TSM680P06CP P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The TSM680P06CP is an active P-Channel MOSFET manufactured by Taiwan Semiconductor Corporation, rated for 60V drain-to-source voltage and 18A continuous drain current at 25°C. The device is packaged in TO-252 (DPAK) surface mount configuration with a maximum power dissipation of 20W at case temperature. This component is ROHS3 compliant and REACH unaffected, suitable for power switching applications requiring P-channel enhancement-mode operation.

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing due to inventory constraints, supply chain considerations, or when functionally compatible devices from different manufacturers meet the same electrical and mechanical specifications.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	60	V
Current - Continuous Drain (Id) @ 25°C	18	A (Tc)
Rds On (Max) @ Id, Vgs	68	mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2.2	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16.4	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	870	pF @ 30V
Power Dissipation (Max)	20	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of P-Channel MOSFETs is determined by electrical and mechanical compatibility within the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must equal or exceed 60V
Continuous Drain Current (Id) must meet or exceed 18A at 25°C case temperature
Gate-Source Voltage (Vgs) maximum rating must be ±20V or greater
On-state resistance (Rds On) characteristics must support the application's power dissipation requirements
Gate threshold voltage (Vgs(th)) must be compatible with drive circuit specifications
Operating temperature range must encompass -55°C to 150°C minimum

Mechanical Compatibility Criteria:

Package type must be TO-252-3 (DPAK) surface mount configuration
Lead count and tab configuration must match TO-252 standard
Mounting footprint must be identical for direct PCB substitution

Regulatory Compliance:

ROHS3 compliance required
REACH status must be unaffected or affected (both acceptable for substitution purposes)

Substitute parts are classified as parametric equivalents when all electrical and mechanical parameters match the main part specification. Similar parts are classified when electrical parameters differ within acceptable application tolerances while maintaining the same package and mounting type.

Parameter Comparison

Parameter	TSM680P06CP	TSM680P06CP ROG	DMPH6050SK3Q-13	SUD19P06-60-GE3
Manufacturer	Taiwan Semiconductor	Taiwan Semiconductor	Diodes Incorporated	Vishay Siliconix
FET Type	P-Channel	P-Channel	P-Channel	P-Channel
Vdss	60V	60V	60V	60V
Id @ 25°C	18A (Tc)	18A (Tc)	7.2A (Ta), 23.6A (Tc)	18.3A (Tc)
Rds On (Max)	68mOhm @ 6A, 10V	68mOhm @ 6A, 10V	50mOhm @ 7A, 10V	60mOhm @ 10A, 10V
Vgs(th) (Max)	2.2V @ 250µA	2.2V @ 250µA	3V @ 250µA	3V @ 250µA
Gate Charge (Qg)	16.4nC @ 10V	16.4nC @ 10V	25nC @ 10V	40nC @ 10V
Ciss (Max)	870pF @ 30V	870pF @ 30V	1377pF @ 30V	1710pF @ 25V
Power Dissipation (Max)	20W (Tc)	20W (Tc)	1.9W (Ta)	2.3W (Ta), 38.5W (Tc)
Operating Temperature	-55 to 150°C	-55 to 150°C	-55 to 175°C	-55 to 150°C
Package	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	Not specified	3 (168 Hours)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

TSM680P06CP ROG (Parametric Equivalent)

The TSM680P06CP ROG is a direct parametric equivalent manufactured by Taiwan Semiconductor Corporation. All electrical specifications, including Vdss, Id, Rds On, gate charge, and input capacitance, are identical to the main part. The device maintains the same TO-252-3 package configuration and operating temperature range. ROHS3 compliance and REACH unaffected status are maintained. This part is suitable for direct substitution in all applications where the TSM680P06CP is specified. The MSL rating of 3 (168 Hours) applies to this variant.

DMPH6050SK3Q-13 (Similar Substitute)

The DMPH6050SK3Q-13 manufactured by Diodes Incorporated meets the 60V Vdss requirement and provides 23.6A continuous drain current at case temperature, exceeding the 18A specification. The device is packaged in TO-252-3 configuration with identical mounting characteristics. On-state resistance of 50mOhm at 7A, 10V is lower than the main part specification. Gate charge of 25nC and input capacitance of 1377pF are higher than the main part. Operating temperature range extends to 175°C, providing additional thermal margin. ROHS3 compliance is maintained with MSL rating of 1 (Unlimited). This part is suitable for applications where lower on-state resistance and extended temperature operation are beneficial.

SUD19P06-60-GE3 (Similar Substitute)

The SUD19P06-60-GE3 manufactured by Vishay Siliconix (TrenchFET® series) meets the 60V Vdss requirement with 18.3A continuous drain current at case temperature, matching the main part specification. The device is packaged in TO-252-3 configuration with identical mounting characteristics. On-state resistance of 60mOhm at 10A, 10V is lower than the main part specification. Gate charge of 40nC and input capacitance of 1710pF are higher than the main part. Power dissipation capability at case temperature is 38.5W, significantly exceeding the main part's 20W rating. Operating temperature range is -55°C to 150°C, matching the main part. ROHS3 compliance is maintained with MSL rating of 1 (Unlimited). REACH status is affected. This part is suitable for applications requiring enhanced power dissipation capability and lower on-state resistance.

Frequently Asked Questions (FAQ)

Q: Can TSM680P06CP ROG be used as a direct replacement for TSM680P06CP?

A: Yes. The TSM680P06CP ROG is a parametric equivalent with identical electrical specifications and package configuration. All electrical parameters, including Vdss, Id, Rds On, gate charge, and input capacitance, match the main part specification. Direct substitution is supported for all applications.

Q: What are the key differences between DMPH6050SK3Q-13 and the main part?

A: The DMPH6050SK3Q-13 provides higher continuous drain current (23.6A at case temperature versus 18A), lower on-state resistance (50mOhm versus 68mOhm), and extended operating temperature to 175°C. Gate charge and input capacitance are higher. Power dissipation at ambient temperature is lower (1.9W versus 20W at case temperature). The device is suitable for applications where these parameter differences are acceptable or beneficial.

Q: What are the key differences between SUD19P06-60-GE3 and the main part?

A: The SUD19P06-60-GE3 provides continuous drain current of 18.3A at case temperature, matching the main part specification. On-state resistance is lower (60mOhm versus 68mOhm). Gate charge and input capacitance are significantly higher. Power dissipation capability at case temperature is substantially higher (38.5W versus 20W). The device is suitable for applications requiring enhanced thermal performance and lower on-state resistance.

Q: Are all substitute parts available in the same TO-252-3 package?

A: Yes. All substitute parts listed are packaged in TO-252-3 (DPAK) surface mount configuration with identical lead count and tab configuration. Direct PCB footprint compatibility is maintained for all substitutes.

Q: What is the significance of MSL (Moisture Sensitivity Level) ratings?

A: MSL ratings indicate moisture sensitivity during storage and handling. TSM680P06CP ROG has MSL 3 (168 Hours), requiring controlled storage conditions. DMPH6050SK3Q-13 and SUD19P06-60-GE3 have MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. Selection depends on storage and handling capabilities in your manufacturing environment.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance. TSM680P06CP and TSM680P06CP ROG are REACH unaffected. SUD19P06-60-GE3 is REACH affected. Compliance status should be verified against specific project requirements.

Q: Can DMPH6050SK3Q-13 be used in applications requiring 20W power dissipation?

A: The DMPH6050SK3Q-13 has a maximum power dissipation rating of 1.9W at ambient temperature. For applications requiring sustained 20W dissipation at case temperature, this part is not suitable. The SUD19P06-60-GE3 with 38.5W case temperature rating is appropriate for such applications.

Q: What is the impact of higher gate charge on circuit performance?

A: Higher gate charge (Qg) increases the charge required to switch the device on and off, potentially requiring higher gate drive current or longer switching times. TSM680P06CP and TSM680P06CP ROG have 16.4nC gate charge. DMPH6050SK3Q-13 has 25nC, and SUD19P06-60-GE3 has 40nC. Gate drive circuit design must accommodate these differences.

Q: What is the impact of higher input capacitance on circuit performance?

A: Higher input capacitance (Ciss) increases the capacitive load on the gate drive circuit, potentially requiring higher drive current or affecting switching speed. TSM680P06CP and TSM680P06CP ROG have 870pF. DMPH6050SK3Q-13 has 1377pF, and SUD19P06-60-GE3 has 1710pF. Gate drive circuit design must accommodate these differences.

Q: Are there inventory considerations for selecting substitute parts?

A: Current inventory levels are: TSM680P06CP (4130 pcs), TSM680P06CP ROG (1430 pcs), DMPH6050SK3Q-13 (6300 pcs), and SUD19P06-60-GE3 (50300 pcs). Availability may influence selection when immediate sourcing is required.

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