TSM4N70CP ROG Equivalent & Substitute Parts

Part Overview

The TSM4N70CP ROG is an N-Channel MOSFET manufactured by Taiwan Semiconductor Corporation, rated for 700V drain-to-source voltage with 3.5A continuous drain current at 25°C. The device is housed in a TO-252 (DPAK) surface mount package and is designed for high-voltage switching applications. This part is classified as obsolete, making equivalent substitute components necessary for ongoing design support and procurement continuity.

Substiute Parts

TSM4N70CP ROG
Taiwan Semiconductor CorporationIn Stock: 1011TSM4N70CP ROG Datasheet
TSM4N70CP ROG
Current Part
IPD80R2K8CEATMA1
Infineon TechnologiesIn Stock: 5971IPD80R2K8CEATMA1 Datasheet
IPD80R2K8CEATMA1
Similar
SPD02N80C3ATMA1
Infineon TechnologiesIn Stock: 9997SPD02N80C3ATMA1 Datasheet
SPD02N80C3ATMA1
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 700 V
Continuous Drain Current (Id) @ 25°C 3.5 A (Tc)
On-State Resistance (Rds On Max) @ 2A, 10V 3.3 Ohm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 4 V
Gate Charge (Qg Max) @ 10V 14 nC
Power Dissipation (Max) 56 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-252 (DPAK) Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the TSM4N70CP ROG is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: Substitute parts must maintain or exceed the 700V Vdss rating to ensure safe operation in the original application circuit. The identified substitutes operate at 800V, providing voltage margin above the original specification.

Current Handling Capability: The original part delivers 3.5A continuous drain current. Substitute parts must support the required current level for the application. The identified substitutes provide 1.9A and 2A ratings respectively, which represent reduced current capacity compared to the original device.

On-State Resistance (Rds On): This parameter directly affects power dissipation and switching losses. The original part specifies 3.3 Ohm maximum at 2A and 10V gate drive. Substitute parts provide lower Rds On values (2.8 Ohm and 2.7 Ohm), resulting in improved efficiency characteristics.

Package Compatibility: Both substitute parts use the TO-252-3 (DPAK) package with identical pinout and footprint, ensuring direct mechanical and electrical compatibility without PCB redesign.

Gate Drive Voltage: All parts operate with 10V drive voltage, maintaining consistency in gate drive circuit requirements.

Temperature Range: All parts support the -55°C to 150°C operating temperature range, ensuring thermal compatibility.

Parameter Comparison

Parameter TSM4N70CP ROG IPD80R2K8CEATMA1 SPD02N80C3ATMA1 Unit
Manufacturer Taiwan Semiconductor Infineon Technologies Infineon Technologies
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 700 800 800 V
Continuous Drain Current (Id) @ 25°C 3.5 1.9 2 A (Tc)
Drive Voltage (Max Rds On) 10 10 10 V
Rds On (Max) @ Specified Conditions 3.3 @ 2A 2.8 @ 1.1A 2.7 @ 1.2A Ohm
Gate Threshold Voltage (Vgs(th) Max) 4 @ 250µA 3.9 @ 120µA 3.9 @ 120µA V
Gate Charge (Qg Max) @ 10V 14 12 16 nC
Input Capacitance (Ciss Max) 595 @ 25V 290 @ 100V 290 @ 100V pF
Power Dissipation (Max) 56 42 42 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 -55 to 150 °C (TJ)
Package Type TO-252 (DPAK) PG-TO252-3 PG-TO252-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

For Active Production Requirements:

The SPD02N80C3ATMA1 and IPD80R2K8CEATMA1 are both active products manufactured by Infineon Technologies, providing long-term availability and supply chain stability compared to the obsolete TSM4N70CP ROG. Both substitute parts carry ROHS3 compliance and REACH unaffected status, matching the regulatory requirements of the original component.

Current Capacity Considerations:

Applications requiring the full 3.5A continuous drain current of the original part cannot be directly substituted with either Infineon device, as both provide reduced current ratings (1.9A and 2A respectively). Circuit redesign or parallel device configuration may be necessary for applications with current demands exceeding the substitute part ratings.

Voltage Margin:

The 800V Vdss rating of both substitute parts provides 100V additional voltage margin above the original 700V specification, offering enhanced safety margin in high-voltage switching applications.

Thermal and Efficiency Characteristics:

Both substitute parts exhibit lower on-state resistance values and reduced power dissipation ratings (42W versus 56W), resulting in improved thermal performance and reduced switching losses compared to the original device.

Moisture Sensitivity:

The substitute parts carry MSL 1 (Unlimited) rating, compared to the original part's MSL 3 (168 Hours), providing superior moisture resistance and simplified handling requirements during storage and assembly.

Frequently Asked Questions (FAQ)

Q: Can the IPD80R2K8CEATMA1 or SPD02N80C3ATMA1 be used as direct replacements for the TSM4N70CP ROG?

A: Both parts share identical TO-252 (DPAK) package geometry and pinout, enabling direct PCB-level substitution without layout modifications. However, the reduced current ratings (1.9A and 2A versus 3.5A) require circuit analysis to confirm compatibility with application current requirements.

Q: What is the primary difference between the two Infineon substitute parts?

A: The SPD02N80C3ATMA1 provides 2A continuous drain current with 2.7 Ohm on-state resistance, while the IPD80R2K8CEATMA1 provides 1.9A with 2.8 Ohm on-state resistance. The SPD02N80C3ATMA1 offers slightly higher current capacity and lower on-state resistance, making it the preferred choice for applications requiring maximum current handling within the substitute part family.

Q: Are there any gate drive circuit modifications required when substituting these parts?

A: No modifications are required. All parts operate with 10V gate drive voltage and maintain compatible gate threshold voltage specifications (3.9V to 4V), allowing existing gate drive circuits to function without adjustment.

Q: How do the voltage ratings compare between the original and substitute parts?

A: The original TSM4N70CP ROG is rated for 700V Vdss, while both substitute parts are rated for 800V Vdss. This 100V increase provides additional voltage margin and allows operation in higher-voltage applications without exceeding device ratings.

Q: What are the implications of the lower power dissipation ratings in the substitute parts?

A: The substitute parts are rated for 42W maximum power dissipation compared to the original 56W rating. This reflects improved efficiency characteristics due to lower on-state resistance. Applications must ensure that actual power dissipation remains within the 42W limit through proper thermal management and circuit design.

Q: Do the substitute parts have different moisture sensitivity requirements?

A: Yes. The original part carries MSL 3 (168 Hours), requiring moisture bake-out procedures before reflow soldering if storage exceeds 168 hours. The substitute parts carry MSL 1 (Unlimited), eliminating moisture sensitivity concerns and simplifying manufacturing logistics.

Q: Are all parts compliant with current environmental regulations?

A: Yes. The original TSM4N70CP ROG and both substitute parts are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic component manufacturing and use.

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