Request Quote
(Ships tomorrow)
Equivalent & Substitute Parts for TSM5NC50CZ
Part Overview
TSM5NC50CZ is an N-channel MOSFET manufactured by Taiwan Semiconductor Corporation, classified under the transistors, FETs, and MOSFETs product category. This device is rated for 500V drain-source voltage and 5A continuous drain current, housed in a TO-220-3 through-hole package. The part is active. Identifying suitable substitutes is essential for supply chain resiliency, sourcing flexibility, and continued manufacturability when facing possible inventory constraints or lifecycle changes.
Substiute Parts
Key Parameters
| Parameter | TSM5NC50CZ |
|---|---|
| Manufacturer | Taiwan Semiconductor Corporation |
| Category | Transistors, FETs, MOSFETs |
| Description | 500V, 5A, SINGLE N-CHANNEL POWE |
| Detailed Description | N-Channel 500 V 5A (Tc) 89W (Tc) Through Hole TO-220 |
| Series | - |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.38Ohm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 586 pF @ 50 V |
| Power Dissipation (Max) | 89W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Base Product Number | TSM5 |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
Substitute Part Grouping Explanation
The substitute relationship for MOSFET category components such as TSM5NC50CZ is based strictly on the following key parameters: FET type, technology, drain to source voltage (Vdss), continuous drain current (Id), drive voltage, maximum Rds(on), Vgs(th), gate charge (Qg), Vgs (Max), input capacitance (Ciss), power dissipation, operating temperature, mounting type, package/case, RoHS status, and REACH status. Only parts matching these parameters can be considered for substitution.
Parameter Comparison
| Parameter | TSM5NC50CZ | TSM5NC50CZ C0G |
|---|---|---|
| Manufacturer | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
| Category | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs |
| Packaging | Tube | Tube |
| Description | 500V, 5A, SINGLE N-CHANNEL POWE | MOSFET N-CHANNEL 500V 5A TO220 |
| Detailed Description | N-Channel 500 V 5A (Tc) 89W (Tc) Through Hole TO-220 | N-Channel 500 V 5A (Tc) 89W (Tc) Through Hole TO-220 |
| Series | - | - |
| Part/ Product Status | Active | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) | 5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 1.38Ohm @ 2.5A, 10V | 1.38Ohm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | 15 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 586 pF @ 50 V | 586 pF @ 50 V |
| Power Dissipation (Max) | 89W (Tc) | 89W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-220 | TO-220 |
| Package / Case | TO-220-3 | TO-220-3 |
| Base Product Number | TSM5 | TSM5 |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected |
| ECCN | EAR99 | EAR99 |
| HTSUS | 8541.29.0095 | 8541.29.0095 |
Engineering Selection Recommendations
Based on the provided information, both TSM5NC50CZ and TSM5NC50CZ C0G meet identical RoHS3 and REACH compliance requirements and ECCN/HTSUS classifications. TSM5NC50CZ is in active status, while the substitute TSM5NC50CZ C0G is listed as obsolete. Selection between these parts should consider product lifecycle status and required compliance only as per procurement and design requirements.
Frequently Asked Questions (FAQ)
Q: What are the main criteria for substituting MOSFETs in the TO-220 package category?
A: Substitution is governed by FET type, drain to source voltage, continuous drain current, maximum Rds(on), gate threshold voltage, gate charge, input capacitance, power dissipation, operating temperature, package/case specifications, RoHS status, and REACH status.
Q: Are TSM5NC50CZ and TSM5NC50CZ C0G mechanically compatible?
A: Both parts use the TO-220-3 through-hole package and are mechanically compatible.
Q: Does product status affect the selection of substitute MOSFETs?
A: Yes. TSM5NC50CZ is active, while TSM5NC50CZ C0G is obsolete. Product status should be prioritized according to project requirements.
Q: Is there any difference in environmental compliance between the main and substitute part?
A: Both TSM5NC50CZ and TSM5NC50CZ C0G are ROHS3 compliant and REACH unaffected.
Q: What inventory considerations are relevant when selecting between active and obsolete parts?
A: Active parts are typically preferred for ongoing designs due to long-term availability, while obsolete parts may only be appropriate for legacy support or short-term needs.
Alternative Parts
SJ6012L2TP
Littelfuse Inc.
6 Alternative Parts
JMK107BBJ476MA-RE
Taiyo Yuden
10 Alternative Parts
GMK107BBJ475MA-T
Taiyo Yuden
5 Alternative Parts
SJ6020N2ARP
Littelfuse Inc.
3 Alternative Parts
SJ6025R2ATP
Littelfuse Inc.
4 Alternative Parts
2474-05L
API Delevan Inc.
1 Alternative Parts
4590R-684K
API Delevan Inc.
1 Alternative Parts
CM6560R-334
API Delevan Inc.
1 Alternative Parts
CM6460-104
API Delevan Inc.
1 Alternative Parts
5526-12
API Delevan Inc.
1 Alternative Parts