TSM6N50CP ROG Equivalent & Substitute Parts

Part Overview

The TSM6N50CP ROG is an N-Channel MOSFET manufactured by Taiwan Semiconductor Corporation, rated for 500V drain-to-source voltage with 5.6A continuous drain current in a surface mount TO-252 (DPAK) package. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging and product status considerations.

Substiute Parts

TSM6N50CP ROG

Taiwan Semiconductor CorporationIn Stock: 962TSM6N50CP ROG Datasheet

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FDD5N50NZTM

onsemiIn Stock: 19175FDD5N50NZTM Datasheet

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IRFR320TRPBF

Vishay SiliconixIn Stock: 17330IRFR320TRPBF Datasheet

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RJK5033DPD-00#J2

Renesas Electronics CorporationIn Stock: 7069RJK5033DPD-00#J2 Datasheet

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SPD03N50C3ATMA1

Infineon TechnologiesIn Stock: 696SPD03N50C3ATMA1 Datasheet

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SPD03N60C3ATMA1

Infineon TechnologiesIn Stock: 28567SPD03N60C3ATMA1 Datasheet

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STD6NK50ZT4

STMicroelectronicsIn Stock: 23403STD6NK50ZT4 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution compatibility for the TSM6N50CP ROG is determined by the following critical parameters:

Voltage Rating: Substitute parts must have a Vdss rating equal to or greater than 500V to maintain voltage margin in the application circuit.

Current Rating: Substitute parts must support continuous drain current (Id) at or above 5.6A to ensure adequate current handling capacity.

On-State Resistance: Rds On values must be comparable to the original specification (1.4 Ohm @ 2.8A, 10V) to maintain thermal performance and power dissipation characteristics within acceptable limits.

Package Compatibility: All substitute parts must use the TO-252 (DPAK) surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts.

Gate Voltage Compatibility: Maximum gate voltage (Vgs Max) must be ±30V or greater to support the original drive voltage specifications.

Thermal Performance: Power dissipation capability must support the 90W (Tc) thermal requirement of the application.

Compliance: RoHS3 compliance and MSL 1 rating are required for production continuity.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: STD6NK50ZT4

The STD6NK50ZT4 manufactured by STMicroelectronics provides the closest electrical match to the TSM6N50CP ROG. Both devices share identical voltage (500V) and current (5.6A) ratings with comparable on-state resistance (1.2 Ohm vs. 1.4 Ohm). Power dissipation capability is equivalent at 90W (Tc). The device uses the standard DPAK package and maintains RoHS3 compliance with MSL 1 rating. However, the STD6NK50ZT4 is classified as "Not For New Designs," indicating limited long-term availability.

Secondary Substitute: RJK5033DPD-00#J2

The RJK5033DPD-00#J2 manufactured by Renesas Electronics Corporation is an active product with 500V voltage rating and 6A continuous drain current, exceeding the original 5.6A specification. On-state resistance of 1.3 Ohm @ 3A, 10V is superior to the original specification. Power dissipation is rated at 65W (Tc), which is lower than the original 90W but remains within acceptable thermal margins for most applications. The device uses an MP-3A package variant of the TO-252 family and maintains full RoHS3 compliance. Active product status ensures long-term availability.

Tertiary Substitute: FDD5N50NZTM

The FDD5N50NZTM manufactured by onsemi is an active product with 500V voltage rating and 4A continuous drain current. While the current rating is below the original 5.6A specification, the on-state resistance of 1.5 Ohm @ 2A, 10V is comparable. Power dissipation is rated at 62W (Tc). The device uses the TO-252AA package variant and maintains RoHS3 compliance with MSL 1 rating. This substitute is suitable for applications where current requirements do not exceed 4A.

Not Recommended: IRFR320TRPBF

The IRFR320TRPBF manufactured by Vishay Siliconix has a reduced voltage rating of 400V, which is below the original 500V specification. Continuous drain current is limited to 3.1A, significantly below the 5.6A requirement. This device is not suitable for direct substitution in applications requiring full 500V voltage margin.

Not Recommended: SPD03N50C3ATMA1 and SPD03N60C3ATMA1

Both Infineon CoolMOS devices have continuous drain current ratings of 3.2A (Tc), which is insufficient for the 5.6A requirement of the original device. While voltage ratings are adequate (500V and 600V respectively), the reduced current capacity and lower power dissipation (38W Tc) make these devices unsuitable for direct substitution.

Frequently Asked Questions (FAQ)

Q: Can the STD6NK50ZT4 be used as a direct replacement for the TSM6N50CP ROG?

A: The STD6NK50ZT4 provides electrical equivalence with matching 500V voltage rating, 5.6A current rating, and 90W power dissipation. Both devices use the TO-252 (DPAK) package. However, the STD6NK50ZT4 is classified as "Not For New Designs," which may limit availability for future production runs. For new designs, the RJK5033DPD-00#J2 is recommended as an active alternative.

Q: What is the significance of the "Not For New Designs" product status?

A: "Not For New Designs" indicates that the manufacturer is not actively promoting the device for new applications and may discontinue production. While existing inventory may be available, long-term supply cannot be guaranteed. For applications requiring extended production life, selection of an "Active" status device is recommended.

Q: Why does the RJK5033DPD-00#J2 use an MP-3A package instead of standard DPAK?

A: The MP-3A package is a variant of the TO-252 family with identical pinout and mechanical compatibility. The MP-3A designation indicates a specific manufacturer package variant. PCB layouts designed for standard DPAK packages will accommodate MP-3A devices without modification.

Q: Can the FDD5N50NZTM be used in applications requiring 5.6A continuous current?

A: The FDD5N50NZTM is rated for 4A continuous drain current at 25°C. Use in applications requiring 5.6A would exceed the device rating and result in thermal stress and potential failure. This device is suitable only for applications where continuous current does not exceed 4A.

Q: What is the impact of different gate threshold voltages across substitute parts?

A: Gate threshold voltage (Vgs(th)) determines the gate voltage required to turn the device on. Variations from 3.9V to 5V across substitute parts may affect switching speed and drive circuit design. Applications with fixed gate drive voltages should verify that the selected substitute device will achieve full on-state conduction at the available drive voltage.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed in this reference are RoHS3 compliant and maintain MSL 1 (Unlimited) moisture sensitivity rating, matching the original device specifications. This ensures compatibility with modern manufacturing processes and environmental regulations.

Q: How does input capacitance variation affect circuit performance?

A: Input capacitance (Ciss) ranges from 350 pF to 900 pF across the listed devices. Higher capacitance increases gate charge requirements and may slow switching speed in fixed-impedance drive circuits. Applications with capacitive-coupled gate drives should verify that the selected substitute device's capacitance is compatible with the drive circuit design.

Q: What is the difference between Ta and Tc current ratings?

A: Ta (ambient temperature) ratings specify continuous current at a specified ambient temperature, typically 25°C. Tc (case temperature) ratings specify continuous current at a specified case temperature, typically 25°C. Both rating methods are valid; comparison should use consistent measurement conditions. The original TSM6N50CP ROG specifies 5.6A (Ta), while the STD6NK50ZT4 specifies 5.6A (Tc).