UG1003-T Equivalent & Substitute Parts

Part Overview

The UG1003-T is a general-purpose rectifier diode manufactured by Diodes Incorporated, rated for 200 V DC reverse voltage and 1 A average rectified current in a DO-41 through-hole package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The UG1003-T features fast recovery characteristics with a reverse recovery time of 50 ns, suitable for applications requiring rapid switching performance in low-voltage rectification circuits.

Substiute Parts

UG1003-T
Diodes IncorporatedIn Stock: 15495UG1003-T Datasheet
UG1003-T
Current Part
UF1003-T
Diodes IncorporatedIn Stock: 1342UF1003-T Datasheet
UF1003-T
Parametric Equivalent
1N3611
Microchip TechnologyIn Stock: 15311N3611 Datasheet
1N3611
MFR Recommended
1N4003G
Taiwan Semiconductor CorporationIn Stock: 279541N4003G Datasheet
1N4003G
MFR Recommended
1N4003GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 67121N4003GP-E3/54 Datasheet
1N4003GP-E3/54
MFR Recommended
1N4003GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 66831N4003GP-E3/73 Datasheet
1N4003GP-E3/73
MFR Recommended
1N4003RLG
onsemiIn Stock: 16041N4003RLG Datasheet
1N4003RLG
MFR Recommended
1N4383GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 87001N4383GP-E3/54 Datasheet
1N4383GP-E3/54
MFR Recommended
1N4935-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 12871N4935-E3/54 Datasheet
1N4935-E3/54
MFR Recommended
1N4935G
Taiwan Semiconductor CorporationIn Stock: 8961N4935G Datasheet
1N4935G
MFR Recommended
1N4935GHB0G
Taiwan Semiconductor CorporationIn Stock: 9711N4935GHB0G Datasheet
1N4935GHB0G
MFR Recommended
1N4935GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 11821N4935GP-E3/54 Datasheet
1N4935GP-E3/54
MFR Recommended
1N4942
Microchip TechnologyIn Stock: 15211N4942 Datasheet
1N4942
MFR Recommended
1N4942GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 139991N4942GP-E3/54 Datasheet
1N4942GP-E3/54
MFR Recommended
1N4942GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 11891N4942GP-E3/73 Datasheet
1N4942GP-E3/73
MFR Recommended
1N5059GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 22851N5059GP-E3/54 Datasheet
1N5059GP-E3/54
MFR Recommended
1N5614
Microchip TechnologyIn Stock: 12661N5614 Datasheet
1N5614
MFR Recommended
1N5615
Semtech CorporationIn Stock: 17051N5615 Datasheet
1N5615
MFR Recommended
1N5615GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 113041N5615GP-E3/54 Datasheet
1N5615GP-E3/54
MFR Recommended
BYV26A-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 10437BYV26A-TAP Datasheet
BYV26A-TAP
MFR Recommended
EGP10D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 6028EGP10D-E3/54 Datasheet
EGP10D-E3/54
MFR Recommended
EGP10D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 3041EGP10D-E3/73 Datasheet
EGP10D-E3/73
MFR Recommended
FR103G R1G
Taiwan Semiconductor CorporationIn Stock: 1091FR103G R1G Datasheet
FR103G R1G
MFR Recommended
MUR120G
onsemiIn Stock: 46248MUR120G Datasheet
MUR120G
MFR Recommended
MUR120RLG
onsemiIn Stock: 109565MUR120RLG Datasheet
MUR120RLG
MFR Recommended
RGP10D
Fairchild SemiconductorIn Stock: 17142RGP10D Datasheet
RGP10D
MFR Recommended
RGP10D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1434RGP10D-E3/54 Datasheet
RGP10D-E3/54
MFR Recommended
RGP10D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 8191RGP10D-E3/73 Datasheet
RGP10D-E3/73
MFR Recommended
RMPG06D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 926RMPG06D-E3/54 Datasheet
RMPG06D-E3/54
MFR Recommended
SF14G R1G
Taiwan Semiconductor CorporationIn Stock: 778SF14G R1G Datasheet
SF14G R1G
MFR Recommended
STTH102
STMicroelectronicsIn Stock: 1615STTH102 Datasheet
STTH102
MFR Recommended
STTH102RL
STMicroelectronicsIn Stock: 15503STTH102RL Datasheet
STTH102RL
MFR Recommended
UF1DHB0G
Taiwan Semiconductor CorporationIn Stock: 781UF1DHB0G Datasheet
UF1DHB0G
MFR Recommended
UG1D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 2361UG1D-E3/54 Datasheet
UG1D-E3/54
MFR Recommended
UG1D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 11450UG1D-E3/73 Datasheet
UG1D-E3/73
MFR Recommended
UF4003
Diotec SemiconductorIn Stock: 15291UF4003 Datasheet
UF4003
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Operating Temperature - Junction -65 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the UG1003-T is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V minimum
  • Current - Average Rectified (Io): 1 A minimum
  • Mounting Type: Through Hole
  • Package compatibility: DO-41, DO-204AL, or equivalent axial packages

Secondary Compatibility Factors:

  • Forward voltage (Vf) at rated current
  • Reverse recovery time (trr) and speed classification
  • Reverse leakage current
  • Operating temperature range
  • RoHS and REACH compliance status

Substitute parts are grouped into two categories: Parametric Equivalents (matching fast recovery characteristics and all primary electrical specifications) and Functional Alternatives (meeting voltage and current ratings with standard recovery characteristics). Parts with identical electrical ratings but different package designations (DO-41 vs. DO-204AL vs. axial) are considered mechanically compatible when mounted in through-hole applications.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] Speed trr [ns] Ir @ Vr [µA] Package Temp Range [°C] Product Status RoHS
UG1003-T Diodes Incorporated 200 1 1.0 @ 1A Fast Recovery ≤ 500ns 50 5 @ 200V DO-41 -65 to 150 Obsolete ROHS3
UF1003-T Diodes Incorporated 200 1 1.0 @ 1A Fast Recovery ≤ 500ns 50 5 @ 200V DO-41 -65 to 150 Active ROHS3
1N3611 Microchip Technology 200 1 1.1 @ 1A Standard Recovery >500ns 1 @ 200V Axial -65 to 175 Active Non-compliant
1N4003G Taiwan Semiconductor Corporation 200 1 1.0 @ 1A Standard Recovery >500ns 5 @ 200V DO-41 -55 to 150 Active ROHS3
1N4003GP-E3/54 Vishay General Semiconductor - Diodes Division 200 1 1.1 @ 1A Standard Recovery >500ns 2000 5 @ 200V DO-41 -65 to 175 Active ROHS3
1N4003GP-E3/73 Vishay General Semiconductor - Diodes Division 200 1 1.1 @ 1A Standard Recovery >500ns 2000 5 @ 200V DO-41 -65 to 175 Active ROHS3
1N4003RLG onsemi 200 1 1.1 @ 1A Standard Recovery >500ns 10 @ 200V Axial -65 to 175 Not For New Designs ROHS3
1N4383GP-E3/54 Vishay General Semiconductor - Diodes Division 200 1 1.0 @ 1A Standard Recovery >500ns 2000 5 @ 200V DO-15 -65 to 175 Active ROHS3
1N4935-E3/54 Vishay General Semiconductor - Diodes Division 200 1 1.2 @ 1A Fast Recovery ≤ 500ns 200 5 @ 200V DO-41 -50 to 150 Active ROHS3
1N4935G Taiwan Semiconductor Corporation 200 1 1.2 @ 1A Fast Recovery ≤ 500ns 200 5 @ 200V DO-41 -55 to 150 Active ROHS3
1N4935GHB0G Taiwan Semiconductor Corporation 200 1 1.2 @ 1A Fast Recovery ≤ 500ns 200 5 @ 200V DO-41 -55 to 150 Active ROHS3

Engineering Selection Recommendations

Parametric Equivalent (Recommended Primary Substitute):

The UF1003-T from Diodes Incorporated is the direct parametric equivalent to the UG1003-T. It maintains identical electrical specifications including 200 V reverse voltage, 1 A average rectified current, 1 V forward voltage at 1 A, and fast recovery characteristics with 50 ns reverse recovery time. The UF1003-T is currently in active product status, ensuring long-term availability. Both parts are ROHS3 compliant and share the same operating temperature range (-65°C to 150°C). The primary difference is packaging format (Cut Tape vs. bulk), which does not affect electrical performance in through-hole applications.

Fast Recovery Alternatives (Electrical Equivalents):

The 1N4935-E3/54 and 1N4935G maintain fast recovery characteristics (≤ 500ns) with 200 ns reverse recovery time, meeting the speed classification of the UG1003-T. Both are rated for 200 V and 1 A with active product status and ROHS3 compliance. The 1N4935-E3/54 extends the operating temperature range to -50°C to 150°C, while the 1N4935G operates from -55°C to 150°C. Forward voltage is slightly elevated at 1.2 V @ 1 A compared to the UG1003-T specification of 1.0 V @ 1 A. These parts are suitable for applications where fast switching performance is required.

Standard Recovery Alternatives (Functional Substitutes):

The 1N4003G, 1N4003GP-E3/54, and 1N4003GP-E3/73 provide functional substitution with identical voltage and current ratings but employ standard recovery characteristics (>500ns). These parts are widely available with active product status and ROHS3 compliance. The 1N4003GP variants extend the operating temperature range to -65°C to 175°C. Forward voltage is specified at 1.0 V @ 1 A (1N4003G) or 1.1 V @ 1 A (1N4003GP variants). These alternatives are appropriate for applications where switching speed is not a critical design parameter.

Package Compatibility Considerations:

The 1N4383GP-E3/54 provides electrical equivalence in a DO-15 (DO-204AC) package instead of DO-41. This part maintains 200 V, 1 A ratings with 1.0 V forward voltage and standard recovery characteristics. Physical package differences require verification of PCB layout compatibility before substitution.

The 1N3611 from Microchip Technology and 1N4003RLG from onsemi are available in axial package configurations. The 1N3611 is not RoHS compliant, which may restrict use in regulated applications. The 1N4003RLG carries a "Not For New Designs" status, limiting its suitability for new development.

Automotive-Grade Option:

The 1N4935GHB0G is qualified to AEC-Q101 automotive standards, providing the same electrical performance as the 1N4935G with automotive-grade reliability assurance. This part is suitable for automotive and harsh-environment applications requiring fast recovery performance.

Frequently Asked Questions (FAQ)

Q: Can the UF1003-T directly replace the UG1003-T without circuit modification?

A: Yes. The UF1003-T is a parametric equivalent with identical electrical specifications: 200 V reverse voltage, 1 A average rectified current, 1 V forward voltage at 1 A, and 50 ns reverse recovery time. Both parts operate across -65°C to 150°C and are ROHS3 compliant. The only difference is packaging format (Cut Tape vs. bulk), which does not affect electrical performance in through-hole applications.

Q: What is the difference between fast recovery and standard recovery diodes in this voltage/current class?

A: Fast recovery diodes (UG1003-T, UF1003-T, 1N4935 series) have reverse recovery times ≤ 500 ns, enabling rapid switching transitions. Standard recovery diodes (1N4003 series) have reverse recovery times > 500 ns. Fast recovery is required in high-frequency switching applications, while standard recovery is sufficient for low-frequency rectification. The UG1003-T specifies 50 ns recovery time, making it suitable for applications requiring rapid switching performance.

Q: Are the 1N4003 series parts suitable replacements for the UG1003-T?

A: The 1N4003 series provides functional substitution for voltage and current ratings (200 V, 1 A) but employs standard recovery characteristics instead of fast recovery. If the application circuit depends on the fast switching performance of the UG1003-T (50 ns recovery time), the 1N4003 series is not appropriate. If the circuit operates at low switching frequencies where recovery time is not critical, the 1N4003 series is acceptable. Verify circuit performance requirements before substitution.

Q: What is the significance of the different package designations (DO-41, DO-204AL, DO-15)?

A: DO-41 and DO-204AL are equivalent designations for the same axial through-hole package used by the UG1003-T and most substitute parts. DO-15 (DO-204AC) is a smaller axial package used by the 1N4383GP-E3/54. All three are through-hole packages suitable for PCB mounting, but physical dimensions differ. Verify PCB layout compatibility before substituting parts with different package designations.

Q: Why is the 1N4003RLG marked "Not For New Designs"?

A: The "Not For New Designs" status indicates that the manufacturer (onsemi) is not recommending this part for new circuit development. While the part remains available and functional, it may have limited long-term availability or may be superseded by newer alternatives. For new designs, select parts with "Active" product status such as the 1N4003GP-E3/54 or 1N4003G.

Q: Is the 1N3611 from Microchip Technology a suitable replacement?

A: The 1N3611 meets the voltage (200 V) and current (1 A) requirements but is not RoHS compliant, which restricts its use in regulated applications and regions with RoHS requirements. Additionally, it employs standard recovery characteristics and is available only in axial package format. The 1N3611 is suitable only for legacy applications where RoHS compliance is not required and switching speed is not critical.

Q: What does AEC-Q101 qualification mean for the 1N4935GHB0G?

A: AEC-Q101 is an automotive industry standard qualification for discrete semiconductors. The 1N4935GHB0G meets this qualification, indicating it has been tested and validated for automotive applications including temperature cycling, vibration, and reliability requirements. This part is suitable for automotive and harsh-environment applications requiring fast recovery performance and automotive-grade reliability assurance.

Q: Can I use the 1N4935 series as a direct replacement for the UG1003-T?

A: The 1N4935 series (1N4935-E3/54, 1N4935G, 1N4935GHB0G) maintains fast recovery characteristics and 200 V, 1 A ratings, making them electrically compatible. However, forward voltage is specified at 1.2 V @ 1 A compared to the UG1003-T specification of 1.0 V @ 1 A. This 0.2 V difference may affect circuit performance in applications with tight voltage budgets or high-current rectification stages. Verify circuit tolerance before substitution.

Q: What is the difference between the 1N4003GP-E3/54 and 1N4003GP-E3/73?

A: Both parts are electrically identical with 200 V reverse voltage, 1 A average rectified current, 1.1 V forward voltage at 1 A, and standard recovery characteristics. The difference is in the tape reel configuration used for automated assembly (E3/54 vs. E3/73). For manual assembly or through-hole applications, both parts are functionally equivalent. Select based on assembly equipment compatibility.

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