UMB3NTN Equivalent & Substitute Parts

Part Overview

The UMB3NTN is a pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Rohm Semiconductor in a 6-TSSOP (UMT6) surface mount package. This component integrates two PNP transistors with internal biasing resistors, designed for switching and amplification applications requiring 50V collector-emitter breakdown voltage and 100mA maximum collector current. The part is active and in production with 75,300 units currently in stock.

Equivalent and substitute parts are identified when design requirements permit variation in internal biasing resistor values, saturation voltage characteristics, or power dissipation ratings while maintaining core electrical specifications including voltage rating, current capacity, and package compatibility.

Substiute Parts

UMB3NTN
Rohm SemiconductorIn Stock: 75326UMB3NTN Datasheet
UMB3NTN
Current Part
DDA143TU-7-F
Diodes IncorporatedIn Stock: 38494DDA143TU-7-F Datasheet
DDA143TU-7-F
Direct
PUMB15,115
Nexperia USA Inc.In Stock: 3706PUMB15,115 Datasheet
PUMB15,115
Upgrade
PUMB3,115
Nexperia USA Inc.In Stock: 3249PUMB3,115 Datasheet
PUMB3,115
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PUMB1,115
Nexperia USA Inc.In Stock: 6927PUMB1,115 Datasheet
PUMB1,115
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PUMB1,135
Nexperia USA Inc.In Stock: 10568PUMB1,135 Datasheet
PUMB1,135
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PUMB14,115
NXP USA Inc.In Stock: 84782PUMB14,115 Datasheet
PUMB14,115
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PUMB16,115
NXP USA Inc.In Stock: 113382PUMB16,115 Datasheet
PUMB16,115
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PUMB9,115
NXP SemiconductorsIn Stock: 22459PUMB9,115 Datasheet
PUMB9,115
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Key Parameters

Parameter UMB3NTN Unit
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2)
DC Current Gain (hFE) Min @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Frequency - Transition 250 MHz
Power - Max 150 mW
Package / Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the UMB3NTN is determined by the following core electrical and mechanical parameters:

Critical Parameters (Must Match or Exceed):

  • Transistor configuration: 2 PNP - Pre-Biased (Dual)
  • Maximum collector current: 100mA
  • Collector-emitter breakdown voltage: 50V
  • Package type: 6-TSSOP, SC-88, or SOT-363 (surface mount)
  • Mounting type: Surface Mount

Variable Parameters (Substitution Permitted):

  • Base resistor value (R1): 4.7kOhms to 47kOhms
  • Emitter-base resistor (R2): Present or absent
  • DC current gain (hFE): 30 to 200 @ specified test conditions
  • Vce saturation voltage: 100mV to 300mV @ specified test conditions
  • Maximum power dissipation: 150mW to 300mW
  • Transition frequency: 250MHz or unspecified
  • Current-collector cutoff: 500nA to 1µA

Substitutes are grouped into three categories: direct equivalents (matching R1 value and saturation characteristics), similar parts (alternative R1 and R2 configurations), and upgraded variants (enhanced power ratings and automotive qualification).

Parameter Comparison

Part Number Manufacturer Ic Max (mA) Vce Breakdown (V) R1 (kOhms) R2 (kOhms) hFE Min @ Test Vce Sat Max (mV) Power Max (mW) Package Automotive Grade
UMB3NTN Rohm Semiconductor 100 50 4.7 100 @ 1mA, 5V 300 @ 250µA, 5mA 150 UMT6 No
DDA143TU-7-F Diodes Incorporated 100 50 4.7 100 @ 1mA, 5V 300 @ 250µA, 2.5mA 200 SOT-363 No
PUMB15,115 Nexperia USA Inc. 100 50 4.7 4.7 30 @ 10mA, 5V 150 @ 500µA, 10mA 300 6-TSSOP Yes (AEC-Q100)
PUMB3,115 Nexperia USA Inc. 100 50 4.7 200 @ 1mA, 5V 100 @ 250µA, 5mA 300 6-TSSOP Yes (AEC-Q100)
PUMB1,115 Nexperia USA Inc. 100 50 22 22 60 @ 5mA, 5V 150 @ 500µA, 10mA 300 6-TSSOP Yes (AEC-Q100)
PUMB1,135 Nexperia USA Inc. 100 50 22 22 60 @ 5mA, 5V 150 @ 500µA, 10mA 300 6-TSSOP Yes (AEC-Q100)
PUMB14,115 NXP USA Inc. 100 50 47 100 @ 1mA, 5V 150 @ 500µA, 10mA 300 SOT-363 No
PUMB16,115 NXP USA Inc. 100 50 22 47 80 @ 5mA, 5V 150 @ 500µA, 10mA 300 SOT-363 No
PUMB9,115 NXP Semiconductors 100 50 10 47 100 @ 5mA, 5V 100 @ 250µA, 5mA 300 6-TSSOP Yes (AEC-Q100)

Engineering Selection Recommendations

Direct Equivalent (Highest Compatibility):

DDA143TU-7-F (Diodes Incorporated) provides direct electrical equivalence with matching R1 value (4.7kOhms), identical hFE specification (100 @ 1mA, 5V), and equivalent saturation characteristics. This part is suitable for direct substitution in non-automotive applications. The SOT-363 package is mechanically compatible with the UMB3NTN's 6-TSSOP footprint. Enhanced power rating (200mW vs. 150mW) provides additional thermal margin.

Automotive-Grade Alternatives:

PUMB3,115 (Nexperia USA Inc.) and PUMB9,115 (NXP Semiconductors) are AEC-Q100 qualified automotive-grade substitutes. PUMB3,115 matches the UMB3NTN's R1 value (4.7kOhms) and test conditions while offering superior saturation performance (100mV vs. 300mV) and doubled power rating (300mW). PUMB9,115 provides alternative biasing (R1 10kOhms, R2 47kOhms) with equivalent saturation voltage (100mV) and automotive qualification.

Higher Base Resistance Options:

PUMB14,115 (47kOhms R1) and PUMB1,115/PUMB1,135 (22kOhms R1 and R2) are suitable when circuit design permits higher base resistance values. These parts maintain 100mA collector current and 50V breakdown voltage with improved power dissipation (300mW). PUMB1 variants include symmetric biasing resistors (22kOhms/22kOhms) for applications requiring balanced base-emitter networks.

Selection Criteria:

  • Non-automotive applications with standard thermal requirements: DDA143TU-7-F
  • Automotive or high-reliability applications: PUMB3,115, PUMB9,115, or PUMB15,115
  • Applications requiring lower saturation voltage: PUMB3,115 or PUMB9,115
  • Applications permitting higher base resistance: PUMB1,115, PUMB1,135, PUMB14,115, or PUMB16,115

All substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating.

Frequently Asked Questions (FAQ)

Q: Can DDA143TU-7-F replace UMB3NTN in all applications?

A: DDA143TU-7-F is electrically equivalent with matching R1 (4.7kOhms) and hFE specifications. The SOT-363 package is mechanically compatible with UMT6 footprints. Substitution is valid for non-automotive applications. Verify PCB layout compatibility before implementation.

Q: What is the difference between PUMB3,115 and UMB3NTN?

A: PUMB3,115 is an automotive-grade (AEC-Q100) variant with superior saturation performance (100mV vs. 300mV @ specified test conditions), doubled power rating (300mW vs. 150mW), and higher DC current gain (200 @ 1mA, 5V vs. 100 @ 1mA, 5V). Both share identical R1 value (4.7kOhms) and voltage/current ratings. PUMB3,115 is suitable for automotive and high-reliability applications.

Q: Why do some substitutes have different R1 and R2 values?

A: Internal biasing resistor values determine the transistor's switching speed, input impedance, and bias current characteristics. Alternative R1/R2 combinations (such as PUMB1,115 with 22kOhms/22kOhms or PUMB9,115 with 10kOhms/47kOhms) are suitable when circuit design accommodates different bias networks. Selection depends on application-specific input impedance and switching requirements.

Q: Are PUMB14,115 and PUMB16,115 suitable replacements?

A: PUMB14,115 (47kOhms R1) and PUMB16,115 (22kOhms R1, 47kOhms R2) maintain core electrical specifications (100mA, 50V, 300mW) but employ higher base resistance values. These parts are suitable when circuit design permits increased input impedance. Verify bias network compatibility before substitution.

Q: What is the significance of AEC-Q100 qualification?

A: AEC-Q100 qualification indicates the part meets automotive industry reliability and quality standards. PUMB3,115, PUMB1,115, PUMB1,135, PUMB15,115, and PUMB9,115 are AEC-Q100 qualified. These parts are required for automotive applications and high-reliability systems. Non-qualified parts (UMB3NTN, DDA143TU-7-F, PUMB14,115, PUMB16,115) are suitable for consumer and industrial applications.

Q: Can UMB3NTN be used in place of PUMB3,115?

A: UMB3NTN is not a direct substitute for PUMB3,115 in automotive applications due to lack of AEC-Q100 qualification. However, electrical compatibility exists for non-automotive use. PUMB3,115 offers superior performance (lower saturation voltage, higher power rating) and is the preferred choice for automotive and high-reliability designs.

Q: What package compatibility exists between UMT6 and SOT-363?

A: UMT6 and SOT-363 are equivalent 6-pin surface mount packages with identical pin configurations and footprints. Parts specified in either package designation are mechanically interchangeable on standard PCB layouts. Verify component placement and thermal management requirements for applications with power dissipation exceeding 200mW.

Q: How does transition frequency affect substitution?

A: UMB3NTN specifies 250MHz transition frequency. Substitute parts with unspecified transition frequency (PUMB series) are suitable for applications not requiring explicit frequency specification. For high-frequency switching applications, verify transition frequency specifications with the component datasheet before substitution.

Q: Are all substitutes ROHS3 compliant?

A: All listed substitute parts are ROHS3 compliant. REACH status is unaffected for all parts. Moisture sensitivity level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling requirements during storage or assembly.

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