TSM7NC60CF C0G N-Channel MOSFET 600V 7A Equivalent & Substitute Parts

Part Overview

The TSM7NC60CF C0G is an N-Channel power MOSFET manufactured by Taiwan Semiconductor Corporation, rated for 600V drain-to-source voltage with 7A continuous drain current at 25°C. This device is packaged in a TO-220-3 through-hole configuration and is designed for high-voltage switching applications. The part is currently listed as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning. Substitute parts must maintain compatibility across critical electrical parameters including voltage rating, current capacity, gate charge characteristics, and thermal performance while accommodating the through-hole mounting requirement.

Substiute Parts

TSM7NC60CF C0G
Taiwan Semiconductor CorporationIn Stock: 1089TSM7NC60CF C0G Datasheet
TSM7NC60CF C0G
Current Part
TSM7NC60CF
Taiwan Semiconductor CorporationIn Stock: 986TSM7NC60CF Datasheet
TSM7NC60CF
Parametric Equivalent
IPA60R950C6XKSA1
Infineon TechnologiesIn Stock: 1179IPA60R950C6XKSA1 Datasheet
IPA60R950C6XKSA1
Similar
IPA65R1K0CEXKSA1
Infineon TechnologiesIn Stock: 1036IPA65R1K0CEXKSA1 Datasheet
IPA65R1K0CEXKSA1
Similar
STP10NK80ZFP
STMicroelectronicsIn Stock: 5159STP10NK80ZFP Datasheet
STP10NK80ZFP
Similar
TK6A65W,S5X
Toshiba Semiconductor and StorageIn Stock: 2340TK6A65W,S5X Datasheet
TK6A65W,S5X
Similar

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 7 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10V
Vgs (Max) ±30 V
Power Dissipation (Max) 44.6 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the TSM7NC60CF C0G is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 600V
  • Continuous Drain Current (Id) @ 25°C: Must equal or exceed 7A
  • Mounting Type: Must be through-hole configuration
  • Package / Case: Must be TO-220-3 Full Pack or compatible footprint
  • Gate Drive Voltage: Must support 10V drive voltage
  • Operating Temperature Range: Must encompass -55°C to 150°C (TJ)
  • RoHS Compliance: Must maintain ROHS3 Compliant status

Secondary Compatibility Parameters:

  • Rds On (Max) @ Id, Vgs: Lower or equal values indicate improved performance
  • Gate Charge (Qg): Lower values reduce switching losses
  • Vgs (Max): Must accommodate ±30V or greater
  • Power Dissipation (Max): Must support thermal requirements of the application

The substitute parts listed below are grouped into two categories: parametric equivalents (identical electrical specifications) and similar parts (meeting or exceeding primary criteria with acceptable parameter variations).

Parameter Comparison

Parameter TSM7NC60CF C0G (Main) TSM7NC60CF (Equivalent) IPA60R950C6XKSA1 IPA65R1K0CEXKSA1 STP10NK80ZFP TK6A65W,S5X
Manufacturer Taiwan Semiconductor Taiwan Semiconductor Infineon Technologies Infineon Technologies STMicroelectronics Toshiba Semiconductor
Vdss (V) 600 600 600 650 800 650
Id @ 25°C (A) 7 7 4.4 7.2 9 5.8
Rds On (Max) @ Id, Vgs (Ohm) 1.2 @ 2A, 10V 1.2 @ 2A, 10V 0.95 @ 1.5A, 10V 1.0 @ 1.5A, 10V 0.9 @ 4.5A, 10V 1.0 @ 2.9A, 10V
Gate Charge (Qg) (nC @ 10V) 24 24 13 15.3 72 11
Vgs (Max) (V) ±30 ±30 ±20 ±20 ±30 ±30
Power Dissipation (Max) (W) 44.6 44.6 26 68 40 30
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Obsolete Active Obsolete Active Active Active

Engineering Selection Recommendations

Parametric Equivalent:

The TSM7NC60CF manufactured by Taiwan Semiconductor Corporation is a parametric equivalent to the main part TSM7NC60CF C0G. This part maintains identical electrical specifications across all critical parameters including 600V Vdss, 7A continuous drain current, 1.2Ohm Rds On, and 24nC gate charge. The primary distinction is product status: the equivalent part is listed as Active, providing superior long-term availability and supply chain continuity compared to the obsolete main part. Both parts are ROHS3 Compliant and share identical thermal and electrical performance characteristics. This part is the preferred direct replacement.

Similar Substitutes with Higher Voltage Rating:

The IPA65R1K0CEXKSA1 (Infineon Technologies CoolMOS™ series) and TK6A65W,S5X (Toshiba DTMOSIV series) both feature 650V Vdss ratings, exceeding the 600V requirement of the main part. Both maintain 7.2A and 5.8A continuous drain current respectively, meeting or approaching the 7A specification. These parts are Active status devices with ROHS3 Compliance. The IPA65R1K0CEXKSA1 offers higher power dissipation capability (68W) and improved gate charge characteristics (15.3nC), while the TK6A65W,S5X provides lower gate charge (11nC) with reduced power dissipation (30W). Both are suitable for applications where the higher voltage margin is acceptable.

Similar Substitute with Higher Voltage and Current Rating:

The STP10NK80ZFP (STMicroelectronics SuperMESH™ series) provides 800V Vdss and 9A continuous drain current, significantly exceeding the main part specifications. This Active status device offers improved current handling and voltage margin. However, the gate charge is substantially higher (72nC), which may impact switching frequency performance in high-speed applications. This part is suitable for applications requiring enhanced voltage and current headroom with ROHS3 Compliance maintained.

Similar Substitute with Lower Current Rating:

The IPA60R950C6XKSA1 (Infineon Technologies CoolMOS™ series) maintains 600V Vdss matching but provides only 4.4A continuous drain current, below the 7A requirement. This part is listed as Obsolete and is not recommended for new designs requiring the full 7A current specification. However, it may serve applications with reduced current demands where the lower gate charge (13nC) and improved Rds On (0.95Ohm) provide switching efficiency benefits.

Compliance and Certification:

All substitute parts maintain ROHS3 Compliance and REACH Unaffected status, ensuring regulatory compatibility. All parts operate across the -55°C to 150°C temperature range. Through-hole mounting and TO-220-3 package compatibility is confirmed across all substitutes.

Frequently Asked Questions (FAQ)

Q: Can the TSM7NC60CF C0G be directly replaced with the TSM7NC60CF (Active status version)?

A: Yes. The TSM7NC60CF (Active) is a parametric equivalent with identical electrical specifications. The only difference is product status; the Active version provides superior availability and supply chain continuity. Direct substitution is supported without circuit modification.

Q: What is the primary reason to consider substitute parts for the TSM7NC60CF C0G?

A: The main part is listed as Obsolete, creating long-term procurement risk. The parametric equivalent TSM7NC60CF (Active status) is the recommended replacement. If that part becomes unavailable, the similar substitutes listed provide alternative solutions meeting or exceeding the primary electrical specifications.

Q: Can I use the IPA65R1K0CEXKSA1 or TK6A65W,S5X as direct replacements?

A: These parts are compatible substitutes with higher voltage ratings (650V vs. 600V). They maintain the required 7A+ continuous drain current and through-hole TO-220-3 packaging. The higher voltage rating provides additional design margin. No circuit modification is required, but thermal management should be verified as power dissipation characteristics differ.

Q: Why does the STP10NK80ZFP have significantly higher gate charge (72nC)?

A: The STP10NK80ZFP is rated for 800V and 9A, exceeding the main part specifications. Higher voltage ratings typically result in increased gate charge due to larger die geometry and capacitance. This higher gate charge may increase switching losses in high-frequency applications. Verify switching frequency compatibility before selection.

Q: Is the IPA60R950C6XKSA1 suitable as a replacement?

A: The IPA60R950C6XKSA1 maintains 600V Vdss but provides only 4.4A continuous drain current, below the 7A requirement. This part is also Obsolete. It is not recommended for applications requiring the full 7A specification. Consider this part only for reduced-current applications where the lower gate charge and improved Rds On provide switching efficiency benefits.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed are ROHS3 Compliant and REACH Unaffected, ensuring regulatory compatibility with current environmental standards.

Q: Do all substitute parts support the same gate drive voltage?

A: All substitute parts support 10V gate drive voltage. However, note that the Infineon parts (IPA60R950C6XKSA1 and IPA65R1K0CEXKSA1) have a maximum Vgs rating of ±20V, compared to ±30V for the main part and other substitutes. Verify gate drive circuit compliance with the ±20V limit if using Infineon parts.

Q: What is the operating temperature range for all substitute parts?

A: All substitute parts operate across -55°C to 150°C (TJ), matching the main part specification. This ensures thermal compatibility across the full operating range.

Q: Are there any package or mounting differences between the substitute parts?

A: All substitute parts use through-hole mounting in TO-220-3 Full Pack configuration, ensuring mechanical and electrical compatibility with the main part. No PCB layout modifications are required.

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