TSM4NB65CP ROG N-Channel 650V 4A MOSFET Equivalent & Substitute Parts

Part Overview

The TSM4NB65CP ROG is an N-Channel 650V 4A MOSFET manufactured by Taiwan Semiconductor Corporation in a Surface Mount TO-252 (DPAK) package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. The part operates across a temperature range of -55°C to 150°C and dissipates up to 70W at the case temperature, making it suitable for moderate-power switching applications in high-voltage circuits.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	4	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	3.37	Ohm @ 2A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4.5	V @ 250µA
Gate Charge (Qg) @ Vgs	13.46	nC @ 10V
Power Dissipation (Max)	70	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	TO-252-3 (DPAK)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the TSM4NB65CP ROG is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: N-Channel topology
Drain to Source Voltage (Vdss): Minimum 650V rating required
Continuous Drain Current (Id): Minimum 4A at 25°C
Drive Voltage: 10V gate drive compatibility
Operating Temperature Range: -55°C to 150°C minimum
RoHS Compliance: ROHS3 Compliant status
Package Compatibility: Surface Mount or Through Hole configurations acceptable based on circuit board design

The substitute parts identified meet the electrical performance envelope of the original device while accommodating variations in packaging, current ratings, and voltage ratings that remain within acceptable application parameters.

Parameter Comparison

Parameter	TSM4NB65CP ROG	IPD80R2K8CEATMA1	IRFIB5N65APBF
Manufacturer	Taiwan Semiconductor	Infineon Technologies	Vishay Siliconix
FET Type	N-Channel	N-Channel	N-Channel
Vdss (V)	650	800	650
Id @ 25°C (A)	4	1.9	5.1
Rds On (Max) @ 10V (Ohm)	3.37 @ 2A	2.8 @ 1.1A	0.93 @ 3.1A
Vgs(th) (Max) (V)	4.5 @ 250µA	3.9 @ 120µA	4 @ 250µA
Gate Charge (Qg) @ 10V (nC)	13.46	12	48
Power Dissipation (Max) (W)	70	42	60
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150
Mounting Type	Surface Mount	Surface Mount	Through Hole
Package	TO-252-3 (DPAK)	PG-TO252-3	TO-220-3
Product Status	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IPD80R2K8CEATMA1 (Infineon Technologies CoolMOS™ CE Series)

This substitute is an active product with ROHS3 compliance and unlimited moisture sensitivity rating. The device features an 800V Vdss rating, providing enhanced voltage margin over the original 650V specification. The continuous drain current of 1.9A is lower than the original 4A rating; therefore, this substitute is suitable only for applications where the actual circuit current demand does not exceed 1.9A. The gate charge of 12 nC is comparable to the original 13.46 nC, supporting similar switching characteristics. Surface Mount packaging in PG-TO252-3 maintains board-level compatibility with the original TO-252-3 footprint. This device is recommended for designs requiring higher voltage headroom with reduced current requirements.

IRFIB5N65APBF (Vishay Siliconix)

This substitute is an active product with ROHS3 compliance and unlimited moisture sensitivity rating. The device maintains the 650V Vdss rating identical to the original part and provides a higher continuous drain current of 5.1A, exceeding the original 4A specification. The on-resistance of 0.93 Ohm at 3.1A and 10V is significantly lower than the original 3.37 Ohm, resulting in reduced power dissipation during operation. The gate charge of 48 nC is substantially higher than the original 13.46 nC, indicating increased switching losses and slower switching transitions. The Through Hole TO-220-3 package differs from the original Surface Mount TO-252-3 configuration, requiring circuit board redesign for mechanical and thermal integration. This device is recommended for applications requiring higher current capacity and lower on-resistance with tolerance for increased gate charge and package form factor changes.

Frequently Asked Questions (FAQ)

Q: Can the IPD80R2K8CEATMA1 directly replace the TSM4NB65CP ROG in all applications?

A: The IPD80R2K8CEATMA1 is not a direct replacement for all applications. While it maintains Surface Mount TO-252-3 package compatibility and comparable gate charge characteristics, its continuous drain current rating of 1.9A is insufficient for circuits requiring the original 4A specification. This substitute is suitable only for applications where actual circuit current remains below 1.9A at 25°C.

Q: What are the implications of the higher gate charge in the IRFIB5N65APBF?

A: The IRFIB5N65APBF exhibits a gate charge of 48 nC compared to the original 13.46 nC. This increased gate charge results in higher switching losses, longer switching transition times, and increased driver circuit power consumption. Circuit designs must account for these characteristics in gate driver selection and thermal management calculations.

Q: Is the Through Hole TO-220-3 package of the IRFIB5N65APBF compatible with the original Surface Mount TO-252-3 footprint?

A: No. The IRFIB5N65APBF uses a Through Hole TO-220-3 package, which is mechanically and electrically incompatible with the Surface Mount TO-252-3 footprint of the original part. Circuit board redesign is required to accommodate this package form factor, including modifications to PCB layout, mounting holes, and thermal management provisions.

Q: Do all substitute parts maintain the same operating temperature range?

A: Yes. Both substitute parts maintain the -55°C to 150°C operating temperature range specified for the original TSM4NB65CP ROG, ensuring thermal compatibility across the full application temperature envelope.

Q: Are all parts RoHS3 compliant?

A: Yes. The original part and both substitute parts are ROHS3 compliant, meeting environmental and regulatory requirements for lead-free manufacturing and hazardous substance restrictions.

Q: What is the significance of the moisture sensitivity level differences?

A: The original TSM4NB65CP ROG has a Moisture Sensitivity Level (MSL) of 3 with a 168-hour floor life limit, requiring controlled storage and handling conditions. Both substitute parts have MSL 1 with unlimited floor life, providing superior moisture tolerance and simplified storage requirements without time-based constraints.

Q: Which substitute part is recommended for direct footprint compatibility?

A: The IPD80R2K8CEATMA1 maintains Surface Mount TO-252-3 package compatibility with the original part, allowing direct PCB footprint substitution without board redesign. However, circuit current requirements must not exceed 1.9A for this substitute to function within its rated specifications.

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