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UF1M B0G Equivalent & Substitute Parts
Part Overview
The UF1M B0G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 1000 V DC reverse voltage and 1 A average rectified current in a through-hole DO-204AL (DO-41) axial package. This component is classified as Active product status and is RoHS3 compliant. Substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required, or when design specifications allow for compatible alternatives with equivalent electrical performance characteristics.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Current - Average Rectified (Io) | 1 A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Operating Temperature - Junction | -55°C ~ 150°C |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitute parts for the UF1M B0G are classified based on electrical parameter compatibility and product status. The primary substitution criteria are:
Electrical Compatibility Parameters:
- Voltage - DC Reverse (Vr) (Max): 1000 V (required match)
- Current - Average Rectified (Io): 1 A (required match)
- Mounting Type: Through Hole (required match)
- Package / Case: DO-204AL, DO-41, Axial (required match)
Secondary Compatibility Parameters:
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A or lower
- Reverse Recovery Time (trr): 75 ns or lower
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V or lower
- Operating Temperature Range: Must encompass or exceed -55°C to 150°C
Product Status Classification:
- Direct Substitutes: Parts with identical electrical specifications and Active product status
- Compatible Alternatives: Parts meeting all electrical requirements with different recovery speed characteristics or product status variations
- Obsolete Alternatives: Parts meeting electrical requirements but with Obsolete or Not For New Designs status
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) | Io | Vf (Max) @ 1A | Speed | trr | Ir @ Vr | Tj Range | Product Status |
|---|---|---|---|---|---|---|---|---|---|
| UF1M B0G | Taiwan Semiconductor Corporation | 1000 V | 1 A | 1.7 V | Fast Recovery ≤ 500ns | 75 ns | 5 µA @ 1000 V | -55°C ~ 150°C | Active |
| UF1007-T | Diodes Incorporated | 1000 V | 1 A | 1.7 V | Fast Recovery ≤ 500ns | 75 ns | 5 µA @ 1000 V | -65°C ~ 150°C | Active |
| UF4007GP-TP | Micro Commercial Co | 1000 V | 1 A | 1.7 V | Fast Recovery ≤ 500ns | 75 ns | 5 µA @ 1000 V | -55°C ~ 150°C | Active |
| UF4008-G | Comchip Technology | 1000 V | 1 A | 1.7 V | Fast Recovery ≤ 500ns | 75 ns | 5 µA @ 1000 V | -55°C ~ 150°C | Obsolete |
| 1N4007-E3/73 | Vishay General Semiconductor - Diodes Division | 1000 V | 1 A | 1.1 V | Standard Recovery >500ns | Not specified | 5 µA @ 1000 V | -50°C ~ 150°C | Active |
| 1N4007-G | Comchip Technology | 1000 V | 1 A | 1.1 V | Standard Recovery >500ns | Not specified | 5 µA @ 1000 V | -55°C ~ 150°C | Active |
| 1N4007-T | Diodes Incorporated | 1000 V | 1 A | 1.0 V | Standard Recovery >500ns | Not specified | 5 µA @ 1000 V | -65°C ~ 150°C | Last Time Buy |
| 1N4007E-E3/54 | Vishay General Semiconductor - Diodes Division | 1000 V | 1 A | 1.1 V | Standard Recovery >500ns | Not specified | 5 µA @ 1000 V | -50°C ~ 150°C | Active |
| 1N4007E-E3/73 | Vishay General Semiconductor - Diodes Division | 1000 V | 1 A | 1.1 V | Standard Recovery >500ns | Not specified | 5 µA @ 1000 V | -55°C ~ 150°C | Active |
| 1N4007FFG | onsemi | 1000 V | 1 A | 1.1 V | Standard Recovery >500ns | Not specified | 10 µA @ 1000 V | -65°C ~ 175°C | Not For New Designs |
| 1N4007G | Taiwan Semiconductor Corporation | 1000 V | 1 A | 1.0 V | Standard Recovery >500ns | Not specified | 5 µA @ 1000 V | -55°C ~ 150°C | Active |
Engineering Selection Recommendations
Direct Substitutes (Identical Electrical Performance):
UF1007-T and UF4007GP-TP are direct electrical equivalents to the UF1M B0G. Both maintain fast recovery characteristics (≤ 500ns), 75 ns reverse recovery time, and identical voltage/current ratings. UF1007-T offers extended lower temperature operation (-65°C minimum). Both parts are Active product status with RoHS3 compliance and REACH unaffected status.
Compatible Alternatives (Different Recovery Speed):
The 1N4007 series parts (1N4007-E3/73, 1N4007-G, 1N4007-T, 1N4007E-E3/54, 1N4007E-E3/73, and 1N4007G) meet all voltage, current, and package requirements but operate with standard recovery characteristics (>500ns) rather than fast recovery. These parts feature lower forward voltage drops (1.0 V to 1.1 V versus 1.7 V) and are suitable for applications where recovery speed is not a critical design parameter. All listed 1N4007 variants are Active product status except 1N4007-T, which is Last Time Buy.
Obsolete and Restricted Status:
UF4008-G meets all electrical specifications but carries Obsolete product status and should not be selected for new designs. 1N4007FFG carries Not For New Designs status and exhibits higher reverse leakage current (10 µA versus 5 µA), making it unsuitable for new applications.
Compliance and Certification:
All recommended substitute parts maintain RoHS3 compliance and REACH unaffected status, consistent with the primary part. Moisture sensitivity level is 1 (Unlimited) across all parts, indicating no special handling requirements.
Frequently Asked Questions (FAQ)
Q: Can I substitute a 1N4007 series diode for the UF1M B0G?
A: Yes, 1N4007 series parts are electrically compatible substitutes. The primary difference is recovery speed: UF1M B0G operates with fast recovery (≤ 500ns, 75 ns trr), while 1N4007 parts use standard recovery (>500ns). The 1N4007 series also exhibits lower forward voltage drop (1.0-1.1 V versus 1.7 V). Substitution is valid when circuit design does not require fast recovery characteristics.
Q: What is the difference between fast recovery and standard recovery diodes?
A: Fast recovery diodes (≤ 500ns) have shorter reverse recovery time (75 ns for UF1M B0G), reducing switching losses in high-frequency applications. Standard recovery diodes (>500ns) are suitable for lower-frequency rectification circuits. The choice depends on application frequency and efficiency requirements.
Q: Are all substitute parts available in the same package?
A: All listed substitute parts are available in DO-204AL (DO-41) axial through-hole package, matching the primary part. Packaging format is consistent across all alternatives.
Q: Can I use 1N4007FFG as a substitute?
A: 1N4007FFG is not recommended for new designs due to its Not For New Designs product status. Additionally, it exhibits higher reverse leakage current (10 µA versus 5 µA at 1000 V), which may affect circuit performance in sensitive applications.
Q: What is the temperature operating range difference between UF1M B0G and UF1007-T?
A: UF1M B0G operates from -55°C to 150°C, while UF1007-T extends the lower temperature limit to -65°C. Both maintain the same 150°C upper limit. UF1007-T is suitable for applications requiring extended low-temperature operation.
Q: Are there any compliance differences between the main part and substitutes?
A: All listed substitute parts maintain identical RoHS3 compliance, REACH unaffected status, and moisture sensitivity level (MSL 1 - Unlimited). No compliance trade-offs exist when selecting from the recommended alternatives.
Q: Which substitute offers the best forward voltage performance?
A: The 1N4007-T variant offers the lowest forward voltage drop at 1.0 V @ 1 A, compared to 1.7 V for UF1M B0G. However, 1N4007-T carries Last Time Buy status. For Active product status with low forward voltage, 1N4007G offers 1.0 V @ 1 A performance.
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