TSM60NB190CF Equivalent & Substitute Parts

Part Overview

The TSM60NB190CF is an N-Channel 600V, 18A power MOSFET manufactured by Taiwan Semiconductor Corporation, housed in a TO-220-3 through-hole package. This device is classified as Active and is suitable for high-voltage switching applications requiring continuous drain current up to 18A at 25°C with a maximum power dissipation of 59.5W.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative packaging or thermal characteristics better suit application requirements, or when design optimization requires components with comparable electrical performance from different manufacturers.

Substiute Parts

TSM60NB190CF
Taiwan Semiconductor CorporationIn Stock: 815TSM60NB190CF Datasheet
TSM60NB190CF
Current Part
TSM60NB190CF C0G
Taiwan Semiconductor CorporationIn Stock: 4707TSM60NB190CF C0G Datasheet
TSM60NB190CF C0G
Parametric Equivalent
FCPF16N60NT
onsemiIn Stock: 2677FCPF16N60NT Datasheet
FCPF16N60NT
Similar
IPA60R199CPXKSA1
Infineon TechnologiesIn Stock: 1530IPA60R199CPXKSA1 Datasheet
IPA60R199CPXKSA1
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IPAW60R180P7SXKSA1
Infineon TechnologiesIn Stock: 1187IPAW60R180P7SXKSA1 Datasheet
IPAW60R180P7SXKSA1
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R6024ENX
Rohm SemiconductorIn Stock: 150339R6024ENX Datasheet
R6024ENX
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TK20A60W,S5VX
Toshiba Semiconductor and StorageIn Stock: 886TK20A60W,S5VX Datasheet
TK20A60W,S5VX
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 18 A
On-State Resistance (Rds On) @ 3.7A, 10V 190 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 32 nC
Power Dissipation (Max) 59.5 W
Operating Temperature Range -55 to 150 °C
Package Type TO-220-3 Through Hole

Substitute Part Grouping Explanation

Substitution of the TSM60NB190CF is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a Drain to Source Voltage (Vdss) of 600V or higher to ensure safe operation in the same circuit topology.

Current Rating: Continuous drain current must be 18A or greater at 25°C to support equivalent load conditions.

On-State Resistance: Rds On values must not exceed 190mOhm at the specified gate voltage to maintain comparable conduction losses and thermal performance.

Gate Charge: Gate charge characteristics affect switching speed and driver requirements; values near 32nC are preferred for circuit compatibility.

Package and Mounting: All substitutes use TO-220-3 through-hole mounting to ensure mechanical and thermal interface compatibility.

Temperature Range: Operating temperature range of -55°C to 150°C must be maintained.

Compliance: RoHS3 compliance and REACH unaffected status are required for regulatory alignment.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Qg (nC) Power Dissipation (W) Package Status
TSM60NB190CF Taiwan Semiconductor 600 18 190 @ 3.7A, 10V 32 @ 10V 59.5 TO-220-3 Active
TSM60NB190CF C0G Taiwan Semiconductor 600 18 190 @ 3.7A, 10V 32 @ 10V 59.5 TO-220-3 Obsolete
IPAW60R180P7SXKSA1 Infineon Technologies 650 18 180 @ 5.6A, 10V 25 @ 10V 26 TO-220-3 Not For New Designs
FCPF16N60NT onsemi 600 16 199 @ 8A, 10V 52.3 @ 10V 35.7 TO-220-3 Obsolete
IPA60R199CPXKSA1 Infineon Technologies 650 16 199 @ 9.9A, 10V 43 @ 10V 34 TO-220-3 Not For New Designs
R6024ENX Rohm Semiconductor 600 24 165 @ 11.3A, 10V 70 @ 10V 40 TO-220-3 Active
TK20A60W,S5VX Toshiba Semiconductor 600 20 155 @ 10A, 10V 48 @ 10V 45 TO-220-3 Active

Engineering Selection Recommendations

Parametric Equivalent (Identical Electrical Performance):

TSM60NB190CF C0G is a parametric equivalent with identical electrical specifications. However, this part carries an Obsolete product status. Selection of this substitute is appropriate only when existing inventory must be consumed or when design revision is not feasible. For new designs, the Active status TSM60NB190CF is the preferred choice.

Higher Current Rating Substitutes:

R6024ENX (Rohm Semiconductor) and TK20A60W,S5VX (Toshiba Semiconductor) both offer higher continuous drain current ratings (24A and 20A respectively) while maintaining 600V voltage rating and TO-220-3 packaging. Both parts carry Active product status. These substitutes provide design margin for applications requiring higher current capacity. R6024ENX exhibits lower on-state resistance (165mOhm) compared to the primary part, resulting in reduced conduction losses. TK20A60W,S5VX provides intermediate current rating with similarly reduced on-state resistance (155mOhm).

Higher Voltage Rating Substitutes:

IPAW60R180P7SXKSA1 (Infineon Technologies CoolMOS™ P7 series) and IPA60R199CPXKSA1 (Infineon Technologies CoolMOS™ series) both offer 650V voltage rating with 18A and 16A continuous drain current respectively. These parts are classified as Not For New Designs. The IPAW60R180P7SXKSA1 matches the 18A current requirement and exhibits superior on-state resistance (180mOhm) and lower gate charge (25nC), resulting in improved switching performance and reduced driver stress. However, the higher voltage rating and obsolescence status limit applicability to legacy designs or applications requiring voltage margin.

Lower Current Rating Substitute:

FCPF16N60NT (onsemi SupreMOS™ series) provides 16A continuous drain current at 600V rating. This part is Obsolete and exhibits higher gate charge (52.3nC) and higher on-state resistance (199mOhm) compared to the primary part. Selection is limited to applications where 16A current capacity is sufficient and existing inventory must be utilized.

Recommended Selection Criteria:

For new designs requiring equivalent performance, maintain selection of TSM60NB190CF (Active status). For applications requiring higher current capacity with reduced conduction losses, select R6024ENX or TK20A60W,S5VX. All recommended substitutes maintain RoHS3 compliance and REACH unaffected status. Obsolete and Not For New Designs parts should be reserved for legacy system maintenance or inventory consumption only.

Frequently Asked Questions (FAQ)

Q: Can TSM60NB190CF C0G be used as a direct replacement for TSM60NB190CF?

A: TSM60NB190CF C0G is a parametric equivalent with identical electrical specifications, on-state resistance, gate charge, and power dissipation. Direct substitution is electrically valid. However, TSM60NB190CF C0G carries Obsolete product status, while TSM60NB190CF is Active. For new designs, TSM60NB190CF is the appropriate choice. TSM60NB190CF C0G is suitable only when existing inventory must be consumed or design revision is not feasible.

Q: What is the difference between the TSM60NB190CF and R6024ENX?

A: Both parts maintain 600V voltage rating and TO-220-3 packaging. R6024ENX provides higher continuous drain current (24A versus 18A) and lower on-state resistance (165mOhm versus 190mOhm), resulting in reduced conduction losses. R6024ENX is Active status. Selection of R6024ENX is appropriate when applications require higher current capacity or when design optimization targets reduced thermal dissipation. Gate charge is higher (70nC versus 32nC), requiring consideration of driver circuit capabilities.

Q: Can IPAW60R180P7SXKSA1 replace TSM60NB190CF in existing designs?

A: IPAW60R180P7SXKSA1 matches the 18A continuous drain current requirement and provides superior on-state resistance (180mOhm versus 190mOhm) and lower gate charge (25nC versus 32nC). However, IPAW60R180P7SXKSA1 carries a 650V voltage rating (versus 600V) and is classified as Not For New Designs. Substitution is electrically feasible for legacy designs where the higher voltage rating provides additional margin. The lower gate charge may require driver circuit verification to ensure adequate switching performance.

Q: Why is FCPF16N60NT listed as a substitute if it has lower current rating?

A: FCPF16N60NT is listed as a similar substitute based on voltage rating (600V) and package type (TO-220-3). However, the 16A continuous drain current is lower than the 18A requirement of TSM60NB190CF. Selection of FCPF16N60NT is appropriate only for applications where 16A current capacity is sufficient. This part is Obsolete and should be reserved for legacy system maintenance or inventory consumption.

Q: What are the key differences between TSM60NB190CF and TK20A60W,S5VX?

A: TK20A60W,S5VX provides higher continuous drain current (20A versus 18A) and lower on-state resistance (155mOhm versus 190mOhm) at 600V voltage rating in TO-220-3 packaging. TK20A60W,S5VX is Active status. Gate charge is higher (48nC versus 32nC). Selection of TK20A60W,S5VX is appropriate when applications require higher current capacity or reduced conduction losses. Driver circuit verification is recommended due to increased gate charge.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed in this reference carry RoHS3 compliance and REACH unaffected status, matching the regulatory requirements of TSM60NB190CF. Compliance status is consistent across all alternatives.

Q: What is the significance of product status (Active, Obsolete, Not For New Designs)?

A: Product status indicates manufacturer support and availability. Active parts are currently manufactured and supported for new designs. Obsolete parts are no longer manufactured; selection is limited to existing inventory consumption or legacy system maintenance. Not For New Designs parts are manufactured but not recommended for new applications; selection is appropriate for legacy designs or when design revision is not feasible. For new designs, Active status parts are the appropriate choice.

Q: Can I use a substitute with higher voltage rating in place of TSM60NB190CF?

A: Substitutes with higher voltage rating (650V) are electrically compatible with circuits designed for 600V operation. The higher voltage rating provides additional safety margin. However, higher voltage rated devices may exhibit different switching characteristics and gate charge requirements. Circuit verification is necessary to ensure driver compatibility and switching performance.

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