanically and electrically compatible. Verify PCB footprint compatibility with the specific package variant selected.

Q: What is the significance of the 250 MHz transition frequency specification?

A: The 250 MHz transition frequency indicates the maximum frequency at which the transistor can operate effectively as an amplifier. For switching applications, this specification ensures adequate switching speed for digital logic circuits. Substitute parts with equal or higher transition frequency (or unspecified frequency with equivalent switching characteristics) maintain performance compatibility. Parts with lower transition frequency may exhibit reduced switching speed.

Q: Can the UMD2NFHATR be substituted with the PUMD16,115 in automotive applications?

A: The PUMD16,115 is automotive-grade with AEC-Q100 qualification, while the UMD2NFHATR carries AEC-Q101 qualification. Both meet automotive standards but under different qualification levels. The PUMD16,115 is electrically compatible with identical collector current, breakdown voltage, and power dissipation specifications. However, the different emitter-base resistor value (47 kOhms vs. 22 kOhms) requires circuit analysis to confirm functional equivalence. For applications with strict AEC-Q101 requirements, the DCX124EU-7-F is the preferred substitute.

Q: What does MSL Level 1 (Unlimited) mean for moisture sensitivity?

A: MSL Level 1 indicates the lowest moisture sensitivity classification, meaning the component can be stored indefinitely without moisture bake-out requirements prior to soldering. This classification applies to all listed substitute parts and the main part, ensuring equivalent handling and storage procedures.

Q: Are there packaging format differences between the substitute parts?

A: Yes. The UMD2NFHATR is supplied in Tape & Reel (TR) format with UMT6 package designation. Substitute parts are available in multiple packaging formats: Diodes Incorporated parts (DCX124EU-7-F, DDC124EU-7-F) are supplied in Tape & Reel with SOT-363 package. Nexperia parts (PUMD2,115, PUMD2,165, PUMD16,115, PUMH1,115) are available in both Cut Tape & Digi-Reel and Tape & Reel formats with 6-TSSOP package. The onsemi part (NSVMUN5212DW1T1G) is supplied in Tape & Reel with SC-88/SC70-6/SOT-363 package. Verify packaging format availability for your procurement requirements.

Q: What is the practical difference in saturation voltage between the UMD2NFHATR (300 mV) and PUMD2,115 (150 mV)?

A: Saturation voltage represents the minimum voltage drop across the transistor when fully conducting. The PUMD2,115's lower saturation voltage (150 mV vs. 300 mV) results in reduced power dissipation during saturation and improved switching efficiency. This characteristic makes the PUMD2,115 suitable for applications where minimizing power loss is critical. Both values are within acceptable ranges for standard switching applications.

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