TSM6N60CP ROG N-Channel 600V 6A MOSFET Equivalent & Substitute Parts

Part Overview

The TSM6N60CP ROG is an N-Channel 600V 6A MOSFET manufactured by Taiwan Semiconductor Corporation in TO-252 (DPAK) surface mount packaging. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing production and maintenance applications. The part delivers 89W maximum power dissipation at case temperature and operates at a maximum junction temperature of 150°C. Substitution is required due to product discontinuation while maintaining electrical and mechanical compatibility within specified parameter tolerances.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	6	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	1.25	Ohm @ 3A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	20.7	nC @ 10V
Maximum Gate Voltage (Vgs)	±30	V
Input Capacitance (Ciss) @ Vds	1248	pF @ 25V
Power Dissipation (Max)	89	W
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the TSM6N60CP ROG is determined by strict alignment of the following critical parameters:

Primary Substitution Criteria:

FET Type: N-Channel topology
Drain to Source Voltage (Vdss): 600V minimum rating
Continuous Drain Current (Id): 6A or greater at 25°C
Drive Voltage: 10V gate drive compatibility
Package / Case: TO-252-3 DPAK mechanical compatibility
RoHS3 Compliance and MSL Level 1 certification

Secondary Compatibility Parameters:

Rds On (Max): Values at or below 1.25 Ohm @ 3A, 10V
Gate Threshold Voltage: 4V ±0.5V @ specified current
Gate Charge: 20.7 nC or lower @ 10V
Maximum Gate Voltage: ±30V or greater
Operating Temperature: 150°C junction temperature minimum

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria) and Functional Alternatives (meeting primary criteria with acceptable parameter variations for specific applications).

Parameter Comparison

Parameter	TSM6N60CP ROG	R6006ANDTL	SPD03N50C3ATMA1	SPD03N60C3ATMA1	STD7LN80K5	STD7NM60N
Manufacturer	Taiwan Semiconductor	Rohm Semiconductor	Infineon Technologies	Infineon Technologies	STMicroelectronics	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	600	600	500	600	800	600
Id @ 25°C (A)	6	6	3.2	3.2	5	5
Drive Voltage (V)	10	10	10	10	10	10
Rds On (Max) @ Id, Vgs (Ohm)	1.25 @ 3A, 10V	1.2 @ 3A, 10V	1.4 @ 2A, 10V	1.4 @ 2A, 10V	1.15 @ 2.5A, 10V	0.9 @ 2.5A, 10V
Vgs(th) (Max) @ Id (V)	4 @ 250µA	4.5 @ 1mA	3.9 @ 135µA	3.9 @ 135µA	5 @ 100µA	4 @ 250µA
Gate Charge (Qg) @ 10V (nC)	20.7	15	15	17	12	14
Vgs (Max) (V)	±30	±30	±20	±20	±30	±25
Ciss @ Vds (pF)	1248 @ 25V	460 @ 25V	350 @ 25V	400 @ 25V	270 @ 100V	363 @ 50V
Power Dissipation (Max) (W)	89	40	38	38	85	45
Operating Temperature (TJ) (°C)	150	150	-55 to 150	-55 to 150	-55 to 150	150
Package / Case	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Obsolete	Last Time Buy	Not For New Designs	Active	Active	Active

Engineering Selection Recommendations

Direct Equivalent (Primary Substitution):

The R6006ANDTL (Rohm Semiconductor) provides the closest functional equivalence to the TSM6N60CP ROG. Both devices share identical Vdss (600V), Id (6A), and drive voltage (10V) specifications. The R6006ANDTL exhibits superior Rds On performance (1.2 Ohm vs. 1.25 Ohm) and lower gate charge (15 nC vs. 20.7 nC), resulting in improved switching efficiency. The device maintains TO-252-3 DPAK package compatibility and ROHS3 compliance. Current product status is Last Time Buy, indicating limited availability but active manufacturing support.

Active Production Alternative (Recommended for New Designs):

The SPD03N60C3ATMA1 (Infineon Technologies, CoolMOS™ series) is the only substitute part with Active product status. This device maintains 600V Vdss and TO-252-3 DPAK compatibility. The continuous drain current is reduced to 3.2A, requiring circuit evaluation for current-limited applications. The SPD03N60C3ATMA1 delivers superior switching characteristics with 17 nC gate charge and 1.4 Ohm Rds On. Extended operating temperature range (-55°C to 150°C) provides thermal margin. Inventory availability is substantial (28,518 pcs), ensuring supply continuity.

Higher Voltage Alternative (Overvoltage Margin Applications):

The STD7LN80K5 (STMicroelectronics, MDmesh™ series) provides 800V Vdss rating with 5A continuous drain current. This device is suitable for applications requiring enhanced voltage margin or operating in elevated transient voltage environments. Rds On performance is superior (1.15 Ohm @ 2.5A, 10V), and gate charge is minimized (12 nC). Active product status and extended temperature range (-55°C to 150°C) support long-term design continuity.

Lower Power Dissipation Alternative (Thermal-Constrained Applications):

The STD7NM60N (STMicroelectronics, MDmesh™ II series) matches 600V Vdss and TO-252-3 DPAK packaging. Continuous drain current is 5A with exceptional Rds On performance (0.9 Ohm @ 2.5A, 10V), resulting in 45W maximum power dissipation. This device is optimal for applications with thermal constraints or high-frequency switching requirements. Active product status and high inventory (104,188 pcs) ensure availability.

Not Recommended for New Designs:

The SPD03N50C3ATMA1 (Infineon Technologies) operates at reduced Vdss (500V) and Id (3.2A), limiting applicability to lower-voltage circuits. Product status is Not For New Designs, indicating end-of-life trajectory.

Frequently Asked Questions (FAQ)

Q: Can the R6006ANDTL directly replace the TSM6N60CP ROG in existing designs?

A: Yes. Both devices share identical Vdss (600V), Id (6A), and drive voltage (10V) specifications. The R6006ANDTL exhibits improved Rds On and gate charge characteristics. TO-252-3 DPAK package compatibility is confirmed. No circuit modifications are required.

Q: What is the primary limitation of the SPD03N60C3ATMA1 as a substitute?

A: The SPD03N60C3ATMA1 has a reduced continuous drain current rating of 3.2A compared to the TSM6N60CP ROG's 6A specification. Applications requiring the full 6A current capacity must use the R6006ANDTL or STD7NM60N instead. The SPD03N60C3ATMA1 is suitable for current-limited or lower-power applications within the 3.2A envelope.

Q: Why is the STD7LN80K5 rated at 800V instead of 600V?

A: The STD7LN80K5 provides enhanced voltage margin for applications subject to transient overvoltage conditions or operating in high-voltage environments. The 800V rating does not prevent operation at 600V; it provides additional safety margin. This device is suitable for designs requiring voltage headroom beyond the nominal 600V specification.

Q: Are all substitute parts RoHS3 compliant and MSL Level 1?

A: Yes. All substitute parts listed (R6006ANDTL, SPD03N50C3ATMA1, SPD03N60C3ATMA1, STD7LN80K5, STD7NM60N) are ROHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity rating. Compliance with environmental and regulatory standards is maintained across all substitutes.

Q: Which substitute part has the best long-term availability?

A: The STD7NM60N (STMicroelectronics) has the highest inventory level (104,188 pcs) and Active product status, ensuring sustained availability. The SPD03N60C3ATMA1 (Infineon Technologies) also has substantial inventory (28,518 pcs) and Active status. Both devices support long-term production continuity.

Q: Can the SPD03N50C3ATMA1 be used in 600V applications?

A: No. The SPD03N50C3ATMA1 is rated for 500V maximum Vdss and is not suitable for 600V applications. Using this device in 600V circuits violates the absolute maximum rating and creates reliability risk. Use only devices with 600V or higher Vdss ratings for 600V applications.

Q: What is the significance of the R6006ANDTL's "Last Time Buy" status?

A: Last Time Buy status indicates that Rohm Semiconductor is discontinuing the R6006ANDTL and will not accept new orders after a specified cutoff date. Existing inventory is available for purchase, but long-term supply cannot be guaranteed. For new designs requiring sustained production, the SPD03N60C3ATMA1 or STD7NM60N (both Active status) are recommended.

Q: Are gate charge differences between substitutes significant?

A: Yes. Gate charge (Qg) directly affects switching speed and driver power requirements. The TSM6N60CP ROG has 20.7 nC gate charge. Substitutes range from 12 nC (STD7LN80K5) to 17 nC (SPD03N60C3ATMA1). Lower gate charge reduces driver stress and improves switching efficiency. Designs with marginal driver capability benefit from lower-Qg substitutes.

Q: What thermal considerations apply when substituting the TSM6N60CP ROG?

A: The TSM6N60CP ROG dissipates 89W maximum power. Substitutes vary: R6006ANDTL (40W), SPD03N60C3ATMA1 (38W), STD7LN80K5 (85W), and STD7NM60N (45W). Lower power dissipation reduces thermal load and may eliminate heatsinking requirements. Designs with existing thermal management can accommodate higher-dissipation devices. Thermal analysis is required when power dissipation changes significantly.

Q: Is the TO-252-3 DPAK package identical across all substitutes?

A: Yes. All substitute parts use TO-252-3 DPAK (2 Leads + Tab) SC-63 packaging, ensuring mechanical and thermal interface compatibility. PCB footprints, lead spacing, and thermal pad dimensions are identical. No layout modifications are required for package substitution.

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