TSM9435CS P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The TSM9435CS is an active P-Channel MOSFET manufactured by Taiwan Semiconductor Corporation, rated for 30V drain-to-source voltage with 5.3A continuous drain current. The device is housed in an 8-SOP surface mount package and is designed for applications requiring moderate power dissipation up to 2.5W. This part is ROHS3 compliant and REACH unaffected, making it suitable for regulated industrial and consumer applications.

Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and operational parameters. Alternative devices serve applications where the primary part is unavailable, supply constraints exist, or design flexibility permits component selection from multiple qualified manufacturers.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	5.3	A
On-Resistance (Rds On Max) @ Id, Vgs	60 mOhm @ 5.3A, 10V	—
Gate Threshold Voltage (Vgs(th) Max)	3	V @ 250µA
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the TSM9435CS is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id): 5.3A or greater at 25°C
On-Resistance (Rds On): 60 mOhm or lower at rated current and gate voltage
Gate Threshold Voltage (Vgs(th)): 3V or lower for compatible drive circuits
Power Dissipation: 2.5W or greater
Package: 8-SOIC surface mount configuration
Operating Temperature: -55°C to 150°C minimum range
Compliance: ROHS3 and REACH unaffected status

The IRF9335TRPBF from Infineon Technologies meets all substitution criteria with equivalent or superior electrical performance and identical package specifications.

Parameter Comparison

Parameter	TSM9435CS	IRF9335TRPBF	Match Status
Manufacturer	Taiwan Semiconductor Corporation	Infineon Technologies	Different
FET Type	P-Channel	P-Channel	Equivalent
Drain to Source Voltage (Vdss)	30 V	30 V	Equivalent
Continuous Drain Current (Id) @ 25°C	5.3 A (Tc)	5.4 A (Ta)	Equivalent
Rds On (Max) @ Id, Vgs	60 mOhm @ 5.3A, 10V	59 mOhm @ 5.4A, 10V	Equivalent
Gate Threshold Voltage (Vgs(th) Max)	3 V @ 250µA	2.4 V @ 10µA	Equivalent
Vgs (Max)	±20 V	±20 V	Equivalent
Power Dissipation (Max)	2.5 W (Tc)	2.5 W (Ta)	Equivalent
Operating Temperature Range	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	Equivalent
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	Equivalent
Mounting Type	Surface Mount	Surface Mount	Equivalent
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Equivalent
REACH Status	REACH Unaffected	REACH Unaffected	Equivalent
Product Status	Active	Active	Equivalent

Engineering Selection Recommendations

TSM9435CS (Primary Part)

Manufacturer: Taiwan Semiconductor Corporation
Product Status: Active
Compliance: ROHS3 Compliant, REACH Unaffected
Packaging: Tape & Reel (TR)
Current Inventory: 1580 Pcs

IRF9335TRPBF (Substitute Part)

Manufacturer: Infineon Technologies (HEXFET® series)
Product Status: Active
Compliance: ROHS3 Compliant, REACH Unaffected
Packaging: Cut Tape (CT) & Digi-Reel®
Moisture Sensitivity Level: 1 (Unlimited)
Current Inventory: 21100 Pcs

Both parts are active products with full regulatory compliance. The IRF9335TRPBF provides superior gate charge performance (14 nC vs. 9.52 nC) and lower input capacitance (386 pF vs. 551.57 pF), resulting in faster switching characteristics. The IRF9335TRPBF is suitable for direct substitution in applications where the TSM9435CS is specified, provided that printed circuit board layout accommodates the identical 8-SOIC package footprint.

Frequently Asked Questions (FAQ)

Q: Can the IRF9335TRPBF replace the TSM9435CS in existing designs?

A: Yes. Both devices share identical electrical ratings for Vdss (30V), continuous drain current (5.3A/5.4A), on-resistance (60/59 mOhm), power dissipation (2.5W), and operating temperature range (-55°C to 150°C). The 8-SOIC package footprint is identical. No circuit modifications are required.

Q: What are the differences in gate charge between these parts?

A: The TSM9435CS specifies 9.52 nC gate charge at 10V, while the IRF9335TRPBF specifies 14 nC at 10V. This difference affects gate drive circuit design but does not prevent substitution. Higher gate charge requires proportionally longer switching times but remains within acceptable limits for standard gate driver circuits.

Q: Are there packaging differences between these parts?

A: Both parts use 8-SOIC (0.154", 3.90mm Width) surface mount packages. The TSM9435CS is supplied in Tape & Reel (TR) format, while the IRF9335TRPBF is supplied in Cut Tape (CT) and Digi-Reel® formats. Package footprints are identical for PCB assembly.

Q: What is the significance of the gate threshold voltage difference?

A: The TSM9435CS specifies Vgs(th) at 3V @ 250µA, while the IRF9335TRPBF specifies 2.4V @ 10µA. Both values indicate the gate voltage required to initiate conduction. The lower threshold voltage of the IRF9335TRPBF permits operation with lower gate drive voltages but does not affect compatibility in circuits designed for either specification.

Q: Are both parts compliant with current regulatory standards?

A: Yes. Both the TSM9435CS and IRF9335TRPBF are ROHS3 compliant and REACH unaffected. Both carry active product status from their respective manufacturers.

Q: What is the input capacitance difference, and does it matter?

A: The TSM9435CS specifies 551.57 pF input capacitance at 15V, while the IRF9335TRPBF specifies 386 pF at 25V. Lower input capacitance in the IRF9335TRPBF results in faster switching response and reduced gate drive power requirements. This represents an improvement over the primary part.

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