UF1M B0G Equivalent & Substitute Parts

Part Overview

The UF1M B0G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 1000 V DC reverse voltage and 1 A average rectified current in a through-hole DO-204AL (DO-41) axial package. This component is classified as Active product status and is RoHS3 compliant. Substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required, or when design specifications allow for compatible alternatives with equivalent electrical performance characteristics.

Substiute Parts

UF1M B0G
Taiwan Semiconductor CorporationIn Stock: 1213UF1M B0G Datasheet
UF1M B0G
Current Part
UF1007-T
Diodes IncorporatedIn Stock: 5427UF1007-T Datasheet
UF1007-T
Direct
UF4007GP-TP
Micro Commercial CoIn Stock: 40966UF4007GP-TP Datasheet
UF4007GP-TP
Direct
UF4008-G
Comchip TechnologyIn Stock: 9309UF4008-G Datasheet
UF4008-G
Direct
1N4007-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 182731N4007-E3/73 Datasheet
1N4007-E3/73
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1N4007-G
Comchip TechnologyIn Stock: 1413311N4007-G Datasheet
1N4007-G
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1N4007-T
Diodes IncorporatedIn Stock: 1501481N4007-T Datasheet
1N4007-T
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1N4007E-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1394361N4007E-E3/54 Datasheet
1N4007E-E3/54
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1N4007E-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 550491N4007E-E3/73 Datasheet
1N4007E-E3/73
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1N4007FFG
onsemiIn Stock: 653971N4007FFG Datasheet
1N4007FFG
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1N4007G
Taiwan Semiconductor CorporationIn Stock: 1714611N4007G Datasheet
1N4007G
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1N4007GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 153881N4007GP-E3/73 Datasheet
1N4007GP-E3/73
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1N4007GP-TP
Micro Commercial CoIn Stock: 82201N4007GP-TP Datasheet
1N4007GP-TP
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1N4007GPE-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1103271N4007GPE-E3/54 Datasheet
1N4007GPE-E3/54
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1N4007GPE-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 147531N4007GPE-E3/73 Datasheet
1N4007GPE-E3/73
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1N4007RLG
onsemiIn Stock: 1503791N4007RLG Datasheet
1N4007RLG
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1N4249GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 120151N4249GP-E3/54 Datasheet
1N4249GP-E3/54
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1N4948GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 92781N4948GP-E3/54 Datasheet
1N4948GP-E3/54
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A1N4007G-G
Comchip TechnologyIn Stock: 1980A1N4007G-G Datasheet
A1N4007G-G
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BA159GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 5783BA159GP-E3/54 Datasheet
BA159GP-E3/54
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BA159GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 6553BA159GP-E3/73 Datasheet
BA159GP-E3/73
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GP10M-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 11652GP10M-E3/54 Datasheet
GP10M-E3/54
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MUR2100EG
onsemiIn Stock: 9032MUR2100EG Datasheet
MUR2100EG
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RGP10M-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 2447RGP10M-E3/54 Datasheet
RGP10M-E3/54
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RGP10M-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 2188RGP10M-E3/73 Datasheet
RGP10M-E3/73
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RGP10ME-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 8375RGP10ME-E3/73 Datasheet
RGP10ME-E3/73
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STTH110RL
STMicroelectronicsIn Stock: 5592STTH110RL Datasheet
STTH110RL
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UF4007
Diotec SemiconductorIn Stock: 41628UF4007 Datasheet
UF4007
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UF4007-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 38205UF4007-E3/54 Datasheet
UF4007-E3/54
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UF4007-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 389240UF4007-E3/73 Datasheet
UF4007-E3/73
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Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 1000 V
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Operating Temperature - Junction -55°C ~ 150°C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the UF1M B0G are classified based on electrical parameter compatibility and product status. The primary substitution criteria are:

Electrical Compatibility Parameters:

  • Voltage - DC Reverse (Vr) (Max): 1000 V (required match)
  • Current - Average Rectified (Io): 1 A (required match)
  • Mounting Type: Through Hole (required match)
  • Package / Case: DO-204AL, DO-41, Axial (required match)

Secondary Compatibility Parameters:

  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A or lower
  • Reverse Recovery Time (trr): 75 ns or lower
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V or lower
  • Operating Temperature Range: Must encompass or exceed -55°C to 150°C

Product Status Classification:

  • Direct Substitutes: Parts with identical electrical specifications and Active product status
  • Compatible Alternatives: Parts meeting all electrical requirements with different recovery speed characteristics or product status variations
  • Obsolete Alternatives: Parts meeting electrical requirements but with Obsolete or Not For New Designs status

Parameter Comparison

Part Number Manufacturer Vr (Max) Io Vf (Max) @ 1A Speed trr Ir @ Vr Tj Range Product Status
UF1M B0G Taiwan Semiconductor Corporation 1000 V 1 A 1.7 V Fast Recovery ≤ 500ns 75 ns 5 µA @ 1000 V -55°C ~ 150°C Active
UF1007-T Diodes Incorporated 1000 V 1 A 1.7 V Fast Recovery ≤ 500ns 75 ns 5 µA @ 1000 V -65°C ~ 150°C Active
UF4007GP-TP Micro Commercial Co 1000 V 1 A 1.7 V Fast Recovery ≤ 500ns 75 ns 5 µA @ 1000 V -55°C ~ 150°C Active
UF4008-G Comchip Technology 1000 V 1 A 1.7 V Fast Recovery ≤ 500ns 75 ns 5 µA @ 1000 V -55°C ~ 150°C Obsolete
1N4007-E3/73 Vishay General Semiconductor - Diodes Division 1000 V 1 A 1.1 V Standard Recovery >500ns Not specified 5 µA @ 1000 V -50°C ~ 150°C Active
1N4007-G Comchip Technology 1000 V 1 A 1.1 V Standard Recovery >500ns Not specified 5 µA @ 1000 V -55°C ~ 150°C Active
1N4007-T Diodes Incorporated 1000 V 1 A 1.0 V Standard Recovery >500ns Not specified 5 µA @ 1000 V -65°C ~ 150°C Last Time Buy
1N4007E-E3/54 Vishay General Semiconductor - Diodes Division 1000 V 1 A 1.1 V Standard Recovery >500ns Not specified 5 µA @ 1000 V -50°C ~ 150°C Active
1N4007E-E3/73 Vishay General Semiconductor - Diodes Division 1000 V 1 A 1.1 V Standard Recovery >500ns Not specified 5 µA @ 1000 V -55°C ~ 150°C Active
1N4007FFG onsemi 1000 V 1 A 1.1 V Standard Recovery >500ns Not specified 10 µA @ 1000 V -65°C ~ 175°C Not For New Designs
1N4007G Taiwan Semiconductor Corporation 1000 V 1 A 1.0 V Standard Recovery >500ns Not specified 5 µA @ 1000 V -55°C ~ 150°C Active

Engineering Selection Recommendations

Direct Substitutes (Identical Electrical Performance):

UF1007-T and UF4007GP-TP are direct electrical equivalents to the UF1M B0G. Both maintain fast recovery characteristics (≤ 500ns), 75 ns reverse recovery time, and identical voltage/current ratings. UF1007-T offers extended lower temperature operation (-65°C minimum). Both parts are Active product status with RoHS3 compliance and REACH unaffected status.

Compatible Alternatives (Different Recovery Speed):

The 1N4007 series parts (1N4007-E3/73, 1N4007-G, 1N4007-T, 1N4007E-E3/54, 1N4007E-E3/73, and 1N4007G) meet all voltage, current, and package requirements but operate with standard recovery characteristics (>500ns) rather than fast recovery. These parts feature lower forward voltage drops (1.0 V to 1.1 V versus 1.7 V) and are suitable for applications where recovery speed is not a critical design parameter. All listed 1N4007 variants are Active product status except 1N4007-T, which is Last Time Buy.

Obsolete and Restricted Status:

UF4008-G meets all electrical specifications but carries Obsolete product status and should not be selected for new designs. 1N4007FFG carries Not For New Designs status and exhibits higher reverse leakage current (10 µA versus 5 µA), making it unsuitable for new applications.

Compliance and Certification:

All recommended substitute parts maintain RoHS3 compliance and REACH unaffected status, consistent with the primary part. Moisture sensitivity level is 1 (Unlimited) across all parts, indicating no special handling requirements.

Frequently Asked Questions (FAQ)

Q: Can I substitute a 1N4007 series diode for the UF1M B0G?

A: Yes, 1N4007 series parts are electrically compatible substitutes. The primary difference is recovery speed: UF1M B0G operates with fast recovery (≤ 500ns, 75 ns trr), while 1N4007 parts use standard recovery (>500ns). The 1N4007 series also exhibits lower forward voltage drop (1.0-1.1 V versus 1.7 V). Substitution is valid when circuit design does not require fast recovery characteristics.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes (≤ 500ns) have shorter reverse recovery time (75 ns for UF1M B0G), reducing switching losses in high-frequency applications. Standard recovery diodes (>500ns) are suitable for lower-frequency rectification circuits. The choice depends on application frequency and efficiency requirements.

Q: Are all substitute parts available in the same package?

A: All listed substitute parts are available in DO-204AL (DO-41) axial through-hole package, matching the primary part. Packaging format is consistent across all alternatives.

Q: Can I use 1N4007FFG as a substitute?

A: 1N4007FFG is not recommended for new designs due to its Not For New Designs product status. Additionally, it exhibits higher reverse leakage current (10 µA versus 5 µA at 1000 V), which may affect circuit performance in sensitive applications.

Q: What is the temperature operating range difference between UF1M B0G and UF1007-T?

A: UF1M B0G operates from -55°C to 150°C, while UF1007-T extends the lower temperature limit to -65°C. Both maintain the same 150°C upper limit. UF1007-T is suitable for applications requiring extended low-temperature operation.

Q: Are there any compliance differences between the main part and substitutes?

A: All listed substitute parts maintain identical RoHS3 compliance, REACH unaffected status, and moisture sensitivity level (MSL 1 - Unlimited). No compliance trade-offs exist when selecting from the recommended alternatives.

Q: Which substitute offers the best forward voltage performance?

A: The 1N4007-T variant offers the lowest forward voltage drop at 1.0 V @ 1 A, compared to 1.7 V for UF1M B0G. However, 1N4007-T carries Last Time Buy status. For Active product status with low forward voltage, 1N4007G offers 1.0 V @ 1 A performance.

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