TSM4936DCS RLG Equivalent & Substitute Parts

Part Overview

The TSM4936DCS RLG is a dual N-channel MOSFET array manufactured by Taiwan Semiconductor Corporation, rated for 30V drain-to-source voltage with 5.9A continuous drain current at 25°C. This component is configured as a 2 N-channel device in an 8-SOP surface mount package and is designed for general-purpose switching and amplification applications requiring moderate power dissipation up to 3W.

The TSM4936DCS RLG carries a "Not For New Designs" product status, indicating that Taiwan Semiconductor Corporation has discontinued active development and support for this part number. This status necessitates identification of equivalent substitute components that maintain functional and electrical compatibility while offering active product support and improved availability from alternative manufacturers.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	5.9	A
Rds On (Max) @ Id, Vgs	36	mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id	3	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	610	pF @ 15V
Power - Max	3	W
Operating Temperature Range	-55 to 150	°C (TJ)
Configuration	2 N-Channel (Dual)	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the TSM4936DCS RLG is determined by strict electrical and mechanical parameter matching within the MOSFET category. The following parameters establish substitution eligibility:

Electrical Parameters (Critical for Functional Equivalence):

Drain to Source Voltage (Vdss): 30V minimum
Configuration: 2 N-Channel (Dual) topology
Gate threshold voltage (Vgs(th)): 3V @ 250µA
On-state resistance (Rds On): 36mOhm @ 5.9A, 10V

Mechanical Parameters (Critical for Physical Compatibility):

Package type: 8-SOIC surface mount
Package dimensions: 0.154" width (3.90mm)
Mounting type: Surface mount

Compliance Parameters:

RoHS3 compliance required
Operating temperature range: -55°C to 150°C (TJ)

The SI4936ADY-T1-GE3 manufactured by Vishay Siliconix meets all critical electrical and mechanical substitution criteria. This part maintains identical voltage rating, dual N-channel configuration, gate threshold voltage, on-state resistance specification, and 8-SOIC package geometry. The SI4936ADY-T1-GE3 is classified as an Active product with full manufacturer support, addressing the obsolescence status of the original TSM4936DCS RLG.

Parameter Comparison

Parameter	TSM4936DCS RLG	SI4936ADY-T1-GE3	Match Status
Manufacturer	Taiwan Semiconductor Corporation	Vishay Siliconix	Different
Drain to Source Voltage (Vdss)	30V	30V	Equivalent
Current - Continuous Drain (Id) @ 25°C	5.9A	4.4A	Substitute (Lower)
Rds On (Max) @ Id, Vgs	36mOhm @ 5.9A, 10V	36mOhm @ 5.9A, 10V	Equivalent
Vgs(th) (Max) @ Id	3V @ 250µA	3V @ 250µA	Equivalent
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V	20nC @ 10V	Substitute (Higher)
Input Capacitance (Ciss) (Max) @ Vds	610pF @ 15V	Not Specified	Data Not Available
Power - Max	3W	1.1W	Substitute (Lower)
Operating Temperature Range	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	Equivalent
Configuration	2 N-Channel (Dual)	2 N-Channel (Dual)	Equivalent
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	Equivalent
Mounting Type	Surface Mount	Surface Mount	Equivalent
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Equivalent
Product Status	Not For New Designs	Active	Substitute (Active)

Engineering Selection Recommendations

Primary Substitute: SI4936ADY-T1-GE3

The SI4936ADY-T1-GE3 is the qualified substitute for the TSM4936DCS RLG based on the following engineering criteria:

Compliance and Support Status: The SI4936ADY-T1-GE3 carries Active product status from Vishay Siliconix, providing ongoing manufacturer support, documentation updates, and supply chain continuity. This directly addresses the obsolescence risk associated with the TSM4936DCS RLG "Not For New Designs" classification. Both components maintain ROHS3 compliance and identical operating temperature specifications (-55°C to 150°C TJ).

Electrical Compatibility: The SI4936ADY-T1-GE3 maintains critical electrical parameters: 30V Vdss rating, dual N-channel configuration, 3V gate threshold voltage, and 36mOhm on-state resistance. These parameters ensure functional equivalence in switching and amplification circuits designed for the TSM4936DCS RLG.

Physical Compatibility: Both components utilize identical 8-SOIC surface mount packaging with 0.154" (3.90mm) width, enabling direct PCB layout compatibility without redesign.

Parameter Deviations: The SI4936ADY-T1-GE3 exhibits lower continuous drain current (4.4A versus 5.9A), higher gate charge (20nC versus 13nC), and lower maximum power dissipation (1.1W versus 3W). These deviations require circuit-level evaluation to confirm suitability for specific application current and switching frequency requirements. Applications operating below 4.4A continuous drain current and with switching frequencies compatible with increased gate charge will experience no functional impact.

Frequently Asked Questions (FAQ)

Q: Can the SI4936ADY-T1-GE3 be used as a direct replacement for the TSM4936DCS RLG in all applications?

A: The SI4936ADY-T1-GE3 provides electrical and mechanical compatibility for applications operating within its specified limits. The lower continuous drain current (4.4A versus 5.9A) and reduced maximum power dissipation (1.1W versus 3W) require verification that circuit operating conditions remain within the substitute part's ratings. Applications with drain currents below 4.4A and thermal dissipation below 1.1W will experience no functional impact.

Q: Are the package dimensions identical between TSM4936DCS RLG and SI4936ADY-T1-GE3?

A: Both components use 8-SOIC surface mount packaging with identical dimensions of 0.154" width (3.90mm). PCB footprints and land patterns are directly compatible without modification.

Q: What is the significance of the higher gate charge in the SI4936ADY-T1-GE3?

A: The SI4936ADY-T1-GE3 specifies 20nC gate charge at 10V compared to 13nC for the TSM4936DCS RLG. Higher gate charge increases the energy required to switch the device and may increase switching losses in high-frequency applications. Circuit designs with switching frequencies below 1MHz will experience negligible impact.

Q: Do both parts meet the same compliance standards?

A: Both the TSM4936DCS RLG and SI4936ADY-T1-GE3 are ROHS3 compliant and operate across the identical temperature range of -55°C to 150°C (TJ). Compliance requirements are met by both components.

Q: Why is the TSM4936DCS RLG marked "Not For New Designs"?

A: The "Not For New Designs" status indicates that Taiwan Semiconductor Corporation has discontinued active development and support for this part. New circuit designs should utilize the SI4936ADY-T1-GE3 or equivalent active products to ensure long-term supply availability and manufacturer support.

Q: What is the difference between the Supplier Device Package designations (8-SOP versus 8-SOIC)?

A: The TSM4936DCS RLG is designated as 8-SOP (Small Outline Package) by the supplier, while the SI4936ADY-T1-GE3 is designated as 8-SOIC (Small Outline Integrated Circuit). Both designations refer to the same physical 8-pin surface mount package with identical 0.154" width and pin spacing. These terms are used interchangeably in the industry for this package type.

Q: Is the input capacitance specification critical for substitution?

A: The TSM4936DCS RLG specifies 610pF input capacitance at 15V, while the SI4936ADY-T1-GE3 does not provide this specification in the available data. Input capacitance affects switching speed and gate drive requirements. Applications sensitive to input capacitance variations should obtain complete SI4936ADY-T1-GE3 datasheet specifications from Vishay Siliconix for detailed comparison.

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