TSM60NB600CP ROG Equivalent & Substitute Parts

Part Overview

The TSM60NB600CP ROG is an N-Channel 600V 7A MOSFET in TO-252 (DPAK) surface mount packaging manufactured by Taiwan Semiconductor Corporation. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing production and maintenance applications. The part delivers 63W maximum power dissipation and operates across the temperature range of -55°C to 150°C (TJ). Due to its obsolete status, equivalent parts with active product status and parametrically compatible specifications are required for design continuity and supply chain management.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	7	A (Tc)
Rds On (Max) @ Id, Vgs	600 mOhm @ 2.1A, 10V	—
Gate Threshold Voltage Vgs(th) (Max)	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13	nC @ 10V
Power Dissipation (Max)	63	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package	TO-252-3, DPAK	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the TSM60NB600CP ROG is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V minimum (higher voltage ratings acceptable)
Continuous Drain Current (Id): 7A minimum at 25°C
Rds On (Max): 600 mOhm or lower at specified gate voltage
Gate Threshold Voltage: 4V or lower
Package: TO-252 (DPAK) surface mount configuration
Operating Temperature: -55°C to 150°C minimum range
RoHS3 Compliance and REACH Unaffected status

Substitution Categories:

Parametric Equivalent (Direct Replacement): TSM60NB600CP in Tape & Reel packaging maintains identical electrical specifications with active product status and higher inventory availability.

Direct Manufacturer Substitute: TK560P65Y,RQ (Toshiba) provides 650V rating with 7A continuous current, lower Rds On (560 mOhm), and active product status. Voltage rating exceeds requirement; current and on-resistance specifications meet or exceed the original part.

Similar Alternatives: FCD600N60Z, IXTY8N65X2, SIHD7N60E-GE3, SPD08N50C3ATMA1, STD10NM60ND, and TK8P60W,RVQ offer comparable electrical performance within the 600V to 650V voltage class with 7A to 8A current ratings and compatible DPAK packaging. These parts accommodate the original design requirements with variations in gate charge, input capacitance, and power dissipation characteristics.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Diss. (W)	Temp Range (°C)	Product Status	Package
TSM60NB600CP ROG	Taiwan Semiconductor	600	7	600 @ 2.1A, 10V	4 @ 250µA	13 @ 10V	63	-55 to 150	Obsolete	TO-252 DPAK
TSM60NB600CP (TR)	Taiwan Semiconductor	600	7	600 @ 2.1A, 10V	4 @ 250µA	13 @ 10V	63	-55 to 150	Active	TO-252 DPAK
TK560P65Y,RQ	Toshiba Semiconductor	650	7	560 @ 3.5A, 10V	4 @ 240µA	14.5 @ 10V	60	-55 to 150	Active	TO-252 DPAK
FCD600N60Z	onsemi	600	7.4	600 @ 3.7A, 10V	3.5 @ 250µA	26 @ 10V	89	-55 to 150	Not For New Designs	TO-252AA DPAK
IXTY8N65X2	IXYS	650	8	500 @ 4A, 10V	5 @ 250µA	12 @ 10V	150	-55 to 150	Active	TO-252AA DPAK
SIHD7N60E-GE3	Vishay Siliconix	600	7	600 @ 3.5A, 10V	4 @ 250µA	40 @ 10V	78	-55 to 150	Active	TO-252 DPAK
SPD08N50C3ATMA1	Infineon Technologies	500	7.6	600 @ 4.6A, 10V	3.9 @ 350µA	32 @ 10V	83	-55 to 150	Active	TO-252-3 DPAK
STD10NM60ND	STMicroelectronics	600	8	600 @ 4A, 10V	5 @ 250µA	20 @ 10V	70	-55 to 150	Active	TO-252 DPAK
TK8P60W,RVQ	Toshiba Semiconductor	600	8	500 @ 4A, 10V	3.7 @ 400µA	18.5 @ 10V	80	-55 to 150	Active	TO-252 DPAK

Engineering Selection Recommendations

Recommended Primary Substitute: TSM60NB600CP in Tape & Reel (TR) packaging provides identical electrical and thermal specifications to the original part with active product status. This option ensures direct compatibility without design modification and maintains the same performance envelope across all operating conditions.

Recommended Secondary Substitute: TK560P65Y,RQ (Toshiba) offers superior electrical performance with lower on-resistance (560 mOhm versus 600 mOhm) and higher voltage rating (650V versus 600V). Active product status and established supply chain availability support long-term production continuity. The 50V voltage margin provides additional design margin for transient overvoltage conditions.

Alternative Substitutes for Specific Applications:

STD10NM60ND (STMicroelectronics) provides 600V/8A capability with active product status and FDmesh™ II technology. The 8A continuous current rating and 70W power dissipation accommodate applications requiring higher current capacity within the same thermal package.

SIHD7N60E-GE3 (Vishay Siliconix) maintains exact voltage and current specifications (600V/7A) with active product status. Higher gate charge (40 nC) and power dissipation (78W) require thermal design verification for applications with tight thermal budgets.

TK8P60W,RVQ (Toshiba) delivers 600V/8A with improved on-resistance (500 mOhm) and lower gate charge (18.5 nC), supporting faster switching applications. Active product status and DTMOSIV series designation indicate mature technology platform.

Not Recommended for New Designs: FCD600N60Z carries "Not For New Designs" status despite meeting electrical specifications. This designation restricts use to legacy system maintenance only.

Voltage Derating Consideration: SPD08N50C3ATMA1 operates at 500V maximum, representing a 100V reduction from the original 600V specification. This part is suitable only for applications with confirmed maximum operating voltage below 500V.

All recommended substitutes maintain RoHS3 compliance and REACH Unaffected status consistent with the original part.

Frequently Asked Questions (FAQ)

Q: Can TSM60NB600CP ROG be directly replaced with TSM60NB600CP in Tape & Reel packaging?

A: Yes. Both parts share identical electrical specifications, thermal characteristics, and package configuration. The only difference is packaging format (Cut Tape versus Tape & Reel). The Tape & Reel version carries active product status and higher inventory availability, making it the preferred direct replacement.

Q: What is the primary advantage of TK560P65Y,RQ over the original TSM60NB600CP ROG?

A: TK560P65Y,RQ provides three key improvements: (1) higher voltage rating (650V versus 600V), providing 50V design margin; (2) lower on-resistance (560 mOhm versus 600 mOhm), reducing conduction losses; (3) active product status with established long-term supply availability. All other critical parameters (7A continuous current, 10V gate drive, -55°C to 150°C operating range) remain equivalent.

Q: Are all substitute parts pin-compatible with the original TSM60NB600CP ROG?

A: Yes. All listed substitutes use TO-252 (DPAK) surface mount packaging with identical pin configuration: Gate (pin 1), Drain (pin 2), and Source (tab). Physical footprint compatibility is confirmed across all alternatives.

Q: Which substitute part offers the lowest on-resistance?

A: IXTY8N65X2 and TK8P60W,RVQ both provide 500 mOhm on-resistance, representing a 100 mOhm improvement over the original 600 mOhm specification. This reduction decreases conduction losses in high-current applications.

Q: Can SPD08N50C3ATMA1 be used as a direct replacement?

A: SPD08N50C3ATMA1 is not a direct replacement due to its 500V maximum voltage rating, which is 100V below the original 600V specification. Use this part only in applications where the maximum operating voltage is confirmed below 500V. Exceeding 500V will cause device failure.

Q: What is the significance of "Not For New Designs" status on FCD600N60Z?

A: This designation indicates the manufacturer has discontinued active support and recommends against use in new product development. While FCD600N60Z meets electrical specifications, it is restricted to legacy system maintenance and repair applications only. New designs should select from parts with "Active" product status.

Q: How does gate charge affect switching performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (13 nC for TSM60NB600CP ROG, 12 nC for IXTY8N65X2) enables faster switching with lower driver power dissipation. Higher gate charge (40 nC for SIHD7N60E-GE3) requires more driver current but may provide improved noise immunity in certain applications.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 Compliant certification and REACH Unaffected status, matching the environmental compliance profile of the original TSM60NB600CP ROG.

Q: What thermal considerations apply when selecting a substitute?

A: Power dissipation ratings vary across substitutes (60W to 150W). Applications with tight thermal budgets should prioritize parts with lower power dissipation (TK560P65Y,RQ at 60W, STD10NM60ND at 70W). Applications requiring higher current capacity may benefit from higher power dissipation ratings (IXTY8N65X2 at 150W) to accommodate thermal margin.

Q: Which substitute offers the best overall compatibility for immediate replacement?

A: TSM60NB600CP in Tape & Reel packaging provides 100% electrical and thermal equivalence with active product status. This option requires no design modification and maintains identical performance across all operating conditions. For applications requiring enhanced performance, TK560P65Y,RQ offers superior specifications with minimal design impact.

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