TSM70N600CP ROG Equivalent & Substitute Parts

Part Overview

The TSM70N600CP ROG is an N-Channel MOSFET rated for 700V drain-to-source voltage with 8A continuous drain current in a surface mount TO-252 (DPAK) package. Manufactured by Taiwan Semiconductor Corporation, this component is classified as obsolete product status. Due to its obsolete classification, identifying equivalent and substitute parts from active manufacturers is necessary to maintain design continuity and ensure long-term component availability for new production runs and system updates.

Substiute Parts

TSM70N600CP ROG
Taiwan Semiconductor CorporationIn Stock: 809TSM70N600CP ROG Datasheet
TSM70N600CP ROG
Current Part
IPD80R600P7ATMA1
Infineon TechnologiesIn Stock: 2740IPD80R600P7ATMA1 Datasheet
IPD80R600P7ATMA1
Similar
TK8P60W,RVQ
Toshiba Semiconductor and StorageIn Stock: 3057TK8P60W,RVQ Datasheet
TK8P60W,RVQ
Similar

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 8 A
Rds On (Max) @ Id, Vgs 600 mOhm @ 4A, 10V
Drive Voltage (Max Rds On) 10 V
Vgs(th) (Max) @ Id 4 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 12.6 @ 10V nC
Vgs (Max) ±30 V
Input Capacitance (Ciss) (Max) @ Vds 743 @ 100V pF
Power Dissipation (Max) 83 W
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)

Substitute Part Grouping Explanation

Substitution of the TSM70N600CP ROG is determined by the following critical parameters:

Mandatory Compatibility Criteria:

  • FET Type: N-Channel topology
  • Package / Case: TO-252-3 (DPAK) physical form factor
  • Mounting Type: Surface Mount
  • Continuous Drain Current (Id): 8A minimum at 25°C
  • Drive Voltage: 10V gate drive capability
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • RoHS3 Compliance: Required for regulatory alignment

Voltage Rating Consideration: The TSM70N600CP ROG specifies 700V Vdss. Substitute parts with equal or higher Vdss ratings (600V, 700V, or 800V) are functionally compatible, as higher voltage ratings provide design margin without compromising circuit operation at the original voltage specification.

On-Resistance (Rds On) Tolerance: Substitute parts with Rds On values at or below 600 mOhm @ 10V gate drive maintain electrical performance equivalence. Variations in measurement conditions (different Id or Vgs test points) are acceptable provided the specified 10V drive voltage is supported.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitute parts with gate charge and input capacitance values within the range of the original specification ensure compatible gate driver performance.

Parameter Comparison

Parameter TSM70N600CP ROG IPD80R600P7ATMA1 TK8P60W,RVQ
Manufacturer Taiwan Semiconductor Corporation Infineon Technologies Toshiba Semiconductor and Storage
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 700 V 800 V 600 V
Current - Continuous Drain (Id) @ 25°C 8 A (Tc) 8 A (Tc) 8 A (Ta)
Drive Voltage (Max Rds On) 10 V 10 V 10 V
Rds On (Max) @ Id, Vgs 600 mOhm @ 4A, 10V 600 mOhm @ 3.4A, 10V 500 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA 3.5 V @ 170µA 3.7 V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 12.6 nC @ 10V 20 nC @ 10V 18.5 nC @ 10V
Vgs (Max) ±30 V ±20 V ±30 V
Input Capacitance (Ciss) (Max) @ Vds 743 pF @ 100V 570 pF @ 500V 570 pF @ 300V
Power Dissipation (Max) 83 W (Tc) 60 W (Tc) 80 W (Tc)
Operating Temperature -55 to 150 °C (TJ) -55 to 150 °C (TJ) -55 to 150 °C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

IPD80R600P7ATMA1 (Infineon Technologies CoolMOS™ P7 Series)

This substitute part is classified as active product status, ensuring long-term availability and manufacturing support. The IPD80R600P7ATMA1 provides 800V Vdss rating, which exceeds the original 700V specification and delivers additional voltage margin. Continuous drain current matches at 8A. The part maintains 10V gate drive compatibility and 600 mOhm Rds On specification. Moisture sensitivity level is improved to MSL 1 (Unlimited), reducing handling and storage constraints compared to the original MSL 3 rating. All regulatory certifications (ROHS3 Compliant, REACH Unaffected, EAR99) align with the original part.

TK8P60W,RVQ (Toshiba Semiconductor DTMOSIV Series)

This substitute part is classified as active product status with established manufacturing continuity. The TK8P60W,RVQ provides 600V Vdss rating, matching the original specification exactly. Continuous drain current is 8A, identical to the original part. On-resistance is 500 mOhm @ 4A, 10V, which is superior to the original 600 mOhm specification. The part maintains 10V gate drive compatibility and full operating temperature range (-55°C to 150°C). Moisture sensitivity level is improved to MSL 1 (Unlimited). All regulatory certifications (ROHS3 Compliant, EAR99) are equivalent to the original part.

Selection Basis:

Both substitute parts satisfy the mandatory compatibility criteria: N-Channel topology, TO-252-3 (DPAK) package, 8A continuous drain current, 10V gate drive, and full operating temperature range. Both are active products from established manufacturers with superior moisture sensitivity ratings. The IPD80R600P7ATMA1 provides higher voltage margin (800V), while the TK8P60W,RVQ provides improved on-resistance performance (500 mOhm) at the exact original voltage rating (600V). Selection between these substitutes depends on circuit voltage requirements and thermal design constraints.

Frequently Asked Questions (FAQ)

Q: Can the IPD80R600P7ATMA1 be used in a circuit designed for the TSM70N600CP ROG?

A: Yes. The IPD80R600P7ATMA1 provides 800V Vdss, which exceeds the original 700V requirement. Both parts share identical 8A continuous drain current, 10V gate drive voltage, and TO-252-3 (DPAK) package. The higher voltage rating provides design margin without affecting circuit operation at the original voltage specification.

Q: What is the difference in on-resistance between the substitute parts?

A: The TSM70N600CP ROG specifies 600 mOhm @ 4A, 10V. The IPD80R600P7ATMA1 specifies 600 mOhm @ 3.4A, 10V. The TK8P60W,RVQ specifies 500 mOhm @ 4A, 10V. The TK8P60W,RVQ provides lower on-resistance, resulting in reduced power dissipation and improved thermal performance.

Q: Are the substitute parts physically compatible with the original PCB layout?

A: Yes. Both substitute parts use the TO-252-3 (DPAK) package with identical pin configuration and lead spacing. No PCB modifications are required for physical installation.

Q: What is the impact of the different gate charge specifications?

A: The TSM70N600CP ROG specifies 12.6 nC @ 10V. The IPD80R600P7ATMA1 specifies 20 nC @ 10V, and the TK8P60W,RVQ specifies 18.5 nC @ 10V. Higher gate charge requires increased gate driver current capability. Verify that the existing gate driver circuit can supply the required charge for the selected substitute part.

Q: Do the substitute parts meet the same regulatory requirements?

A: Yes. Both substitute parts are ROHS3 Compliant and carry EAR99 ECCN classification, matching the original part's regulatory status. The IPD80R600P7ATMA1 and TK8P60W,RVQ both have REACH Unaffected status.

Q: What is the advantage of MSL 1 rating compared to MSL 3?

A: The original TSM70N600CP ROG has MSL 3 (168 Hours), requiring controlled moisture exposure during storage and handling. Both substitute parts have MSL 1 (Unlimited), eliminating moisture sensitivity constraints. This reduces storage complexity and extends shelf life without special environmental controls.

Q: Can both substitute parts be used interchangeably in the same design?

A: Both parts meet the mandatory compatibility criteria and can function in the original circuit. However, differences in gate charge (12.6 nC vs. 20 nC vs. 18.5 nC) and on-resistance (600 mOhm vs. 600 mOhm vs. 500 mOhm) affect gate driver requirements and thermal performance. Verify gate driver capability and thermal design margins for the selected substitute before production implementation.

Q: What is the voltage rating difference between the substitute parts?

A: The IPD80R600P7ATMA1 provides 800V Vdss, while the TK8P60W,RVQ provides 600V Vdss. The original TSM70N600CP ROG is rated for 700V. For circuits operating at or near 700V, the IPD80R600P7ATMA1 provides additional voltage margin. For circuits operating at 600V or below, the TK8P60W,RVQ is fully rated.

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