UFS110JE3/TR13 Equivalent & Substitute Parts

Part Overview

The UFS110JE3/TR13 is a general-purpose rectifier diode manufactured by Microchip Technology, rated for 100 V DC reverse voltage and 1 A average rectified current. The device is packaged in DO-214BA surface mount configuration and supplied on tape and reel. This part is classified as Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when design specifications allow for equivalent electrical performance with different package geometries or recovery characteristics.

Substiute Parts

UFS110JE3/TR13
Microchip TechnologyIn Stock: 683UFS110JE3/TR13 Datasheet
UFS110JE3/TR13
Current Part
EGF1B
Fairchild SemiconductorIn Stock: 4165EGF1B Datasheet
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EGF1B-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 15362EGF1B-E3/5CA Datasheet
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EGF1B-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 30297EGF1B-E3/67A Datasheet
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ES1B
YAGEOIn Stock: 65171ES1B Datasheet
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ES1B-13-F
Diodes IncorporatedIn Stock: 35153ES1B-13-F Datasheet
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ES1B-E3/5AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 27131ES1B-E3/5AT Datasheet
ES1B-E3/5AT
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ES1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 70592ES1B-E3/61T Datasheet
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ES1B-LTP
Micro Commercial CoIn Stock: 17292ES1B-LTP Datasheet
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ESH1B-E3/61T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10156ESH1B-E3/61T Datasheet
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GF1B-E3/5CA
Vishay General Semiconductor - Diodes DivisionIn Stock: 15404GF1B-E3/5CA Datasheet
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GF1B-E3/67A
Vishay General Semiconductor - Diodes DivisionIn Stock: 50211GF1B-E3/67A Datasheet
GF1B-E3/67A
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GS1B-LTP
Micro Commercial CoIn Stock: 21523GS1B-LTP Datasheet
GS1B-LTP
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RS1B R3G
Taiwan Semiconductor CorporationIn Stock: 4541RS1B R3G Datasheet
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RS2BA-13-F
Diodes IncorporatedIn Stock: 5243RS2BA-13-F Datasheet
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 1 A mV
Reverse Recovery Time (trr) 30 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) -
Package / Case DO-214BA -
Operating Temperature - Junction -55°C ~ 175°C °C
Mounting Type Surface Mount -
RoHS Status ROHS3 Compliant -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitution of the UFS110JE3/TR13 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 100 V minimum
  • Current - Average Rectified (Io): 1 A minimum
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): ≤ 50 ns
  • Current - Reverse Leakage @ Vr: ≤ 10 µA @ 100 V
  • Mounting Type: Surface Mount
  • RoHS Status: ROHS3 Compliant

Package Compatibility Considerations: Substitutes are grouped into two package categories:

  1. DO-214BA Package (Direct Pin-Compatible): EGF1B-E3/5CA, EGF1B-E3/67A, GF1B-E3/5CA
  2. DO-214AC/SMA Package (Alternative Footprint): EGF1B, ES1B-E3/5AT, ES1B-E3/61T, ES1B-13-F, ES1B-LTP, ESH1B-E3/61T

Parts meeting all electrical criteria but with different package types require PCB layout modification and are suitable only when design specifications permit package substitution.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 1A [mV] trr [ns] Ir @ Vr [µA] Package Product Status
UFS110JE3/TR13 Microchip Technology 100 1 950 30 5 @ 100V DO-214BA Active
EGF1B-E3/5CA Vishay General Semiconductor 100 1 1000 50 5 @ 100V DO-214BA Active
EGF1B-E3/67A Vishay General Semiconductor 100 1 1000 50 5 @ 100V DO-214BA Not For New Designs
EGF1B Fairchild Semiconductor 100 1 1000 50 10 @ 100V DO-214AC (SMA) Active
ES1B-E3/5AT Vishay General Semiconductor 100 1 920 25 5 @ 100V DO-214AC (SMA) Active
ES1B-E3/61T Vishay General Semiconductor 100 1 920 25 5 @ 100V DO-214AC (SMA) Active
ES1B-13-F Diodes Incorporated 100 1 920 25 5 @ 100V DO-214AC (SMA) Active
ES1B-LTP Micro Commercial Co 100 1 950 35 5 @ 100V DO-214AC (SMA) Not For New Designs
ESH1B-E3/61T Vishay General Semiconductor 100 1 900 25 1 @ 100V DO-214AC (SMA) Active
GF1B-E3/5CA Vishay General Semiconductor 100 1 1100 2000 5 @ 100V DO-214BA Active
ES1B YAGEO 100 1 950 - - DO-214AC Active

Engineering Selection Recommendations

Tier 1 - Direct Substitutes (DO-214BA Package, Active Status):

EGF1B-E3/5CA is the primary equivalent substitute. This part maintains identical package geometry (DO-214BA), meets all electrical specifications, and carries Active product status with RoHS3 compliance. The reverse recovery time of 50 ns is within acceptable tolerance for fast recovery applications. This substitute is recommended for designs requiring pin-for-pin compatibility without PCB modification.

Tier 2 - Electrical Equivalents (DO-214AC/SMA Package, Active Status):

ES1B-E3/5AT, ES1B-E3/61T, ES1B-13-F, and ESH1B-E3/61T are electrically equivalent alternatives with superior reverse recovery characteristics (25 ns). These parts require PCB layout modification due to different package geometry (DO-214AC/SMA vs. DO-214BA). All four maintain Active product status and RoHS3 compliance. ESH1B-E3/61T offers the lowest reverse leakage current (1 µA @ 100 V) and lowest forward voltage drop (900 mV @ 1 A), providing enhanced performance characteristics.

Tier 3 - Acceptable Substitutes (Not For New Designs Status):

EGF1B-E3/67A and ES1B-LTP meet electrical requirements but carry "Not For New Designs" product status. These parts are suitable only for legacy design maintenance or when inventory constraints require their use. New designs should avoid these parts.

Tier 4 - Limited Substitutes:

GF1B-E3/5CA maintains DO-214BA package compatibility but exhibits standard recovery characteristics (2 µs reverse recovery time) rather than fast recovery. This part is unsuitable for applications requiring fast recovery performance and should not be selected as a substitute for the UFS110JE3/TR13.

EGF1B (Fairchild Semiconductor) requires package conversion to DO-214AC/SMA and specifies higher reverse leakage current (10 µA @ 100 V). This part is acceptable only when package substitution is permitted and higher leakage specifications are tolerated.

Frequently Asked Questions (FAQ)

Q: Can EGF1B-E3/5CA be used as a direct replacement for UFS110JE3/TR13?

A: Yes. EGF1B-E3/5CA is a direct substitute with identical DO-214BA package geometry, matching voltage and current ratings, and equivalent fast recovery characteristics. No PCB modification is required. Both parts are RoHS3 compliant with MSL 1 rating.

Q: What is the difference between DO-214BA and DO-214AC packages?

A: DO-214BA and DO-214AC are distinct surface mount package geometries with different footprints and pin configurations. Parts specified for DO-214BA cannot be directly substituted with DO-214AC packages without PCB layout redesign. Mechanical compatibility must be verified before substitution.

Q: Why do some substitute parts have faster reverse recovery times than the original?

A: Reverse recovery time (trr) is a manufacturing characteristic that varies between semiconductor suppliers and product lines. Faster recovery times (lower trr values) indicate improved switching performance and reduced switching losses. Parts with faster recovery times are electrically superior and fully compatible with designs specified for the original part.

Q: Are parts marked "Not For New Designs" suitable for production use?

A: Parts with "Not For New Designs" status are suitable only for sustaining production of existing designs or legacy system maintenance. These parts should not be selected for new product development. Active status parts are recommended for all new designs.

Q: What does RoHS3 compliance mean for substitution?

A: RoHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements. All listed substitute parts carry RoHS3 compliance, ensuring regulatory equivalence and suitability for applications requiring RoHS certification.

Q: Can ES1B-E3/5AT replace UFS110JE3/TR13 in existing PCB designs?

A: ES1B-E3/5AT cannot be used as a direct PCB replacement due to different package geometry (DO-214AC/SMA vs. DO-214BA). PCB layout modification is required. However, the part is electrically equivalent and offers superior reverse recovery performance (25 ns vs. 30 ns).

Q: What is the significance of reverse leakage current specifications?

A: Reverse leakage current (Ir) represents the small current flowing through the diode in reverse bias condition. Lower leakage current values indicate better diode quality and reduced power dissipation in reverse bias operation. All listed substitutes maintain reverse leakage current at or below 10 µA @ 100 V, meeting application requirements.

Q: Is forward voltage drop critical for substitution decisions?

A: Forward voltage drop (Vf) affects power dissipation and circuit performance. The UFS110JE3/TR13 specifies 950 mV @ 1 A. Substitute parts range from 900 mV to 1100 mV @ 1 A. Parts with lower Vf values (900-920 mV) provide improved efficiency. Parts with higher Vf values (1000-1100 mV) are acceptable if circuit design tolerates increased power dissipation.

Q: What packaging options are available for the UFS110JE3/TR13?

A: The UFS110JE3/TR13 is supplied in Tape & Reel (TR) format. Substitute parts are available in multiple packaging formats: Tape & Reel (TR), Cut Tape (CT), and Digi-Reel. Packaging format selection depends on manufacturing process requirements and inventory management practices.

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