TSM60NB600CF Equivalent & Substitute Parts

Part Overview

The TSM60NB600CF is an N-Channel power MOSFET rated for 600V drain-to-source voltage with 8A continuous drain current at 25°C. This device is packaged in a TO-220-3 through-hole configuration and is designed for high-voltage switching applications. The part is currently Active in product status with 5100 pieces in stock inventory.

Substitute parts are necessary when the primary part becomes unavailable, reaches end-of-life status, or when design requirements necessitate alternative electrical or thermal characteristics. The TSM60NB600CF C0G variant has transitioned to Obsolete status, making equivalent alternatives essential for ongoing production and maintenance applications.

Substiute Parts

TSM60NB600CF
Taiwan Semiconductor CorporationIn Stock: 5118TSM60NB600CF Datasheet
TSM60NB600CF
Current Part
TSM60NB600CF C0G
Taiwan Semiconductor CorporationIn Stock: 987TSM60NB600CF C0G Datasheet
TSM60NB600CF C0G
Parametric Equivalent
IPA60R600C6XKSA1
Infineon TechnologiesIn Stock: 1481IPA60R600C6XKSA1 Datasheet
IPA60R600C6XKSA1
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IPA80R450P7XKSA1
Infineon TechnologiesIn Stock: 52961IPA80R450P7XKSA1 Datasheet
IPA80R450P7XKSA1
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SPA11N80C3XKSA1
Infineon TechnologiesIn Stock: 3529SPA11N80C3XKSA1 Datasheet
SPA11N80C3XKSA1
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STF10N80K5
STMicroelectronicsIn Stock: 9569STF10N80K5 Datasheet
STF10N80K5
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STF12N65M5
STMicroelectronicsIn Stock: 23381STF12N65M5 Datasheet
STF12N65M5
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STF14N80K5
STMicroelectronicsIn Stock: 1808STF14N80K5 Datasheet
STF14N80K5
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 8 A
Rds On (Max) @ Id, Vgs 600 mOhm @ 1.7A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 4 V @ 250µA
Gate Charge (Qg) @ Vgs 16 nC @ 10V
Input Capacitance (Ciss) @ Vds 528 pF @ 100V
Power Dissipation (Max) 41.7 W
Operating Temperature Range -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-220-3
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the TSM60NB600CF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): 600V minimum
  • Continuous Drain Current (Id): 8A minimum at 25°C
  • Gate Drive Voltage: 10V
  • Mounting Type: Through Hole
  • Package Type: TO-220-3 Full Pack configuration
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Parameters:

  • Rds On (Max): 600 mOhm or lower at specified conditions
  • Gate Threshold Voltage (Vgs(th)): 4V or lower
  • Gate Charge (Qg): 16 nC or lower
  • Input Capacitance (Ciss): 528 pF or lower
  • Power Dissipation: 41.7W or higher

Substitute parts are grouped into two categories: Parametric Equivalents (identical electrical specifications) and Similar Alternatives (meeting minimum substitution criteria with variations in secondary parameters).

Parameter Comparison

Parameter TSM60NB600CF TSM60NB600CF C0G IPA60R600C6XKSA1 IPA80R450P7XKSA1 SPA11N80C3XKSA1 STF10N80K5 STF12N65M5 STF14N80K5
Vdss (V) 600 600 600 800 800 800 650 800
Id @ 25°C (A) 8 8 7.3 11 11 9 8.5 12
Rds On (mOhm) 600 @ 1.7A 600 @ 1.7A 600 @ 2.4A 450 @ 4.5A 450 @ 7.1A 600 @ 4.5A 430 @ 4.3A 445 @ 6A
Vgs(th) (V) 4 @ 250µA 4 @ 250µA 3.5 @ 200µA 3.5 @ 220µA 3.9 @ 680µA 5 @ 100µA 5 @ 250µA 5 @ 100µA
Qg (nC) 16 @ 10V 16 @ 10V 20.5 @ 10V 24 @ 10V 85 @ 10V 22 @ 10V 22 @ 10V 22 @ 10V
Ciss (pF) 528 @ 100V 528 @ 100V 440 @ 100V 770 @ 500V 1600 @ 100V 635 @ 100V 900 @ 100V 620 @ 100V
Pd (W) 41.7 41.7 28 29 34 30 25 30
Tj Range (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 150 -55 to 150
Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-5 TO-220-3
Manufacturer Taiwan Semiconductor Taiwan Semiconductor Infineon Infineon Infineon STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Last Time Buy Active Not For New Designs Active Active Active
RoHS3 Compliant Yes Yes Yes Yes Yes Yes Yes Yes

Engineering Selection Recommendations

Parametric Equivalent:

TSM60NB600CF C0G is an exact electrical equivalent with identical specifications across all measured parameters. However, this part has transitioned to Obsolete product status. Selection of this substitute is limited to applications requiring existing inventory or legacy system maintenance. New designs should not incorporate this variant.

Primary Active Substitute:

IPA80R450P7XKSA1 (Infineon CoolMOS™) is the recommended substitute for new designs. This part maintains Active product status with 52,862 pieces in stock. While Vdss is elevated to 800V and Id is increased to 11A, these parameters provide design margin for the 600V/8A application. The lower Rds On (450 mOhm) and reduced gate charge (24 nC) improve switching efficiency. The TO-220-3 package maintains mechanical compatibility.

Secondary Active Alternatives:

STF14N80K5 (STMicroelectronics MDmesh™ K5) provides 800V/12A capability in TO-220-3 package with Active status. This part offers superior current handling and lower Rds On (445 mOhm) compared to the original specification.

STF10N80K5 (STMicroelectronics MDmesh™) provides 800V/9A capability with Active status and maintains the 600 mOhm Rds On specification at different measurement conditions.

STF12N65M5 (STMicroelectronics MDmesh™ V) operates at 650V/8.5A with Active status. This part closely matches the original voltage and current ratings with improved Rds On (430 mOhm). Note: Operating temperature range is specified as 150°C maximum without lower limit documentation.

Substitutes Not Recommended for New Designs:

IPA60R600C6XKSA1 (Infineon) has transitioned to Last Time Buy status. SPA11N80C3XKSA1 (Infineon) is marked Not For New Designs. These parts should be avoided in new product development.

Compliance Status:

All recommended substitutes maintain ROHS3 compliance and REACH Unaffected status, matching the original part's regulatory certifications.

Frequently Asked Questions (FAQ)

Q: Can TSM60NB600CF C0G be used as a direct replacement for TSM60NB600CF?

A: TSM60NB600CF C0G is electrically identical to the original part with matching specifications across all parameters. However, this variant has reached Obsolete product status. Direct substitution is technically valid but not recommended for new designs due to limited availability and supply chain risk.

Q: What is the primary difference between the TSM60NB600CF and IPA80R450P7XKSA1?

A: The IPA80R450P7XKSA1 has a higher Vdss rating (800V vs. 600V), higher continuous current (11A vs. 8A), and lower on-resistance (450 mOhm vs. 600 mOhm). These differences provide design margin and improved efficiency. The part is electrically compatible for 600V/8A applications and maintains the same TO-220-3 package configuration.

Q: Are all substitute parts available in the same TO-220-3 package?

A: All recommended substitutes except STF12N65M5 are available in TO-220-3 Full Pack configuration. STF12N65M5 is packaged as TO-220-5 Full Pack, which has additional pins but maintains mechanical compatibility with standard TO-220-3 mounting hardware. Pin configuration differences must be verified during circuit board layout.

Q: What does "Last Time Buy" product status mean for IPA60R600C6XKSA1?

A: Last Time Buy status indicates that the manufacturer has announced end-of-life for this part. Limited inventory remains available for purchase, but no future production is planned. This part should not be selected for new designs or long-term production applications.

Q: Can I use STF14N80K5 (12A) in place of TSM60NB600CF (8A)?

A: Yes. STF14N80K5 exceeds the minimum current requirement (12A vs. 8A) and maintains the same voltage rating (800V vs. 600V). The higher current rating provides design margin. The part is electrically compatible and maintains TO-220-3 package compatibility. Thermal management must account for the lower power dissipation rating (30W vs. 41.7W).

Q: What is the significance of Gate Charge (Qg) differences between substitute parts?

A: Gate charge affects switching speed and gate drive circuit requirements. Lower gate charge (16 nC for TSM60NB600CF) results in faster switching transitions and lower gate drive power consumption. Substitute parts with higher gate charge (up to 85 nC for SPA11N80C3XKSA1) require higher gate drive current or longer switching times. This parameter must be evaluated against existing gate drive circuit capabilities.

Q: Why does STF12N65M5 have a different operating temperature specification?

A: STF12N65M5 is documented with a maximum junction temperature of 150°C without a specified minimum. The original TSM60NB600CF specifies -55°C to 150°C. This difference may indicate different thermal characterization or documentation practices. Applications requiring operation below 0°C should verify compatibility with the device manufacturer.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance and REACH Unaffected status, matching the regulatory certifications of the original TSM60NB600CF. This ensures compatibility with environmental and hazardous substance restrictions.

Q: What does "Not For New Designs" mean for SPA11N80C3XKSA1?

A: Not For New Designs status indicates that the manufacturer recommends against incorporating this part into new product development. While existing inventory may be available, the manufacturer has designated this part for legacy support only. New designs should select from parts with Active or Last Time Buy status.

Q: How do I determine which substitute is best for my application?

A: Selection depends on three factors: (1) Product Status—prioritize Active status parts for new designs; (2) Electrical Requirements—verify that Vdss, Id, Rds On, and gate charge meet circuit specifications; (3) Thermal Requirements—confirm that power dissipation rating accommodates application heat generation. Consult the device datasheet for detailed electrical characteristics and thermal management guidelines.

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