UG2003-T Equivalent & Substitute Parts

Part Overview

The UG2003-T is a general-purpose rectifier diode manufactured by Diodes Incorporated, rated for 200 V DC reverse voltage and 2 A average rectified current in a DO-15 through-hole package. This component is classified as obsolete, which necessitates identification of active equivalent and substitute parts for ongoing design support and procurement continuity. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts satisfy the same functional requirements within the allowed parameter ranges for this diode category.

Substiute Parts

UG2003-T
Diodes IncorporatedIn Stock: 1012UG2003-T Datasheet
UG2003-T
Current Part
BYV27-200-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 30397BYV27-200-TAP Datasheet
BYV27-200-TAP
MFR Recommended
BYV27-200-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 4399BYV27-200-TR Datasheet
BYV27-200-TR
MFR Recommended
EGP20D
onsemiIn Stock: 25161EGP20D Datasheet
EGP20D
MFR Recommended
MUR220G
onsemiIn Stock: 4166MUR220G Datasheet
MUR220G
MFR Recommended
MUR220RLG
onsemiIn Stock: 265383MUR220RLG Datasheet
MUR220RLG
MFR Recommended
SBYV27-200-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 4621SBYV27-200-E3/54 Datasheet
SBYV27-200-E3/54
MFR Recommended
SBYV27-200-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1474SBYV27-200-E3/73 Datasheet
SBYV27-200-E3/73
MFR Recommended
HER203G
Taiwan Semiconductor CorporationIn Stock: 1008HER203G Datasheet
HER203G
Parametric Equivalent
HER203G A0G
Taiwan Semiconductor CorporationIn Stock: 8401HER203G A0G Datasheet
HER203G A0G
Parametric Equivalent
UF202G_R2_00001
Panjit International Inc.In Stock: 1005UF202G_R2_00001 Datasheet
UF202G_R2_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 2 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 2 A V @ A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Mounting Type Through Hole
Package / Case DO-204AC, DO-15, Axial
Operating Temperature - Junction -55°C ~ 150°C °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the UG2003-T is determined by strict equivalence in the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2 A
  • Mounting Type: Through Hole
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Acceptable Variation Parameters:

  • Voltage - Forward (Vf) (Max) @ If: Within ±0.12 V of 1 V @ 2 A specification
  • Reverse Recovery Time (trr): ≤ 50 ns
  • Current - Reverse Leakage @ Vr: ≤ 5 µA @ 200 V
  • Operating Temperature - Junction: Minimum -55°C, maximum ≥ 150°C
  • Package / Case: DO-15, DO-204AC, or equivalent axial through-hole configurations

Substitute parts are grouped into two categories: MFR Recommended parts (manufacturer-designated alternatives) and Parametric Equivalent parts (functionally equivalent across all critical parameters). All substitute parts maintain ROHS3 compliance and operate within the specified temperature range.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V @ A] trr [ns] Ir @ Vr [µA @ V] Package Temp Range [°C] Status
UG2003-T Diodes Incorporated 200 2 1 @ 2 50 5 @ 200 DO-15 -55 ~ 150 Obsolete
BYV27-200-TAP Vishay General Semiconductor 200 2 1.07 @ 3 25 1 @ 200 SOD-57 -55 ~ 175 Active
BYV27-200-TR Vishay General Semiconductor 200 2 1.07 @ 3 25 1 @ 200 SOD-57 -55 ~ 175 Active
EGP20D onsemi 200 2 0.95 @ 2 50 5 @ 200 DO-15 -65 ~ 150 Not For New Designs
MUR220G onsemi 200 2 0.95 @ 2 35 2 @ 200 DO-41 -65 ~ 175 Active
MUR220RLG onsemi 200 2 0.95 @ 2 35 2 @ 200 DO-41 -65 ~ 175 Active
SBYV27-200-E3/54 Vishay General Semiconductor 200 2 1.07 @ 3 15 5 @ 200 DO-15 -55 ~ 150 Active
SBYV27-200-E3/73 Vishay General Semiconductor 200 2 1.07 @ 3 15 5 @ 200 DO-15 -55 ~ 150 Active
HER203G Taiwan Semiconductor Corporation 200 2 1 @ 2 50 5 @ 200 DO-15 -55 ~ 150 Active
HER203G A0G Taiwan Semiconductor Corporation 200 2 1 @ 2 50 5 @ 200 DO-15 -55 ~ 150 Active
UF202G_R2_00001 Panjit International Inc. 200 2 1 @ 2 50 1 @ 200 DO-15 -55 ~ 150 Active

Engineering Selection Recommendations

Primary Recommendation for Direct Replacement:

SBYV27-200-E3/54 and SBYV27-200-E3/73 are the preferred active substitutes for the obsolete UG2003-T. Both parts maintain identical package configuration (DO-15), matching voltage and current ratings, equivalent temperature range (-55°C ~ 150°C), and ROHS3 compliance. These Vishay parts offer improved reverse recovery time (15 ns versus 50 ns), resulting in reduced switching losses in rectification circuits. Both are in active production status with substantial inventory availability.

Alternative Selections Based on Application Requirements:

HER203G and HER203G A0G (Taiwan Semiconductor Corporation) provide parametric equivalence to the UG2003-T with identical electrical characteristics and DO-15 packaging. These parts are suitable for applications where the original specifications must be matched precisely. HER203G A0G offers higher inventory availability (8,349 pcs) in cut tape packaging.

UF202G_R2_00001 (Panjit International Inc.) matches the UG2003-T across all critical parameters with the exception of reverse leakage current (1 µA versus 5 µA @ 200 V), representing improved performance. This part is available in tape and reel packaging.

For Applications Tolerating Package Variation:

MUR220RLG and MUR220G (onsemi) substitute the UG2003-T with equivalent electrical performance in DO-41 axial package format. MUR220RLG offers significantly higher inventory (265,300 pcs) and improved reverse recovery time (35 ns). These parts are classified as active and suitable for new designs. Package transition from DO-15 to DO-41 requires PCB layout modification.

BYV27-200-TAP and BYV27-200-TR (Vishay General Semiconductor) employ avalanche technology with SOD-57 packaging. These parts deliver superior reverse recovery time (25 ns) and lower reverse leakage (1 µA @ 200 V), with extended temperature range (-55°C ~ 175°C). Package change from DO-15 to SOD-57 necessitates mechanical redesign.

Parts to Avoid for New Designs:

EGP20D is designated "Not For New Designs" by onsemi and should not be selected for new applications despite parametric compatibility.

Frequently Asked Questions (FAQ)

Q: Can the UG2003-T be directly replaced with SBYV27-200-E3/54 without circuit modification?

A: Yes. SBYV27-200-E3/54 maintains identical DO-15 package configuration, voltage rating (200 V), current rating (2 A), and operating temperature range (-55°C ~ 150°C). The part is a direct mechanical and electrical substitute. The improved reverse recovery time (15 ns versus 50 ns) provides performance enhancement without requiring circuit changes.

Q: What is the difference between HER203G and HER203G A0G?

A: Both parts are parametrically identical with 200 V rating, 2 A current, 1 V forward voltage @ 2 A, and 50 ns reverse recovery time. The difference is packaging format: HER203G is supplied in tape and reel (TR), while HER203G A0G is supplied in cut tape (CT). HER203G A0G has higher inventory availability (8,349 pcs versus 944 pcs).

Q: Why do MUR220RLG and MUR220G use DO-41 package instead of DO-15?

A: MUR220RLG and MUR220G are manufactured in DO-41 axial package format by design. While electrically equivalent to the UG2003-T, the DO-41 package is physically larger and requires different PCB footprint and lead spacing. Selection of these parts necessitates PCB redesign.

Q: Is BYV27-200-TAP suitable for applications requiring the exact same package as UG2003-T?

A: No. BYV27-200-TAP uses SOD-57 package, which differs mechanically from the DO-15 package of UG2003-T. While electrically superior (25 ns reverse recovery time, 1 µA reverse leakage), the package change requires PCB layout modification. For direct package compatibility, select SBYV27-200-E3/54, SBYV27-200-E3/73, HER203G, HER203G A0G, or UF202G_R2_00001.

Q: What does "Fast Recovery ≤ 500ns, > 200mA (Io)" mean for substitution purposes?

A: This specification indicates the diode is classified as a fast recovery rectifier with reverse recovery time not exceeding 500 nanoseconds when conducting currents greater than 200 milliamps. All listed substitute parts meet this classification, ensuring compatibility in high-frequency switching applications.

Q: Can EGP20D be used as a substitute despite its "Not For New Designs" status?

A: EGP20D is parametrically compatible with the UG2003-T (200 V, 2 A, DO-15 package, 50 ns reverse recovery time). However, onsemi designates this part as "Not For New Designs," indicating limited long-term availability and manufacturer support. For new applications, select active-status alternatives such as SBYV27-200-E3/54, HER203G A0G, or UF202G_R2_00001.

Q: What is the significance of reverse recovery time (trr) differences among substitute parts?

A: Reverse recovery time affects switching speed and power dissipation in rectification circuits. The UG2003-T specifies 50 ns. Substitute parts with lower trr values (SBYV27-200-E3/54 at 15 ns, BYV27-200-TAP at 25 ns, MUR220RLG at 35 ns) reduce switching losses and heat generation, improving circuit efficiency. Parts with identical or higher trr values maintain equivalent performance characteristics.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 compliance certification, matching the environmental compliance status of the UG2003-T.

Q: What inventory considerations should guide part selection?

A: MUR220RLG offers the highest inventory availability (265,300 pcs), followed by HER203G A0G (8,349 pcs) and EGP20D (25,100 pcs). For applications requiring immediate procurement, these parts provide supply security. SBYV27-200-E3/54 (4,515 pcs) and SBYV27-200-E3/73 (1,394 pcs) maintain adequate stock for standard production volumes.

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