TSM7P06CP P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The TSM7P06CP is an active P-Channel MOSFET manufactured by Taiwan Semiconductor Corporation, designed for surface mount applications in the TO-252 (DPAK) package. This device operates at -60V drain-to-source voltage with a continuous drain current rating of 7A at 25°C and maximum power dissipation of 15.6W. The part is ROHS3 compliant and REACH unaffected, making it suitable for modern electronic applications requiring environmental compliance. Equivalent and substitute parts are identified based on matching or exceeding electrical performance parameters within the same package family, enabling direct or near-direct circuit board replacement when inventory constraints or design optimization require alternative sourcing.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	7	A
Rds On (Max) @ Id, Vgs	180 mOhm @ 3A, 10V	—
Vgs(th) (Max) @ Id	2.5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.2	nC @ 10V
Power Dissipation (Max)	15.6	W
Operating Temperature (TJ)	150	°C
Package Type	TO-252 (DPAK)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the TSM7P06CP are classified into two categories based on parametric equivalence and similarity:

Parametric Equivalent: TSM7P06CP ROG matches all critical electrical specifications of the main part, including Vdss (60V), Id (7A), Rds On (180 mOhm @ 3A, 10V), Vgs(th) (2.5V @ 250µA), and power dissipation (15.6W). This part is manufactured by the same supplier (Taiwan Semiconductor Corporation) and uses identical packaging (TO-252 DPAK). The only distinction is the reel designation (ROG variant), which does not affect electrical performance or circuit compatibility. This part qualifies as a direct parametric equivalent.

Similar Manufacturer Part: STD10P6F6 is manufactured by STMicroelectronics and shares the same package type (TO-252 DPAK) and voltage rating (60V Vdss). However, this part exceeds the main part specifications in continuous drain current (10A versus 7A), power dissipation (35W versus 15.6W), and operating temperature (175°C versus 150°C). The Rds On is lower (160 mOhm @ 5A, 10V), and gate charge is reduced (6.4 nC @ 10V). These enhancements make STD10P6F6 suitable for applications requiring higher current capacity or thermal performance, though it is not a direct one-to-one replacement in all circuit topologies.

Substitution eligibility is determined by the following key parameters: Vdss rating, continuous drain current capability, Rds On characteristics, package compatibility, and thermal specifications. All identified substitutes maintain P-Channel MOSFET technology and surface mount DPAK packaging.

Parameter Comparison

Parameter	TSM7P06CP	TSM7P06CP ROG	STD10P6F6
Manufacturer	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	STMicroelectronics
FET Type	P-Channel	P-Channel	P-Channel
Vdss (V)	60	60	60
Id @ 25°C (A)	7	7	10
Rds On (Max) @ Id, Vgs	180 mOhm @ 3A, 10V	180 mOhm @ 3A, 10V	160 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	2.5V @ 250µA	4V @ 250µA
Gate Charge (Qg) @ 10V (nC)	8.2	8.2	6.4
Power Dissipation (Max) (W)	15.6	15.6	35
Operating Temperature (TJ) (°C)	150	150	175
Package	TO-252 (DPAK)	TO-252 (DPAK)	TO-252 (DPAK)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Vgs (Max)	±20V	±20V	±20V

Engineering Selection Recommendations

TSM7P06CP ROG is the primary equivalent substitute for the TSM7P06CP. Both parts are manufactured by Taiwan Semiconductor Corporation, share identical electrical specifications, and are packaged in TO-252 (DPAK). The ROG designation indicates a different reel configuration but does not alter device performance. Both parts are ROHS3 compliant and REACH unaffected. This substitute is suitable for direct replacement in existing designs without circuit modification.

STD10P6F6 is a performance-enhanced alternative manufactured by STMicroelectronics. This part is appropriate for applications where higher continuous drain current (10A), increased power dissipation capability (35W), or extended operating temperature range (175°C) provide design advantages. The lower Rds On and reduced gate charge improve switching efficiency and reduce drive requirements. STD10P6F6 is also ROHS3 compliant and REACH unaffected. However, the higher Vgs(th) (4V versus 2.5V) may require gate drive circuit adjustment in applications with marginal drive voltage. This part is suitable for designs requiring enhanced thermal or current performance within the same package footprint.

Both substitutes maintain full compatibility with TO-252 (DPAK) surface mount assembly processes and printed circuit board layouts designed for the TSM7P06CP.

Frequently Asked Questions (FAQ)

Q: Can TSM7P06CP ROG be used as a direct replacement for TSM7P06CP?

A: Yes. TSM7P06CP ROG is a parametric equivalent with identical electrical specifications, voltage rating, current rating, and power dissipation. The ROG designation refers to reel packaging only and does not affect device performance or circuit compatibility. Direct substitution is supported without circuit modification.

Q: Is STD10P6F6 a direct replacement for TSM7P06CP?

A: STD10P6F6 is a compatible alternative, not a direct one-to-one replacement. While both devices share the same 60V Vdss rating and TO-252 (DPAK) package, STD10P6F6 exceeds TSM7P06CP specifications in continuous drain current (10A versus 7A), power dissipation (35W versus 15.6W), and operating temperature (175°C versus 150°C). The higher Vgs(th) (4V versus 2.5V) may require gate drive circuit evaluation. STD10P6F6 is suitable for applications requiring enhanced performance but should be selected based on specific circuit requirements.

Q: What are the key parameters that determine substitution eligibility?

A: Substitution eligibility is determined by: (1) Drain-to-Source Voltage (Vdss) rating, (2) Continuous Drain Current (Id) capability, (3) On-state resistance (Rds On) characteristics, (4) Gate threshold voltage (Vgs(th)), (5) Package type and footprint compatibility, and (6) Operating temperature range. All identified substitutes maintain P-Channel MOSFET technology and surface mount TO-252 (DPAK) packaging.

Q: Are all substitute parts RoHS and REACH compliant?

A: Yes. TSM7P06CP ROG and STD10P6F6 are both ROHS3 compliant and REACH unaffected, matching the compliance status of the main part TSM7P06CP.

Q: What is the difference between TSM7P06CP and TSM7P06CP ROG?

A: TSM7P06CP and TSM7P06CP ROG are electrically identical. The ROG designation indicates a different reel configuration used for tape and reel packaging. No circuit performance difference exists between these variants.

Q: Can STD10P6F6 be used in applications with tight thermal constraints?

A: STD10P6F6 has superior thermal performance compared to TSM7P06CP, with a maximum power dissipation of 35W versus 15.6W and an operating temperature range extending to 175°C versus 150°C. This makes STD10P6F6 suitable for applications with higher thermal demands. However, the selection should be based on actual circuit power dissipation requirements and thermal management design.

Q: Are there any gate drive considerations when substituting STD10P6F6 for TSM7P06CP?

A: STD10P6F6 has a higher gate threshold voltage (Vgs(th) of 4V @ 250µA versus 2.5V @ 250µA for TSM7P06CP). In applications with marginal gate drive voltage, this difference may affect switching performance. Gate drive circuits should be evaluated to ensure adequate voltage margin above the threshold voltage for reliable operation.

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