TSM80N1R2CP ROG N-Channel 800V 5.5A MOSFET Equivalent & Substitute Parts

Part Overview

The TSM80N1R2CP ROG is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 800V drain-to-source voltage with 5.5A continuous drain current at 25°C. This device is packaged in a Surface Mount TO-252 (DPAK) configuration and is designed for high-voltage switching applications. The main part number TSM80N1R2CP ROG is classified as Obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement. Active equivalent and substitute parts are available from both Taiwan Semiconductor Corporation and Infineon Technologies that maintain electrical and mechanical compatibility within specified parameter tolerances.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	5.5	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	1.2	Ohm @ 2.75A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	19.4	nC @ 10V
Power Dissipation (Max)	110	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	TO-252 (DPAK)
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the TSM80N1R2CP ROG is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

Drain to Source Voltage (Vdss): 800V minimum
Continuous Drain Current (Id): 5.5A or greater at 25°C
On-State Resistance (Rds On): 1.2 Ohm or lower at specified gate voltage
Gate Threshold Voltage (Vgs(th)): 4V or lower
Power Dissipation: 110W or greater
Operating Temperature Range: -55°C to 150°C minimum

Mechanical Equivalence Criteria:

Mounting Type: Surface Mount
Package / Case: TO-252-3 (DPAK) configuration
Lead configuration: 2 Leads + Tab (SC-63)

Compliance Criteria:

RoHS3 Compliance required
REACH Unaffected status required
ECCN: EAR99 classification

Substitute parts are grouped into two categories: Parametric Equivalent (identical electrical specifications from the same manufacturer) and Similar Manufacturer Parts (alternative manufacturers with comparable but not identical electrical characteristics within acceptable operating ranges).

Parameter Comparison

Parameter	TSM80N1R2CP ROG (Main)	TSM80N1R2CP (Equivalent)	SPD04N80C3ATMA1	SPD06N80C3ATMA1
Manufacturer	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Infineon Technologies	Infineon Technologies
Vdss (V)	800	800	800	800
Id @ 25°C (A)	5.5 (Tc)	5.5 (Tc)	4 (Tc)	6 (Ta)
Rds On Max (Ohm)	1.2 @ 2.75A, 10V	1.2 @ 2.75A, 10V	1.3 @ 2.5A, 10V	0.9 @ 3.8A, 10V
Vgs(th) Max (V)	4 @ 250µA	4 @ 250µA	3.9 @ 240µA	3.9 @ 250µA
Gate Charge Qg Max (nC)	19.4 @ 10V	19.4 @ 10V	31 @ 10V	41 @ 10V
Vgs Max (V)	±30	±30	±20	±20
Ciss Max (pF)	685 @ 100V	685 @ 100V	570 @ 100V	785 @ 100V
Power Dissipation Max (W)	110 (Tc)	110 (Tc)	63 (Tc)	83 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Product Status	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

Parametric Equivalent Selection:

The TSM80N1R2CP (without ROG suffix) from Taiwan Semiconductor Corporation is the direct parametric equivalent to the obsolete TSM80N1R2CP ROG. This part maintains identical electrical specifications across all critical parameters including Vdss, Id, Rds On, gate charge, and power dissipation. The equivalent part carries Active product status, ensuring long-term availability and supply chain continuity. Both parts are ROHS3 Compliant and REACH Unaffected, maintaining full regulatory compliance. This part is the primary recommendation for direct replacement in existing designs.

Similar Manufacturer Part Selection:

The Infineon Technologies SPD04N80C3ATMA1 and SPD06N80C3ATMA1 are similar manufacturer alternatives from the CoolMOS™ series. Both parts share the 800V Vdss rating and TO-252-3 package configuration. The SPD06N80C3ATMA1 provides superior continuous drain current (6A) and lower on-state resistance (0.9 Ohm), making it suitable for applications requiring higher current capacity. The SPD04N80C3ATMA1 provides 4A continuous drain current with slightly higher on-state resistance (1.3 Ohm), suitable for lower current applications. Both Infineon parts carry Active product status and full compliance certifications. Selection between these alternatives depends on specific application current requirements and thermal management capabilities.

Compliance and Regulatory Considerations:

All recommended substitute parts maintain ROHS3 Compliance and REACH Unaffected status, ensuring compatibility with current environmental and regulatory requirements. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095, maintaining consistent export and tariff classification.

Frequently Asked Questions (FAQ)

Q: Can the TSM80N1R2CP (Active) be used as a direct replacement for the TSM80N1R2CP ROG (Obsolete)?

A: Yes. The TSM80N1R2CP is a parametric equivalent with identical electrical specifications. The only difference is product status (Active versus Obsolete). All electrical parameters, package configuration, and compliance certifications are identical, enabling direct substitution without circuit modification.

Q: What are the key differences between the Taiwan Semiconductor Corporation TSM80N1R2CP and the Infineon Technologies SPD06N80C3ATMA1?

A: The primary differences are continuous drain current (5.5A versus 6A), on-state resistance (1.2 Ohm versus 0.9 Ohm), gate charge (19.4 nC versus 41 nC), and maximum gate voltage (±30V versus ±20V). The SPD06N80C3ATMA1 offers lower on-state resistance and higher current capacity, resulting in lower power dissipation in high-current applications. The TSM80N1R2CP maintains lower gate charge, reducing driver circuit complexity.

Q: Is the SPD04N80C3ATMA1 suitable for applications requiring 5.5A continuous drain current?

A: No. The SPD04N80C3ATMA1 is rated for 4A continuous drain current at 25°C, which is below the 5.5A requirement of the main part. This part is suitable only for applications with maximum continuous drain current of 4A or lower.

Q: Are all substitute parts available in the same TO-252 (DPAK) package?

A: Yes. All recommended substitute parts use the TO-252-3 (DPAK) package configuration with 2 Leads + Tab (SC-63), enabling direct mechanical compatibility on existing printed circuit boards without layout modification.

Q: What is the impact of higher gate charge in the Infineon CoolMOS™ parts?

A: Higher gate charge (31 nC for SPD04N80C3ATMA1 and 41 nC for SPD06N80C3ATMA1 versus 19.4 nC for TSM80N1R2CP) requires increased driver circuit current capability and may increase switching losses in high-frequency applications. Circuit design verification is necessary when substituting to ensure gate driver performance remains adequate.

Q: Do all substitute parts meet the same temperature operating range?

A: Yes. All substitute parts operate across the -55°C to 150°C temperature range, maintaining thermal compatibility with the original TSM80N1R2CP ROG specification.

Q: What packaging options are available for these substitute parts?

A: The TSM80N1R2CP is available in Tape & Reel (TR) packaging. The SPD04N80C3ATMA1 is available in Tape & Reel (TR) packaging. The SPD06N80C3ATMA1 is available in Cut Tape (CT) and Digi-Reel® packaging. Packaging selection depends on procurement and assembly requirements.

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