TSM950N10CW Equivalent & Substitute Parts

Part Overview

The TSM950N10CW is an N-Channel MOSFET manufactured by Taiwan Semiconductor Corporation, designed for surface mount applications in the SOT-223 package. This device operates at 100V drain-to-source voltage with a continuous drain current rating of 6.5A and maximum power dissipation of 9W. The component is classified as Active product status and maintains full RoHS3 compliance.

Substitute parts are identified when electronic components become unavailable, reach end-of-life status, or when supply chain constraints necessitate alternative sourcing. The TSM950N10CW maintains consistent electrical and mechanical specifications across its substitute variants, ensuring direct functional replacement without circuit redesign.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	6.5	A (Tc)
On-State Resistance (Rds On Max) @ 5A, 10V	95	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	2.5	V
Gate Charge (Qg Max) @ 10V	9.3	nC
Input Capacitance (Ciss Max) @ 50V	1480	pF
Maximum Gate Voltage (Vgs Max)	±20	V
Power Dissipation (Max)	9	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-223	Surface Mount
Packaging Format	Tape & Reel (TR)	—

Substitute Part Grouping Explanation

Substitution of the TSM950N10CW is determined by electrical parameter equivalence and mechanical compatibility. The substitute part TSM950N10CW RPG is classified as a parametric equivalent based on the following criteria:

Electrical Parameter Matching:

Drain-to-source voltage (Vdss): 100V
Continuous drain current (Id @ 25°C): 6.5A
On-state resistance (Rds On): 95mOhm @ 5A, 10V
Gate threshold voltage (Vgs(th)): 2.5V @ 250µA
Gate charge (Qg): 9.3 nC @ 10V
Input capacitance (Ciss): 1480 pF @ 50V
Maximum gate voltage (Vgs): ±20V
Power dissipation: 9W

Mechanical Compatibility:

Package type: SOT-223 (TO-261-4, TO-261AA)
Mounting type: Surface Mount
Packaging format: Tape & Reel (TR)

Regulatory Compliance:

RoHS3 Compliant
REACH Unaffected
ECCN: EAR99

The substitute part maintains identical electrical performance and physical form factor, enabling direct replacement in existing circuit designs without modification to PCB layout or component footprint.

Parameter Comparison

Parameter	TSM950N10CW	TSM950N10CW RPG	Match Status
Manufacturer	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Identical
FET Type	N-Channel	N-Channel	Identical
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Identical
Vdss	100 V	100 V	Identical
Id @ 25°C	6.5A (Tc)	6.5A (Tc)	Identical
Rds On (Max) @ 5A, 10V	95 mOhm	95 mOhm	Identical
Vgs(th) (Max) @ 250µA	2.5 V	2.5 V	Identical
Qg (Max) @ 10V	9.3 nC	9.3 nC	Identical
Ciss (Max) @ 50V	1480 pF	1480 pF	Identical
Vgs (Max)	±20 V	±20 V	Identical
Power Dissipation (Max)	9 W (Tc)	9 W (Tc)	Identical
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	Identical
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	Identical
Mounting Type	Surface Mount	Surface Mount	Identical
Packaging	Tape & Reel (TR)	Tape & Reel (TR)	Identical
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Identical
REACH Status	REACH Unaffected	REACH Unaffected	Identical
Product Status	Active	Active	Identical

Engineering Selection Recommendations

Both the TSM950N10CW and TSM950N10CW RPG are Active products manufactured by Taiwan Semiconductor Corporation with full RoHS3 compliance and REACH Unaffected status. Selection between these parts is based on supply availability and inventory requirements rather than electrical or mechanical differentiation.

The TSM950N10CW RPG variant maintains significantly higher inventory availability (15,700 pieces) compared to the standard TSM950N10CW (946 pieces), making it the preferred selection for high-volume production runs and extended supply chain planning.

Both parts are suitable for applications requiring 100V rated MOSFETs with 6.5A continuous drain current in surface mount SOT-223 packages. The identical electrical specifications, thermal characteristics, and regulatory compliance ensure functional interchangeability without circuit modification or performance degradation.

Frequently Asked Questions (FAQ)

Q: Can TSM950N10CW RPG be used as a direct replacement for TSM950N10CW?

A: Yes. Both parts are manufactured by Taiwan Semiconductor Corporation with identical electrical parameters, thermal ratings, and package specifications. Direct substitution is supported without PCB layout changes or circuit redesign.

Q: What are the key electrical parameters that define substitution compatibility?

A: Substitution compatibility is determined by matching drain-to-source voltage (100V), continuous drain current (6.5A @ 25°C), on-state resistance (95mOhm @ 5A, 10V), gate threshold voltage (2.5V @ 250µA), and power dissipation rating (9W). All parameters are identical between the main part and substitute.

Q: Are there differences in package or mounting specifications?

A: No. Both parts use the SOT-223 package (TO-261-4, TO-261AA) with surface mount technology and Tape & Reel packaging format. PCB footprints and assembly processes remain unchanged.

Q: What is the difference between TSM950N10CW and TSM950N10CW RPG?

A: The RPG designation indicates a different tape and reel configuration or manufacturing batch code. Electrical and mechanical specifications are identical. The RPG variant has higher inventory availability.

Q: Are both parts RoHS3 compliant?

A: Yes. Both TSM950N10CW and TSM950N10CW RPG are RoHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements.

Q: What is the operating temperature range for these MOSFETs?

A: Both parts operate across -55°C to 150°C junction temperature (TJ), supporting applications in industrial, automotive, and consumer electronics environments.

Q: Can these parts be used interchangeably in existing designs?

A: Yes. Identical electrical parameters, thermal characteristics, package specifications, and regulatory compliance enable direct interchangeability without design modification or performance impact.

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