Equivalent & Substitute Parts for U1C-E3/5AT

Part Overview

The U1C-E3/5AT is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This surface mount component operates at 150 V DC reverse voltage with 1 A average rectified current in a DO-214AC (SMA) package. The device is classified as Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified to support procurement flexibility, inventory management, and supply chain continuity. Alternative components must maintain electrical performance within the specified operating parameters while accommodating the same or compatible package configurations.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	150	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	920 mV @ 1 A	mV
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	ns
Reverse Recovery Time (trr)	24	ns
Current - Reverse Leakage @ Vr	5	µA @ 150 V
Mounting Type	Surface Mount	—
Package / Case	DO-214AC, SMA	—
Operating Temperature - Junction	-55 to 150	°C
Technology	Standard	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts are classified into two primary categories based on electrical and mechanical compatibility with the U1C-E3/5AT:

Parametric Equivalents (Vishay General Semiconductor - Diodes Division): Parts ES1C-E3/5AT, ES1C-E3/61T, and ES1CHE3_A/H maintain identical voltage and current ratings (150 V, 1 A) with matching forward voltage characteristics (920 mV @ 1 A). These components share the same DO-214AC (SMA) package and surface mount configuration. Reverse recovery time specifications range from 24 to 25 ns, supporting fast recovery operation. All three parts are Active status and RoHS3 compliant. The ES1CHE3_A/H variant includes AEC-Q101 automotive qualification.

Parametric Equivalents (Alternative Manufacturers): Parts ES1C-13-F (Diodes Incorporated) and ES1C (Taiwan Semiconductor Corporation) maintain the 150 V / 1 A electrical specification with 920 mV and 950 mV forward voltage respectively. Both support fast recovery operation and are housed in DO-214AC (SMA) packages. Reverse recovery times are 25 ns and 35 ns respectively.

Technology Variants: Parts STPS1150A (STMicroelectronics) and SBR1U150SA-13 (Diodes Incorporated) employ Schottky and Super Barrier technologies respectively, differing from the standard rectifier technology of the main part. These variants maintain 150 V / 1 A ratings but exhibit lower forward voltage (820 mV and 700 mV respectively), reducing power dissipation. SBR1U150SA-13 includes AEC-Q101 automotive qualification.

Extended Performance Variant: Part EGF1C (Fairchild Semiconductor) maintains 150 V / 1 A ratings with 1 V forward voltage and extended junction temperature range (-65 to 175°C). Reverse recovery time is 50 ns.

Substitution logic is based on matching voltage rating (150 V), current rating (1 A), package type (DO-214AC/SMA), mounting configuration (surface mount), and fast recovery speed classification (≤ 500 ns).

Parameter Comparison

Manufacturer Part Number	Manufacturer	Technology	Vr (Max) [V]	Io [A]	Vf (Max) @ 1A [mV]	trr [ns]	Ir @ Vr [µA]	Tj (Max) [°C]	Package	Status
U1C-E3/5AT	Vishay General Semiconductor	Standard	150	1	920	24	5	150	DO-214AC (SMA)	Active
ES1C-E3/5AT	Vishay General Semiconductor	Standard	150	1	920	25	5	150	DO-214AC (SMA)	Active
ES1C-E3/61T	Vishay General Semiconductor	Standard	150	1	920	25	5	150	DO-214AC (SMA)	Active
ES1CHE3_A/H	Vishay General Semiconductor	Standard	150	1	920	25	5	150	DO-214AC (SMA)	Active
ES1C-13-F	Diodes Incorporated	Standard	150	1	920	25	5	150	DO-214AC (SMA)	Active
ES1C	Taiwan Semiconductor Corporation	Standard	150	1	950	35	5	150	DO-214AC (SMA)	Active
STPS1150A	STMicroelectronics	Schottky	150	1	820	—	1	175	DO-214AC (SMA)	Active
SBR1U150SA-13	Diodes Incorporated	Super Barrier	150	1	700	—	100	150	DO-214AC (SMA)	Active
EGF1C	Fairchild Semiconductor	Standard	150	1	1000	50	10	175	DO-214AC (SMA)	Active

Engineering Selection Recommendations

Primary Substitutes (Vishay General Semiconductor): Parts ES1C-E3/5AT, ES1C-E3/61T, and ES1CHE3_A/H are direct parametric equivalents from the same manufacturer. These components are recommended for applications requiring minimal design verification. ES1CHE3_A/H includes AEC-Q101 automotive qualification and is suitable for automotive applications. All three maintain identical electrical specifications and package configuration to the U1C-E3/5AT.

Alternative Manufacturer Equivalents: Parts ES1C-13-F (Diodes Incorporated) and ES1C (Taiwan Semiconductor Corporation) provide parametric equivalence with different sourcing. Both maintain 150 V / 1 A ratings and DO-214AC (SMA) packaging. Forward voltage specifications remain within acceptable tolerance (920 mV and 950 mV respectively). These parts support supply chain diversification while maintaining electrical compatibility.

Technology Variant Selection: Part STPS1150A (Schottky technology) reduces forward voltage to 820 mV, resulting in lower power dissipation and improved efficiency in rectification circuits. This variant extends maximum junction temperature to 175°C. Part SBR1U150SA-13 (Super Barrier technology) achieves the lowest forward voltage at 700 mV with AEC-Q101 automotive qualification. Technology variants are suitable for applications where reduced forward voltage drop provides thermal or efficiency benefits.

Extended Temperature Variant: Part EGF1C extends maximum junction temperature to 175°C and supports operating range from -65°C to 175°C. This variant is applicable to high-temperature environments. Forward voltage is specified at 1000 mV with 50 ns reverse recovery time.

Compliance Considerations: All substitute parts maintain RoHS3 compliance and MSL 1 (unlimited) moisture sensitivity level, matching the U1C-E3/5AT specification. Parts ES1CHE3_A/H and SBR1U150SA-13 include AEC-Q101 automotive qualification for applications requiring automotive-grade components.

Frequently Asked Questions (FAQ)

Q: Can ES1C-E3/5AT be used as a direct replacement for U1C-E3/5AT?

A: Yes. ES1C-E3/5AT is a parametric equivalent manufactured by Vishay General Semiconductor with identical voltage rating (150 V), current rating (1 A), forward voltage (920 mV @ 1 A), and package configuration (DO-214AC/SMA). Reverse recovery time differs by 1 ns (25 ns vs. 24 ns), which is within standard manufacturing tolerance for fast recovery diodes.

Q: What is the difference between standard rectifier and Schottky technology variants?

A: Standard rectifier diodes (U1C-E3/5AT, ES1C-E3/5AT, ES1C-E3/61T, ES1CHE3_A/H, ES1C-13-F, ES1C, EGF1C) employ p-n junction technology with forward voltage typically 900–1000 mV. Schottky diodes (STPS1150A) use metal-semiconductor junctions with lower forward voltage (820 mV), reducing power dissipation. Super Barrier diodes (SBR1U150SA-13) achieve the lowest forward voltage (700 mV) through advanced barrier engineering. All three technologies maintain 150 V / 1 A ratings and DO-214AC (SMA) packaging.

Q: Are all substitute parts available in the same packaging?

A: All substitute parts are housed in DO-214AC (SMA) surface mount packages, matching the U1C-E3/5AT configuration. Packaging variants (Tape & Reel, Cut Tape, Bulk) differ by supplier but do not affect electrical or mechanical compatibility. Component selection should verify packaging format availability for procurement requirements.

Q: Which substitute part is recommended for automotive applications?

A: Parts ES1CHE3_A/H and SBR1U150SA-13 include AEC-Q101 automotive qualification. ES1CHE3_A/H maintains standard rectifier technology with 920 mV forward voltage, while SBR1U150SA-13 employs Super Barrier technology with 700 mV forward voltage. Selection depends on thermal and efficiency requirements specific to the automotive application.

Q: What is the impact of reverse recovery time differences among substitute parts?

A: Reverse recovery time (trr) ranges from 24 ns (U1C-E3/5AT) to 50 ns (EGF1C) across the substitute list. All parts are classified as fast recovery (≤ 500 ns) and suitable for high-frequency switching applications. Shorter reverse recovery time reduces switching losses and electromagnetic interference. Applications operating above 100 kHz should prioritize parts with trr ≤ 25 ns.

Q: Can STPS1150A or SBR1U150SA-13 be used in place of U1C-E3/5AT?

A: Yes, with design consideration. Both parts maintain 150 V / 1 A electrical ratings and DO-214AC (SMA) packaging. STPS1150A (Schottky) and SBR1U150SA-13 (Super Barrier) exhibit lower forward voltage (820 mV and 700 mV respectively) compared to the standard rectifier (920 mV). Lower forward voltage reduces power dissipation and heat generation. Applications sensitive to forward voltage characteristics should evaluate thermal and efficiency impacts before substitution.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts are RoHS3 compliant and carry MSL 1 (unlimited) moisture sensitivity level, matching U1C-E3/5AT specifications. Parts ES1CHE3_A/H and SBR1U150SA-13 include additional AEC-Q101 automotive qualification. REACH status is unaffected for all parts. ECCN classification is EAR99 and HTSUS code is 8541.10.0080 across all components.

Q: Is reverse leakage current a critical parameter for substitution?

A: Reverse leakage current (Ir) ranges from 1 µA to 100 µA across the substitute list. The U1C-E3/5AT specifies 5 µA @ 150 V. Parts with higher leakage current (EGF1C at 10 µA, SBR1U150SA-13 at 100 µA) may increase standby power consumption in applications with sustained reverse bias. Applications with stringent leakage requirements should select parts with Ir ≤ 5 µA.

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