UG3003-T Equivalent & Substitute Parts

Part Overview

The UG3003-T is a general-purpose rectifier diode manufactured by Diodes Incorporated, rated for 200 V DC reverse voltage and 3 A average rectified current in a DO-201AD axial through-hole package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and maintenance applications. The UG3003-T features fast recovery characteristics with a reverse recovery time of 50 ns, suitable for applications requiring rapid switching performance in rectification circuits.

Substiute Parts

UG3003-T
Diodes IncorporatedIn Stock: 795UG3003-T Datasheet
UG3003-T
Current Part
1N5187
Microchip TechnologyIn Stock: 8841N5187 Datasheet
1N5187
MFR Recommended
1N5402-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 16551N5402-E3/54 Datasheet
1N5402-E3/54
MFR Recommended
1N5402-G
Comchip TechnologyIn Stock: 9981N5402-G Datasheet
1N5402-G
MFR Recommended
1N5402G
Taiwan Semiconductor CorporationIn Stock: 21461N5402G Datasheet
1N5402G
MFR Recommended
1N5402RLG
onsemiIn Stock: 37191N5402RLG Datasheet
1N5402RLG
MFR Recommended
1N5417
Microchip TechnologyIn Stock: 11751N5417 Datasheet
1N5417
MFR Recommended
1N5624-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 153461N5624-TR Datasheet
1N5624-TR
MFR Recommended
BY251P-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 6175BY251P-E3/54 Datasheet
BY251P-E3/54
MFR Recommended
GI502-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1105GI502-E3/54 Datasheet
GI502-E3/54
MFR Recommended
GP30D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 830GP30D-E3/54 Datasheet
GP30D-E3/54
MFR Recommended
GP30D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 816GP30D-E3/73 Datasheet
GP30D-E3/73
MFR Recommended
HER303G-AP
Micro Commercial CoIn Stock: 727HER303G-AP Datasheet
HER303G-AP
MFR Recommended
HER303GA-G
Comchip TechnologyIn Stock: 780HER303GA-G Datasheet
HER303GA-G
MFR Recommended
HER303GT-G
Comchip TechnologyIn Stock: 1183HER303GT-G Datasheet
HER303GT-G
MFR Recommended
HER503GP-TP
Micro Commercial CoIn Stock: 5795HER503GP-TP Datasheet
HER503GP-TP
MFR Recommended
P300D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 6644P300D-E3/54 Datasheet
P300D-E3/54
MFR Recommended
RGP30D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1308RGP30D-E3/54 Datasheet
RGP30D-E3/54
MFR Recommended
RGP30D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 4840RGP30D-E3/73 Datasheet
RGP30D-E3/73
MFR Recommended
SF34G-AP
Micro Commercial CoIn Stock: 1149SF34G-AP Datasheet
SF34G-AP
MFR Recommended
SF34G-BP
Micro Commercial CoIn Stock: 1045SF34G-BP Datasheet
SF34G-BP
MFR Recommended
UF3003-G
Comchip TechnologyIn Stock: 1105UF3003-G Datasheet
UF3003-G
MFR Recommended
UF3003-HF
Comchip TechnologyIn Stock: 933UF3003-HF Datasheet
UF3003-HF
MFR Recommended
UF5402-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 2959UF5402-E3/54 Datasheet
UF5402-E3/54
MFR Recommended
UF5402-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 4168UF5402-E3/73 Datasheet
UF5402-E3/73
MFR Recommended
EGP30D
onsemiIn Stock: 25502EGP30D Datasheet
EGP30D
Parametric Equivalent
SF34G-TP
Micro Commercial CoIn Stock: 1111SF34G-TP Datasheet
SF34G-TP
Parametric Equivalent

Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 3 A
Speed Classification Fast Recovery ≤ 500 ns, > 200 mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Mounting Type Through Hole
Package / Case DO-201AD, Axial
Operating Temperature - Junction -65°C ~ 150°C
Product Status Obsolete
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the UG3003-T is determined by the following critical parameters:

Mandatory Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3 A
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD or equivalent axial package

Acceptable Variation Parameters:

  • Voltage - Forward (Vf): Substitute parts may have different forward voltage characteristics, provided they do not exceed application circuit requirements
  • Reverse Recovery Time (trr): Substitute parts may have different recovery speeds; fast recovery parts (≤ 500 ns) are interchangeable with standard recovery parts (> 500 ns) in most applications
  • Operating Temperature Range: Substitute parts may have different junction temperature limits; the application operating range must fall within the substitute part's rated range
  • RoHS and REACH Compliance: Substitute parts may have different compliance statuses; selection depends on end-product regulatory requirements

Substitute parts are grouped into two categories: Fast Recovery Diodes (trr ≤ 500 ns) and Standard Recovery Diodes (trr > 500 ns). Fast recovery parts provide superior switching performance but are not required for all applications. Standard recovery parts are suitable for general rectification where switching speed is not critical.

Parameter Comparison

Part Number Manufacturer Vr (Max) Io Vf (Max) @ If Speed trr Package Temp Range Product Status RoHS
UG3003-T Diodes Incorporated 200 V 3 A 950 mV @ 3 A Fast Recovery ≤ 500 ns 50 ns DO-201AD -65°C ~ 150°C Obsolete ROHS3
1N5187 Microchip Technology 200 V 3 A 1.5 V @ 9 A Fast Recovery ≤ 500 ns 200 ns B, Axial -65°C ~ 175°C Active Non-compliant
1N5402-E3/54 Vishay General Semiconductor 200 V 3 A 1.2 V @ 3 A Standard Recovery > 500 ns Not specified DO-201AD -50°C ~ 150°C Active ROHS3
1N5402-G Comchip Technology 200 V 3 A 1 V @ 3 A Standard Recovery > 500 ns Not specified DO-201AD -65°C ~ 125°C Active ROHS3
1N5402G Taiwan Semiconductor Corporation 200 V 3 A 1 V @ 3 A Standard Recovery > 500 ns Not specified DO-201AD -55°C ~ 150°C Active ROHS3
1N5402RLG onsemi 200 V 3 A 1 V @ 3 A Standard Recovery > 500 ns Not specified DO-201AA, DO-27, Axial -65°C ~ 150°C Not For New Designs ROHS3
1N5417 Microchip Technology 200 V 3 A 1.5 V @ 9 A Fast Recovery ≤ 500 ns 150 ns Axial -65°C ~ 175°C Active Non-compliant
1N5624-TR Vishay General Semiconductor 200 V 3 A 1 V @ 3 A Standard Recovery > 500 ns 7.5 µs SOD-64, Axial -55°C ~ 175°C Active ROHS3
BY251P-E3/54 Vishay General Semiconductor 200 V 3 A 1.1 V @ 3 A Standard Recovery > 500 ns 3 µs DO-201AD -55°C ~ 150°C Active ROHS3
GI502-E3/54 Vishay General Semiconductor 200 V 3 A 1.1 V @ 9.4 A Standard Recovery > 500 ns 2 µs DO-201AD -50°C ~ 150°C Active ROHS3
GP30D-E3/54 Vishay General Semiconductor 200 V 3 A 1.1 V @ 3 A Standard Recovery > 500 ns 5 µs DO-201AD -65°C ~ 175°C Active ROHS3

Engineering Selection Recommendations

For Active Production (Recommended Primary Choices):

  1. 1N5402G (Taiwan Semiconductor Corporation) - Highest inventory availability (2110 pcs), ROHS3 compliant, standard recovery characteristics, DO-201AD package, operating range -55°C ~ 150°C. Suitable for general rectification applications where fast recovery is not required.

  2. 1N5402-E3/54 (Vishay General Semiconductor) - ROHS3 compliant, standard recovery characteristics, DO-201AD package matching original specification, operating range -50°C ~ 150°C. Cut tape packaging suitable for automated assembly.

  3. BY251P-E3/54 (Vishay General Semiconductor) - ROHS3 compliant, standard recovery characteristics, DO-201AD package, high inventory (6079 pcs), operating range -55°C ~ 150°C.

  4. GP30D-E3/54 (Vishay General Semiconductor) - ROHS3 compliant, widest operating temperature range (-65°C ~ 175°C), standard recovery characteristics, DO-201AD package.

For Fast Recovery Applications (When trr ≤ 500 ns Required):

  1. 1N5417 (Microchip Technology) - Fast recovery (150 ns), active product status, extended temperature range (-65°C ~ 175°C). Note: RoHS non-compliant; verify regulatory requirements before selection.

  2. 1N5187 (Microchip Technology) - Fast recovery (200 ns), active product status, extended temperature range (-65°C ~ 175°C). Note: RoHS non-compliant; verify regulatory requirements before selection.

Not Recommended for New Designs:

  1. 1N5402RLG (onsemi) - Product status "Not For New Designs" indicates manufacturer discontinuation trajectory. Use only for replacement in existing equipment.

  2. 1N5624-TR (Vishay General Semiconductor) - Avalanche technology with significantly longer reverse recovery time (7.5 µs); use only when avalanche protection is specifically required.

Frequently Asked Questions (FAQ)

Q: Can I use a standard recovery diode (trr > 500 ns) as a direct replacement for the UG3003-T fast recovery diode (trr = 50 ns)?

A: Yes, in most general rectification applications. Standard recovery diodes are functionally compatible with fast recovery diodes when the application circuit does not depend on rapid switching performance. However, applications with high-frequency switching or stringent EMI requirements may require fast recovery characteristics. Verify circuit performance requirements before substitution.

Q: What is the difference between DO-201AD and DO-27 packages?

A: DO-201AD and DO-27 are equivalent axial through-hole package designations for the same physical form factor. These terms are used interchangeably by different manufacturers. Parts specified as DO-27 (DO-201AD) are physically compatible with DO-201AD footprints.

Q: Are 1N5402-E3/54, 1N5402-G, and 1N5402G the same part?

A: These are variants of the 1N5402 base part number from different manufacturers (Vishay, Comchip, and Taiwan Semiconductor respectively) with different packaging formats (Cut Tape, Tape & Box, and Tape & Reel). The electrical specifications are equivalent. Selection depends on packaging requirements and inventory availability.

Q: Why do some substitute parts have higher forward voltage (Vf) ratings?

A: Forward voltage specifications are typically rated at different current levels. For example, 1N5187 specifies Vf at 9 A while UG3003-T specifies Vf at 3 A. At the actual operating current of 3 A, the forward voltage will be lower than the rated specification. Verify actual operating conditions in your circuit to confirm compatibility.

Q: Can I use 1N5624-TR as a substitute for UG3003-T?

A: 1N5624-TR meets the voltage and current requirements (200 V, 3 A) but uses avalanche technology with significantly longer reverse recovery time (7.5 µs). This part is suitable only for applications requiring avalanche protection. For standard rectification, use standard or fast recovery diodes instead.

Q: What does "Not For New Designs" mean for 1N5402RLG?

A: This product status indicates the manufacturer (onsemi) is in the process of discontinuing this part. While currently available, it should not be selected for new product designs. Use only for replacement in existing equipment or when no other alternatives are available. Plan migration to active alternatives for long-term production.

Q: Are RoHS non-compliant parts (1N5187, 1N5417) acceptable substitutes?

A: RoHS compliance depends on your end-product regulatory requirements and target markets. If your application requires ROHS3 compliance, select only ROHS3-compliant alternatives such as 1N5402G, 1N5402-E3/54, BY251P-E3/54, or GP30D-E3/54. If RoHS compliance is not required, RoHS non-compliant parts are functionally acceptable.

Q: Which substitute part has the best availability?

A: 1N5624-TR has the highest inventory (15,288 pcs), followed by 1N5402RLG (3,659 pcs) and 1N5402G (2,110 pcs). However, 1N5624-TR is an avalanche diode and not recommended for general rectification. For standard rectification applications, 1N5402G offers the best combination of availability and active product status.

Q: Can I mix different substitute parts in the same circuit?

A: Yes, provided all selected parts meet the circuit's voltage, current, and temperature requirements. However, for consistency in manufacturing and quality control, use a single part number across identical circuit positions when possible.

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