TSM60N600CP ROG N-Channel 600V 8A MOSFET Equivalent & Substitute Parts

Part Overview

The TSM60N600CP ROG is an N-Channel 600V 8A surface mount MOSFET manufactured by Taiwan Semiconductor Corporation in TO-252 (DPAK) packaging. This device is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. The TSM60N600CP ROG operates across a temperature range of -55°C to 150°C and is RoHS3 compliant with MSL 3 rating.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	8	A
Rds On (Max) @ Id, Vgs	600 mOhm @ 4A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	13	nC @ 10V
Power Dissipation (Max)	83	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	TO-252 (DPAK)
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the TSM60N600CP ROG is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 8A minimum at 25°C
Rds On (Max): 600 mOhm or lower at specified gate voltage
Gate Threshold Voltage (Vgs(th)): 4V or lower
Mounting Type: Surface Mount TO-252 (DPAK) package
Operating Temperature: -55°C to 150°C minimum
RoHS3 Compliance

Secondary Compatibility Factors:

Gate Charge (Qg): Lower values preferred for switching efficiency
Power Dissipation: 83W or higher
Input Capacitance (Ciss): Electrical compatibility with drive circuits
Maximum Gate Voltage (Vgs): ±20V or higher

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria) and Compatible Alternatives (meeting primary criteria with minor parameter variations).

Parameter Comparison

Parameter	TSM60N600CP ROG	IPD60R600P7ATMA1	IXFY8N65X2	IXTY8N65X2	SPD08N50C3ATMA1	STD11NM60ND	TK10P60W,RVQ
Manufacturer	Taiwan Semiconductor	Infineon Technologies	IXYS	IXYS	Infineon Technologies	STMicroelectronics	Toshiba Semiconductor
Vdss (V)	600	600	650	650	500	600	600
Id @ 25°C (A)	8	6	8	8	7.6	10	9.7
Rds On (Max) @ 10V (mOhm)	600 @ 4A	600 @ 1.7A	450 @ 4A	500 @ 4A	600 @ 4.6A	450 @ 5A	430 @ 4.9A
Vgs(th) (V)	4 @ 250µA	4 @ 80µA	5 @ 250µA	5 @ 250µA	3.9 @ 350µA	5 @ 250µA	3.7 @ 500µA
Qg (nC) @ 10V	13	9	11	12	32	30	20
Ciss (pF)	743 @ 100V	363 @ 400V	790 @ 25V	800 @ 25V	750 @ 25V	850 @ 50V	700 @ 300V
Power Dissipation (W)	83	30	150	150	83	90	80
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-252 (DPAK)	PG-TO252-3	TO-252AA	TO-252AA	PG-TO252-3	DPAK	DPAK
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	3 (168 Hours)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Direct Equivalent (Recommended Primary Substitutes):

TK10P60W,RVQ (Toshiba Semiconductor) is the primary recommended substitute. This device matches the 600V Vdss rating, exceeds the 8A continuous drain current requirement at 9.7A, and maintains compatible Rds On performance at 430 mOhm. The part is in active production status with unlimited MSL rating, providing superior supply chain availability compared to the obsolete TSM60N600CP ROG. All compliance certifications (RoHS3, REACH Unaffected, EAR99) align with the original part.

STD11NM60ND (STMicroelectronics) provides an alternative with 600V Vdss and 10A continuous drain current, exceeding the original 8A specification. Rds On performance is superior at 450 mOhm. This part is actively produced with unlimited MSL rating and full compliance certifications.

Compatible Alternatives (Secondary Substitutes):

IXFY8N65X2 and IXTY8N65X2 (IXYS) both offer 650V Vdss rating with 8A continuous drain current matching the original specification. These devices feature improved Rds On performance (450 mOhm and 500 mOhm respectively) and higher power dissipation ratings (150W). Both are actively produced with unlimited MSL ratings. The higher voltage rating provides additional design margin for transient overvoltage conditions.

IPD60R600P7ATMA1 (Infineon Technologies CoolMOS™ P7 series) maintains exact 600V Vdss specification but operates at 6A continuous drain current, which is below the original 8A requirement. This part is suitable only for applications where the 6A rating is acceptable. It features superior Rds On performance at 600 mOhm and lower gate charge (9 nC), reducing switching losses.

SPD08N50C3ATMA1 (Infineon Technologies CoolMOS™ series) operates at 500V Vdss, which is below the original 600V specification. This part is suitable only for applications with maximum operating voltages of 500V or lower. It provides 7.6A continuous drain current and maintains 83W power dissipation matching the original part.

All substitute parts are RoHS3 compliant and REACH unaffected, meeting regulatory requirements for the original TSM60N600CP ROG.

Frequently Asked Questions (FAQ)

Q: Can I use IPD60R600P7ATMA1 as a direct replacement for TSM60N600CP ROG?

A: IPD60R600P7ATMA1 is not a direct replacement. While it matches the 600V Vdss rating, it operates at 6A continuous drain current, which is 25% below the original 8A specification. Use this part only if your application current requirements do not exceed 6A at 25°C.

Q: What is the key difference between IXFY8N65X2 and IXTY8N65X2?

A: Both devices are IXYS Ultra X2 series MOSFETs with 650V Vdss and 8A continuous drain current. The primary difference is Rds On performance: IXFY8N65X2 operates at 450 mOhm while IXTY8N65X2 operates at 500 mOhm at 4A and 10V gate voltage. IXFY8N65X2 provides superior on-state performance with lower conduction losses.

Q: Why is STD11NM60ND rated for 10A when the original part is 8A?

A: STD11NM60ND is a higher-current variant within the same voltage class. The 10A rating indicates the device can handle higher continuous drain current while maintaining the same 600V Vdss specification. This part is suitable for applications requiring the original 8A or lower, with the additional current capacity providing design margin.

Q: Can I use SPD08N50C3ATMA1 in a 600V application?

A: No. SPD08N50C3ATMA1 is rated for maximum 500V Vdss. Using this part in a 600V application will result in device failure due to exceeding the maximum voltage specification. This part is suitable only for applications with maximum operating voltages of 500V or lower.

Q: What does the TO-252 (DPAK) package designation mean?

A: TO-252 and DPAK are equivalent package designations for the same surface mount package format. Both refer to a 3-lead package with 2 leads plus a tab for thermal connection. All substitute parts listed use compatible TO-252 or DPAK package variants, ensuring mechanical and thermal compatibility with the original TSM60N600CP ROG footprint.

Q: Why is the TSM60N600CP ROG listed as obsolete?

A: Obsolete status indicates the manufacturer has discontinued production of this part. Active substitute parts from major manufacturers (Toshiba, STMicroelectronics, Infineon, IXYS) provide equivalent or superior performance with ongoing production support and supply chain availability.

Q: What is MSL rating and why does it matter?

A: MSL (Moisture Sensitivity Level) indicates how sensitive a component is to moisture during storage and handling. The original TSM60N600CP ROG has MSL 3 (168 hours), requiring more careful moisture control. Most substitute parts have MSL 1 (unlimited), providing greater flexibility in storage and handling without special precautions.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this document are RoHS3 compliant and REACH unaffected, matching the regulatory compliance of the original TSM60N600CP ROG.

Q: Which substitute provides the best Rds On performance?

A: TK10P60W,RVQ and STD11NM60ND both provide superior Rds On performance at 430 mOhm and 450 mOhm respectively, compared to the original 600 mOhm specification. Lower Rds On reduces conduction losses and heat generation during operation.

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