UFS320JE3/TR13 Equivalent & Substitute Parts

Part Overview

The UFS320JE3/TR13 is a general-purpose rectifier diode manufactured by Microchip Technology, rated for 200 V DC reverse voltage and 3 A average rectified current in a surface-mount DO-214AB (SMC) package. This component is classified as Active product status and is RoHS3 compliant. Substitute parts are identified when equivalent electrical ratings, package compatibility, and thermal specifications align with the original component's operational requirements.

Key Parameters

Parameter	Value
Voltage - DC Reverse (Vr) (Max)	200 V
Current - Average Rectified (Io)	3 A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 3 A
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	30 ns
Current - Reverse Leakage @ Vr	10 µA @ 200 V
Package / Case	DO-214AB, SMC
Mounting Type	Surface Mount
Operating Temperature - Junction	-55°C ~ 175°C
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the UFS320JE3/TR13 are qualified based on the following criteria:

Primary Electrical Parameters:

Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3 A
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Package Compatibility:

Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount

Environmental & Compliance:

RoHS3 Compliance
Operating Temperature Range: Minimum -55°C junction temperature required

Substitute parts must maintain the 200 V / 3 A electrical specification and surface-mount DO-214AB package format. Forward voltage (Vf), reverse recovery time (trr), and reverse leakage current may vary within acceptable ranges for general-purpose rectification applications. Operating temperature range may differ; however, parts must support the minimum -55°C lower bound or higher.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max)	Io	Vf (Max) @ If	trr (ns)	Ir @ Vr	Tj (°C)	Package	RoHS3
UFS320JE3/TR13	Microchip Technology	200 V	3 A	950 mV @ 3 A	30	10 µA @ 200 V	-55 ~ 175	DO-214AB	Yes
ER3D-TP	Micro Commercial Co	200 V	3 A	950 mV @ 3 A	35	5 µA @ 200 V	-50 ~ 175	DO-214AB	Yes
ES3D	Diotec Semiconductor	200 V	3 A	900 mV @ 3 A	20	5 µA @ 200 V	-50 ~ 150	DO-214AB	Yes
ES3D-13-F	Diodes Incorporated	200 V	3 A	900 mV @ 3 A	25	10 µA @ 200 V	-55 ~ 150	DO-214AB	Yes
ES3D-E3/57T	Vishay General Semiconductor - Diodes Division	200 V	3 A	900 mV @ 3 A	30	10 µA @ 200 V	-55 ~ 150	DO-214AB	Yes
ES3D-E3/9AT	Vishay General Semiconductor - Diodes Division	200 V	3 A	900 mV @ 3 A	30	10 µA @ 200 V	-55 ~ 150	DO-214AB	Yes
ES3DHE3_A/H	Vishay General Semiconductor - Diodes Division	200 V	3 A	900 mV @ 3 A	30	10 µA @ 200 V	-55 ~ 150	DO-214AB	Yes
ES3DHE3_A/I	Vishay General Semiconductor - Diodes Division	200 V	3 A	900 mV @ 3 A	30	10 µA @ 200 V	-55 ~ 150	DO-214AB	Yes
ESH3D-E3/57T	Vishay General Semiconductor - Diodes Division	200 V	3 A	900 mV @ 3 A	40	5 µA @ 200 V	-55 ~ 175	DO-214AB	Yes
MURS320-13-F	Diodes Incorporated	200 V	3 A	875 mV @ 3 A	25	5 µA @ 200 V	-65 ~ 175	DO-214AB	Yes
S3D-13-F	Diodes Incorporated	200 V	3 A	1.15 V @ 3 A	N/A	10 µA @ 200 V	-65 ~ 150	DO-214AB	Yes

Engineering Selection Recommendations

All substitute parts listed maintain Active product status and RoHS3 compliance, meeting the regulatory and environmental requirements of the UFS320JE3/TR13.

Direct Electrical Equivalents (Fast Recovery, 200 V / 3 A):

ER3D-TP, ES3D, ES3D-13-F, ES3D-E3/57T, ES3D-E3/9AT, ES3DHE3_A/H, ES3DHE3_A/I, ESH3D-E3/57T, and MURS320-13-F all satisfy the 200 V reverse voltage and 3 A current ratings with fast recovery characteristics.

Automotive-Qualified Options:

ES3DHE3_A/H and ES3DHE3_A/I carry AEC-Q101 qualification, suitable for automotive applications requiring enhanced reliability screening.

Temperature Range Considerations:

UFS320JE3/TR13 operates to 175°C junction temperature. ESH3D-E3/57T and MURS320-13-F also support 175°C operation. ER3D-TP, ES3D, ES3D-13-F, ES3D-E3/57T, ES3D-E3/9AT, ES3DHE3_A/H, and ES3DHE3_A/I are rated to 150°C maximum junction temperature.

Forward Voltage Performance:

MURS320-13-F exhibits the lowest forward voltage at 875 mV @ 3 A, compared to the original 950 mV specification. S3D-13-F operates at 1.15 V @ 3 A and uses standard recovery technology rather than fast recovery, limiting its suitability for high-frequency switching applications.

Frequently Asked Questions (FAQ)

Q: Can S3D-13-F be used as a direct substitute for UFS320JE3/TR13?

A: S3D-13-F is not recommended as a direct substitute. While it maintains the 200 V / 3 A electrical rating and DO-214AB package, it employs standard recovery technology (>500ns) rather than fast recovery (≤500ns) specified for the UFS320JE3/TR13. Forward voltage is also elevated at 1.15 V compared to 950 mV, resulting in higher power dissipation.

Q: What is the significance of reverse recovery time (trr) differences among substitute parts?

A: Reverse recovery time affects switching speed and electromagnetic interference characteristics. The UFS320JE3/TR13 specifies 30 ns trr. Substitute parts range from 20 ns (ES3D) to 40 ns (ESH3D-E3/57T). Faster recovery times reduce switching losses in high-frequency applications; slower recovery times may increase switching noise. Selection depends on circuit operating frequency and EMI requirements.

Q: Are all substitute parts available in the same packaging format?

A: All substitute parts use the DO-214AB (SMC) surface-mount package. However, packaging options differ: some are supplied in Tape & Reel (TR) format, while others are available in Cut Tape (CT) & Digi-Reel® format. Verify packaging availability with your supplier for production requirements.

Q: Which substitute parts support the full -55°C to 175°C temperature range of the original part?

A: ESH3D-E3/57T and MURS320-13-F both support -55°C to 175°C junction temperature operation, matching the UFS320JE3/TR13 specification. Other substitutes are limited to -50°C or -65°C minimum with 150°C maximum, requiring thermal design review for extreme temperature applications.

Q: What is the difference between ES3DHE3_A/H and ES3DHE3_A/I?

A: Both parts are electrically identical 200 V / 3 A fast recovery diodes with AEC-Q101 automotive qualification. The designation suffix (_A/H versus _A/I) indicates different manufacturing or qualification batches. Electrical and thermal specifications are equivalent.

Q: Is forward voltage variation among substitutes significant for circuit design?

A: Forward voltage ranges from 875 mV (MURS320-13-F) to 1.15 V (S3D-13-F) across substitute options, compared to 950 mV for the original. In rectification circuits, this variation affects voltage drop and power dissipation. For precision applications, forward voltage tolerance must be evaluated against circuit design margins. Fast recovery diodes (≤500ns) typically exhibit lower forward voltage than standard recovery types.

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