TSM3N80CP ROG Equivalent & Substitute Parts

Part Overview

The TSM3N80CP ROG is an N-Channel MOSFET rated for 800V drain-to-source voltage with 3A continuous drain current in a surface mount TO-252 (DPAK) package. Manufactured by Taiwan Semiconductor Corporation, this device is classified as obsolete. Due to its obsolete status and limited ongoing availability, identifying equivalent substitute components is necessary for design continuity and procurement planning. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating the same or compatible package footprint.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	3	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	4.2 Ohm @ 1.5A, 10V	Ohm
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	19	nC @ 10V
Power Dissipation (Max)	94	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252 (DPAK)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the TSM3N80CP ROG is determined by the following critical parameters:

Mandatory Matching Parameters:

Drain to Source Voltage (Vdss): 800V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package Type: TO-252 (DPAK) surface mount configuration
Operating Temperature Range: -55°C to 150°C

Allowable Variation Parameters:

Continuous Drain Current (Id): Substitute must equal or exceed 3A
Rds On (Max): Substitute must equal or be lower than 4.2 Ohm
Gate Charge (Qg): Substitute must equal or be lower than 19 nC
Power Dissipation: Substitute must equal or exceed 94W
Gate Threshold Voltage (Vgs(th)): Substitute must be within ±30V maximum gate voltage specification

The two identified substitute parts meet these criteria with the following considerations:

IPD80R4K5P7ATMA1 (Infineon Technologies): Matches 800V Vdss and TO-252 package. Continuous drain current is 1.5A, which is lower than the main part specification. This part is suitable for applications requiring reduced current capacity.

STD3NK80ZT4 (STMicroelectronics): Matches 800V Vdss, 2.5A continuous drain current, and TO-252 package. This part provides current capacity closer to the main part specification while maintaining electrical compatibility.

Parameter Comparison

Parameter	TSM3N80CP ROG (Main)	IPD80R4K5P7ATMA1 (Infineon)	STD3NK80ZT4 (STMicroelectronics)
Manufacturer	Taiwan Semiconductor Corporation	Infineon Technologies	STMicroelectronics
Drain to Source Voltage (Vdss)	800 V	800 V	800 V
Continuous Drain Current (Id) @ 25°C	3 A	1.5 A	2.5 A
Drive Voltage (Max Rds On)	10 V	10 V	10 V
Rds On (Max) @ Id, Vgs	4.2 Ohm @ 1.5A, 10V	4.5 Ohm @ 400mA, 10V	4.5 Ohm @ 1.25A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4 V @ 250µA	3.5 V @ 200µA	4.5 V @ 50µA
Gate Charge (Qg) @ Vgs	19 nC @ 10V	4 nC @ 10V	19 nC @ 10V
Power Dissipation (Max)	94 W	13 W	70 W
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Package Type	TO-252 (DPAK)	PG-TO252-3	DPAK
Product Status	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (Highest Compatibility):

The STD3NK80ZT4 from STMicroelectronics is the preferred substitute. It maintains the 800V Vdss rating, provides 2.5A continuous drain current (closest to the 3A specification), and is housed in a compatible DPAK package. The part is currently in active production status with 19,990 units in stock, ensuring long-term availability. It carries ROHS3 compliance and meets the same operating temperature range as the main part.

For Current-Limited Applications:

The IPD80R4K5P7ATMA1 from Infineon Technologies is suitable for applications where the circuit design can accommodate a reduced continuous drain current of 1.5A. This part features significantly lower gate charge (4 nC versus 19 nC), which may provide switching speed advantages in specific circuit topologies. It is also in active production with ROHS3 compliance.

Compliance Considerations:

Both substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the regulatory profile of the obsolete main part. Both operate across the full -55°C to 150°C temperature range required for the application.

Frequently Asked Questions (FAQ)

Q: Can the IPD80R4K5P7ATMA1 be used as a direct replacement for the TSM3N80CP ROG?

A: The IPD80R4K5P7ATMA1 is electrically compatible in terms of voltage rating and package type. However, its continuous drain current rating of 1.5A is lower than the main part's 3A specification. It is suitable only for applications where the circuit design operates at or below 1.5A continuous drain current.

Q: What is the primary advantage of the STD3NK80ZT4 over the IPD80R4K5P7ATMA1?

A: The STD3NK80ZT4 provides a continuous drain current of 2.5A, which is closer to the main part's 3A rating. It also delivers higher power dissipation capability (70W versus 13W), making it more suitable for applications requiring higher thermal performance.

Q: Are both substitute parts available in the same package as the original TSM3N80CP ROG?

A: Both substitute parts use compatible TO-252 (DPAK) surface mount packages. The IPD80R4K5P7ATMA1 is designated as PG-TO252-3, and the STD3NK80ZT4 is designated as DPAK. These designations refer to the same physical package footprint and pin configuration, ensuring PCB compatibility.

Q: What is the significance of the gate charge difference between the main part and substitutes?

A: Gate charge (Qg) affects switching speed and gate drive requirements. The IPD80R4K5P7ATMA1 has a gate charge of 4 nC compared to 19 nC for both the main part and the STD3NK80ZT4. Lower gate charge typically results in faster switching transitions, which may be advantageous or disadvantageous depending on the circuit design and EMI considerations.

Q: Are there any moisture sensitivity differences between the main part and substitutes?

A: The main part (TSM3N80CP ROG) has a Moisture Sensitivity Level (MSL) of 3 (168 hours). Both substitute parts have an MSL of 1 (unlimited), indicating superior moisture resistance and less stringent handling requirements during storage and assembly.

Q: Can I use either substitute part interchangeably in my design?

A: Interchangeability depends on your circuit's current requirements. If your design operates at 2.5A or below, the STD3NK80ZT4 is fully interchangeable. If your design operates at 1.5A or below, the IPD80R4K5P7ATMA1 is also suitable. For designs requiring the full 3A capability, only the STD3NK80ZT4 approaches the original specification.

Q: What is the difference in Rds On between the main part and substitutes?

A: The main part specifies Rds On (Max) of 4.2 Ohm at 1.5A and 10V. The IPD80R4K5P7ATMA1 specifies 4.5 Ohm at 400mA and 10V, while the STD3NK80ZT4 specifies 4.5 Ohm at 1.25A and 10V. These specifications are measured at different current levels, so direct comparison requires evaluation at your specific operating point.

Q: Are both substitute parts in active production?

A: Yes. The STD3NK80ZT4 is in active production with 19,990 units in stock. The IPD80R4K5P7ATMA1 is also in active production with 760 units in stock. Both parts have confirmed long-term availability compared to the obsolete main part.

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