TSM4424CS RVG N-Channel MOSFET 20V 8A Equivalent & Substitute Parts

Part Overview

The TSM4424CS RVG is an N-Channel MOSFET manufactured by Taiwan Semiconductor Corporation, designed for surface mount applications requiring 20V drain-to-source voltage capability with 8A continuous drain current. This device is packaged in an 8-SOIC configuration and operates across an extended temperature range of -55°C to 150°C.

The TSM4424CS RVG has reached obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

TSM4424CS RVG

Taiwan Semiconductor CorporationIn Stock: 17867TSM4424CS RVG Datasheet

Current PartRFQ

SI4196DY-T1-GE3

Vishay SiliconixIn Stock: 22847SI4196DY-T1-GE3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the TSM4424CS RVG are identified based on strict electrical and mechanical parameter matching within the N-Channel MOSFET category. The substitution criteria are:

Electrical Parameters (Must Match or Exceed):

• Drain to Source Voltage (Vdss): 20V minimum
• Continuous Drain Current (Id) @ 25°C: 8A minimum
• Gate Threshold Voltage (Vgs(th)): 1V maximum @ 250µA
• Maximum Gate Voltage (Vgs): ±8V minimum
• Operating Temperature Range: -55°C to 150°C minimum

Mechanical Parameters (Must Match):

• Package Type: 8-SOIC surface mount configuration
• Package Dimensions: 0.154" width, 3.90mm width standard

Compliance Parameters (Must Match or Exceed):

• RoHS3 Compliance required
• ECCN: EAR99 classification

The SI4196DY-T1-GE3 from Vishay Siliconix meets all substitution criteria and is classified as an active product with enhanced availability.

Parameter Comparison

Engineering Selection Recommendations

The SI4196DY-T1-GE3 is a direct functional substitute for the TSM4424CS RVG based on the following engineering criteria:

Product Status Consideration: The TSM4424CS RVG is classified as obsolete, while the SI4196DY-T1-GE3 maintains active product status with confirmed inventory availability (22,790 pieces in stock versus 17,836 pieces for the obsolete part). Active product status ensures continued supply chain support and manufacturing consistency.

Compliance Alignment: Both devices maintain ROHS3 compliance and EAR99 ECCN classification, ensuring regulatory compatibility across applications. The SI4196DY-T1-GE3 achieves MSL Level 1 (Unlimited) compared to MSL Level 3 (168 Hours) for the original part, providing superior moisture handling characteristics during storage and assembly operations.

Electrical Parameter Equivalence: The substitute part meets or exceeds all critical electrical specifications. The SI4196DY-T1-GE3 demonstrates improved on-resistance performance (27 mOhm versus 30 mOhm), reducing power dissipation in switching applications. The main part exhibits lower gate charge (11.2 nC versus 22 nC) and input capacitance (500 pF versus 830 pF), which may be relevant for high-frequency switching circuits.

Mechanical Compatibility: Both devices utilize identical 8-SOIC surface mount packaging with matching footprint dimensions (0.154" width, 3.90mm), enabling direct PCB layout compatibility without redesign.

Frequently Asked Questions (FAQ)

Q: Can the SI4196DY-T1-GE3 be used as a direct replacement for the TSM4424CS RVG on existing PCBs?

A: Yes. Both devices share identical 8-SOIC package dimensions and pinout configuration. No PCB layout modifications are required for mechanical or electrical interface compatibility.

Q: What are the key electrical differences between these two MOSFETs?

A: The SI4196DY-T1-GE3 provides lower on-resistance (27 mOhm versus 30 mOhm), resulting in reduced conduction losses. The TSM4424CS RVG exhibits lower gate charge and input capacitance, which may provide advantages in high-frequency switching applications. Both devices maintain identical voltage ratings (20V Vdss) and current ratings (8A Id).

Q: Why is the substitute part's gate charge specification higher?

A: The SI4196DY-T1-GE3 gate charge is specified at 8V gate voltage, while the TSM4424CS RVG specification is at 4.5V. Gate charge increases with applied gate voltage. This difference reflects different measurement conditions rather than inferior switching performance.

Q: Does the higher input capacitance of the SI4196DY-T1-GE3 affect circuit performance?

A: Input capacitance affects gate drive requirements and switching speed. The SI4196DY-T1-GE3 exhibits 830 pF versus 500 pF for the original part. Applications requiring minimal gate drive current or operating at very high switching frequencies should evaluate this parameter against specific circuit requirements.

Q: What is the significance of the MSL rating difference?

A: The TSM4424CS RVG carries MSL Level 3 (168 hours), requiring controlled moisture exposure during storage and assembly. The SI4196DY-T1-GE3 carries MSL Level 1 (Unlimited), eliminating moisture sensitivity constraints. This provides operational flexibility in manufacturing environments without specialized dry storage requirements.

Q: Are there any supply chain advantages to using the SI4196DY-T1-GE3?

A: The SI4196DY-T1-GE3 maintains active product status with higher current inventory levels (22,790 pieces). The TSM4424CS RVG is classified as obsolete, indicating discontinued manufacturing and declining availability. Active product status ensures consistent long-term supply and manufacturing support.

Q: Do both devices meet the same regulatory and compliance standards?

A: Yes. Both the TSM4424CS RVG and SI4196DY-T1-GE3 are ROHS3 compliant and classified under ECCN EAR99. They share identical HTSUS tariff classification (8541.29.0095), ensuring equivalent regulatory treatment in procurement and export scenarios.