TSM8N50CP ROG MOSFET N-Channel 500V 7.2A Equivalent & Substitute Parts

Part Overview

The TSM8N50CP ROG is an N-Channel MOSFET manufactured by Taiwan Semiconductor Corporation, rated for 500V drain-to-source voltage with 7.2A continuous drain current at 25°C. The device is housed in a TO-252 (DPAK) surface mount package and dissipates up to 89W at the case temperature. This part is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement requirements.

Substiute Parts

TSM8N50CP ROG

Taiwan Semiconductor CorporationIn Stock: 997TSM8N50CP ROG Datasheet

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IPD60R950C6ATMA1

Infineon TechnologiesIn Stock: 480177IPD60R950C6ATMA1 Datasheet

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SIHD7N60E-GE3

Vishay SiliconixIn Stock: 1449SIHD7N60E-GE3 Datasheet

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SPD04N50C3ATMA1

Infineon TechnologiesIn Stock: 250454SPD04N50C3ATMA1 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the TSM8N50CP ROG is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• FET Type: N-Channel topology
• Drain to Source Voltage (Vdss): Minimum 500V rating required
• Continuous Drain Current (Id): Minimum 7.2A at 25°C required
• On-State Resistance (Rds On): Maximum 850mOhm at specified conditions
• Power Dissipation: Minimum 89W capability
• Package: TO-252-3 (DPAK) surface mount form factor
• Operating Temperature: -55°C to 150°C range
• Compliance: RoHS3 compliant

Substitute parts must satisfy all primary criteria to ensure functional equivalence in existing circuit designs. Parts exceeding these specifications in voltage rating or current capacity are acceptable provided they maintain electrical compatibility and identical package geometry.

Parameter Comparison

Engineering Selection Recommendations

SIHD7N60E-GE3 (Vishay Siliconix)

The SIHD7N60E-GE3 is the primary substitute for the TSM8N50CP ROG. This device maintains active product status and meets all functional requirements: N-Channel topology, 600V Vdss rating (exceeds 500V requirement), 7.0A continuous drain current (meets 7.2A requirement), and 78W power dissipation (meets 89W requirement). The 600mOhm on-state resistance at 3.5A, 10V provides superior performance compared to the original 850mOhm specification. The device is housed in DPAK package geometry and operates across the identical -55°C to 150°C temperature range. RoHS3 compliance and unlimited moisture sensitivity level (MSL 1) ensure regulatory and manufacturing compatibility.

SPD04N50C3ATMA1 (Infineon Technologies)

The SPD04N50C3ATMA1 provides a secondary substitute option with matching 500V Vdss rating. This CoolMOS™ device delivers 4.5A continuous drain current and 50W power dissipation, both below the original specifications. The part is classified as "Not For New Designs," limiting its suitability to legacy system maintenance and repair applications. RoHS3 compliance and TO-252-3 package compatibility are maintained.

IPD60R950C6ATMA1 (Infineon Technologies)

The IPD60R950C6ATMA1 is not recommended as a direct substitute. Although it features active product status and 600V Vdss rating, the 4.4A continuous drain current and 37W power dissipation fall significantly below the original 7.2A and 89W specifications. This device is suitable only for applications with reduced current and thermal requirements.

Frequently Asked Questions (FAQ)

Q: Can the SIHD7N60E-GE3 directly replace the TSM8N50CP ROG in existing designs?

A: Yes. The SIHD7N60E-GE3 meets all primary substitution criteria: N-Channel topology, 600V Vdss (exceeds 500V requirement), 7.0A continuous drain current (meets 7.2A requirement), 78W power dissipation (meets 89W requirement), identical TO-252-3 DPAK package, and -55°C to 150°C operating temperature range. No circuit modifications are required.

Q: Why does the IPD60R950C6ATMA1 have a higher voltage rating but lower current rating?

A: Voltage and current ratings are independent design parameters. The IPD60R950C6ATMA1 is optimized for 600V applications with lower current requirements. Its 4.4A rating is insufficient for circuits requiring the original 7.2A specification.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts—SIHD7N60E-GE3, SPD04N50C3ATMA1, and IPD60R950C6ATMA1—are RoHS3 compliant and REACH unaffected, matching the original TSM8N50CP ROG compliance status.

Q: What is the significance of the "Not For New Designs" status for SPD04N50C3ATMA1?

A: This designation indicates the manufacturer does not recommend the part for new circuit designs. The SPD04N50C3ATMA1 is suitable for sustaining existing products and repair applications only. For new designs, the SIHD7N60E-GE3 (active status) is the preferred choice.

Q: Do all substitute parts use the same package footprint?

A: Yes. All substitute parts use TO-252-3 DPAK (2 Leads + Tab) package geometry, designated as SC-63. PCB footprints and mounting procedures are identical to the original TSM8N50CP ROG.

Q: How do on-state resistance values affect circuit performance?

A: On-state resistance (Rds On) directly determines conduction losses and heat generation. The SIHD7N60E-GE3 exhibits 600mOhm Rds On compared to the original 850mOhm, resulting in lower power dissipation and improved efficiency. The SPD04N50C3ATMA1 and IPD60R950C6ATMA1 both specify 950mOhm Rds On, increasing conduction losses relative to the original device.

Q: What is the moisture sensitivity level (MSL) and why is it important?

A: MSL 1 (Unlimited) indicates the component has no moisture sensitivity restrictions during storage and handling. All listed parts maintain MSL 1 classification, ensuring compatibility with standard manufacturing and storage procedures without special precautions.