Equivalent & Substitute Parts Reference: TSM3N100CP ROG

Part Overview

TSM3N100CP ROG is an N-Channel MOSFET with a rated drain-to-source voltage of 1000V and a continuous drain current of 2.5A, presented in a surface-mount TO-252 (DPAK) package. The part is currently discontinued at Digi-Key, though some inventory remains. Due to its discontinuation, it is necessary to identify substitute models that closely match its electrical and mechanical specifications for ongoing designs or replacement needs within the transistors, FETs, MOSFETs category.

Substiute Parts

TSM3N100CP ROG
Taiwan Semiconductor CorporationIn Stock: 799TSM3N100CP ROG Datasheet
TSM3N100CP ROG
Current Part
STD3NK100Z
STMicroelectronicsIn Stock: 5223STD3NK100Z Datasheet
STD3NK100Z
Direct

Key Parameters

ParameterTSM3N100CP ROG
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds664 pF @ 25 V
Power Dissipation (Max)99W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (DPAK)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
RoHS StatusROHS3 Compliant
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095

Substitute Part Grouping Explanation

Substitution is strictly based on matching the core electrical and mechanical parameters: FET type, technology, Drain-to-Source Voltage (Vdss), Continuous Drain Current (Id) at 25°C, Drive Voltage, Rds On (Max), Vgs(th) (Max), Gate Charge, Vgs (Max), Input Capacitance (Ciss), Power Dissipation, Operating Temperature Range, Mounting Type, package type, and compliance certifications. Only parts matching these parameters are considered direct equivalents and substitutes.

Parameter Comparison

Parameter TSM3N100CP ROG STD3NK100Z
FET TypeN-ChannelN-Channel
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V1000 V
Current Continuous Drain (Id) @ 25°C2.5A (Tc)2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V10V
Rds On (Max) @ Id, Vgs6Ohm @ 1.25A, 10V6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V18 nC @ 10 V
Vgs (Max)±30 V±30 V
Input Capacitance (Ciss) (Max) @ Vds664 pF @ 25 V601 pF @ 25 V
Power Dissipation (Max)99W (Tc)90W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting TypeSurface MountSurface Mount
Supplier Device PackageTO-252 (DPAK)DPAK
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63TO-252-3, DPAK (2 Leads + Tab), SC-63
RoHS StatusROHS3 CompliantROHS3 Compliant
REACH StatusREACH UnaffectedREACH Unaffected
ECCNEAR99EAR99
HTSUS8541.29.00958541.29.0095

Engineering Selection Recommendations

The main part, TSM3N100CP ROG, is discontinued at Digi-Key, while the substitute STD3NK100Z is active and available in stock. Both parts are ROHS3 compliant and unaffected by REACH status, with identical package, mounting type, and classification parameters. Substitution is appropriate strictly based on product status and compliance equivalence.

Frequently Asked Questions (FAQ)

Q1: What are the critical parameters for MOSFET substitution in this category?
A1: The critical parameters are FET type, MOSFET technology, Drain-to-Source Voltage (Vdss), Continuous Drain Current (Id), Drive Voltage, Rds On (Max), Vgs(th) (Max), Gate Charge, Vgs (Max), Input Capacitance (Ciss), Power Dissipation, Operating Temperature Range, mounting type, and package form factor.

Q2: Is STD3NK100Z compatible with same footprint and pad layout as TSM3N100CP ROG?
A2: Both parts utilize the TO-252-3, DPAK (2 Leads + Tab), SC-63 package and are intended for surface mount applications.

Q3: Are there environmental or compliance differences that affect substitution?
A3: Both TSM3N100CP ROG and STD3NK100Z are ROHS3 compliant and REACH unaffected, with ECCN EAR99, satisfying environmental and compliance requirements for direct substitution.

Q4: How are substitute parts selected for discontinued MOSFETs?
A4: Substitute parts are matched strictly on shared electrical ratings, mechanical dimensions, compliance certifications, and product availability within the same product and package category.

Q5: Can the substitute be used in all applications of the original?
A5: Substitution is based solely on provided parameters including package, mounting, and electrical ratings. Compatibility with the intended application is determined strictly by these matched specifications.

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