TTC012(Q) Equivalent & Substitute Parts

Part Overview

The TTC012(Q) is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage, rated for 375 V collector-emitter breakdown voltage and 2 A maximum collector current in a Through Hole PW-MOLD2 package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. The 1.1 W power rating and TO-251-3 package configuration establish the baseline for functional equivalency assessment.

Substiute Parts

TTC012(Q)

Toshiba Semiconductor and StorageIn Stock: 901TTC012(Q) Datasheet

Current PartRFQ

2SC6142(Q)

Toshiba Semiconductor and StorageIn Stock: 8872SC6142(Q) Datasheet

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BULD118D-1

STMicroelectronicsIn Stock: 3759BULD118D-1 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the TTC012(Q) is determined by the following critical parameters:

Primary Substitution Criteria:

• Transistor Type: NPN configuration required
• Voltage Rating: Collector-emitter breakdown voltage must equal or exceed 375 V
• Current Rating: Maximum collector current must equal or exceed 2 A
• Package Type: Through Hole TO-251-3 (IPak) configuration
• Power Dissipation: Maximum power rating must support 1.1 W operation
• Mounting Compatibility: Pin configuration and lead geometry must accommodate existing PCB layouts

Secondary Compatibility Factors:

• Operating temperature range: 150°C maximum junction temperature
• RoHS compliance status for regulatory alignment
• Moisture sensitivity level and environmental ratings

The substitute parts identified below satisfy these criteria within the specified electrical and mechanical parameters.

Parameter Comparison

Engineering Selection Recommendations

2SC6142(Q) - Toshiba Semiconductor and Storage

The 2SC6142(Q) is an active product from the same manufacturer as the TTC012(Q), providing design continuity and supply chain reliability. This device maintains identical voltage and power ratings (375 V, 1.1 W) and supports the same 150°C operating temperature. The maximum collector current is reduced to 1.5 A, which represents a limitation compared to the 2 A specification of the TTC012(Q). This substitute is suitable for applications where collector current does not exceed 1.5 A. The TO-251-3 IPak package with stub leads provides mechanical compatibility with existing through-hole PCB designs, though lead geometry differs slightly from the short-lead variant of the main part.

BULD118D-1 - STMicroelectronics

The BULD118D-1 is an active product offering superior electrical performance characteristics. This device exceeds the voltage specification (400 V versus 375 V) and matches the 2 A collector current rating of the TTC012(Q). The power dissipation capability is significantly higher at 20 W, providing thermal margin for demanding applications. The TO-251-3 short-lead IPak package matches the mechanical configuration of the TTC012(Q). This substitute is suitable for applications requiring full 2 A current capability and enhanced thermal performance. ROHS3 compliance status aligns with current regulatory requirements. The DC current gain specification (10 @ 500mA, 5V) is substantially lower than the TTC012(Q) (100 @ 300mA, 5V), which may affect circuit biasing requirements in gain-dependent applications.

Frequently Asked Questions (FAQ)

Q: Can the 2SC6142(Q) directly replace the TTC012(Q) in all applications?

A: The 2SC6142(Q) is suitable for applications where the maximum collector current requirement does not exceed 1.5 A. If the circuit design requires the full 2 A capability of the TTC012(Q), the 2SC6142(Q) is not appropriate. Voltage and power ratings are equivalent.

Q: What are the lead geometry differences between the TTC012(Q) and 2SC6142(Q)?

A: The TTC012(Q) features TO-251-3 short leads, while the 2SC6142(Q) features TO-251-3 stub leads. Both are TO-251-3 (IPak) configurations and mount in through-hole PCB designs. Stub leads are shorter than short leads, which may affect PCB layout compatibility depending on hole spacing and component clearance requirements.

Q: Is the BULD118D-1 suitable for high-power applications?

A: The BULD118D-1 supports 20 W maximum power dissipation, compared to 1.1 W for the TTC012(Q). This higher rating provides thermal margin and is suitable for applications requiring sustained power dissipation. However, circuit design must account for the lower DC current gain (10 versus 100) when establishing biasing networks.

Q: Are there RoHS compliance differences between the substitute parts?

A: The TTC012(Q) is RoHS Compliant. The BULD118D-1 is ROHS3 Compliant, which represents current regulatory alignment. The 2SC6142(Q) RoHS status is not specified in the provided data. For applications requiring documented RoHS compliance, the BULD118D-1 provides explicit ROHS3 certification.

Q: What is the significance of the DC current gain (hFE) differences?

A: The TTC012(Q) specifies hFE (Min) of 100 @ 300mA, 5V. The BULD118D-1 specifies hFE (Min) of 10 @ 500mA, 5V. Lower current gain requires higher base current to achieve saturation, affecting biasing resistor calculations and circuit design. The 2SC6142(Q) maintains hFE of 100, matching the original specification.

Q: Can the BULD118D-1 be used in circuits designed for 1.1 W power dissipation?

A: Yes. The BULD118D-1 supports 20 W maximum power dissipation, which exceeds the 1.1 W requirement. The device operates within specification at lower power levels. Circuit thermal design must account for the actual power dissipation in the application, not the maximum rating.

Q: What is the collector cutoff current (ICBO) significance for substitution?

A: The TTC012(Q) specifies ICBO of 10 µA, the 2SC6142(Q) specifies 50 µA, and the BULD118D-1 specifies 250 µA. Higher cutoff current indicates greater leakage at the collector-base junction. For applications sensitive to leakage current (such as precision analog circuits), the TTC012(Q) and 2SC6142(Q) are preferable. The BULD118D-1 is suitable for general switching applications where leakage is not a limiting factor.