TSM2NB65CP ROG N-Channel MOSFET 650V 2A TO-252 Equivalent & Substitute Parts

Part Overview

The TSM2NB65CP ROG is an N-Channel MOSFET rated for 650V drain-to-source voltage with 2A continuous drain current in a surface mount TO-252 (DPAK) package. Manufactured by Taiwan Semiconductor Corporation, this device is classified as obsolete product status. Due to its obsolescence, identifying equivalent and substitute parts from active manufacturers is necessary to maintain design continuity and ensure long-term component availability for new production runs and field replacements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	650	V
Current - Continuous Drain (Id) @ 25°C	2	A
Rds On (Max) @ Id, Vgs	5	Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13	nC @ 10V
Power Dissipation (Max)	65	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the TSM2NB65CP ROG is determined by the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V minimum
Current - Continuous Drain (Id) @ 25°C: 2A minimum
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Allowable Variation Parameters:

Rds On (Max): Lower values are acceptable (improved performance)
Gate Charge (Qg): Lower values are acceptable (improved switching characteristics)
Power Dissipation (Max): Equal or higher values are acceptable
Operating Temperature Range: Equal or wider ranges are acceptable
Vgs(th) and Input Capacitance: Variations within typical device specifications are acceptable

The three substitute parts identified (IXTY2N65X2, STD2LN60K3, STD6N65M2) meet the mandatory electrical and mechanical criteria. All are N-Channel MOSFETs in TO-252 DPAK packages with active product status and RoHS3 compliance.

Parameter Comparison

Parameter	TSM2NB65CP ROG	IXTY2N65X2	STD2LN60K3	STD6N65M2
Manufacturer	Taiwan Semiconductor Corporation	IXYS	STMicroelectronics	STMicroelectronics
Product Status	Obsolete	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	650 V	650 V	600 V	650 V
Current - Continuous Drain (Id) @ 25°C	2 A	2 A	2 A	4 A
Rds On (Max) @ Id, Vgs	5 Ohm @ 1A, 10V	2.3 Ohm @ 1A, 10V	4.5 Ohm @ 1A, 10V	1.35 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4 V @ 250µA	5 V @ 250µA	4.5 V @ 50µA	4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10V	4.3 nC @ 10V	12 nC @ 10V	9.8 nC @ 10V
Power Dissipation (Max)	65 W	55 W	45 W	60 W
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

IXTY2N65X2 (IXYS Ultra X2 Series)

The IXTY2N65X2 is an active product with identical voltage and current ratings to the TSM2NB65CP ROG. This device features superior on-resistance (2.3 Ohm vs. 5 Ohm) and significantly lower gate charge (4.3 nC vs. 13 nC), resulting in improved switching efficiency and reduced power dissipation. The device maintains full RoHS3 compliance and operates across the same temperature range. Moisture sensitivity is improved to MSL 1. This substitute is suitable for direct replacement in applications where thermal performance and switching speed are design considerations.

STD2LN60K3 (STMicroelectronics SuperMESH3™)

The STD2LN60K3 is an active product with 600V drain-to-source voltage, which is 50V lower than the TSM2NB65CP ROG. This device is suitable for applications where the 650V rating is not a critical requirement. The STD2LN60K3 offers comparable on-resistance (4.5 Ohm vs. 5 Ohm) and gate charge (12 nC vs. 13 nC). Power dissipation is lower at 45W. RoHS3 compliance and MSL 1 rating are maintained. This substitute is appropriate for cost-optimized designs operating at voltages below 600V.

STD6N65M2 (STMicroelectronics MDmesh™)

The STD6N65M2 is an active product with matching 650V drain-to-source voltage and superior electrical characteristics. This device is rated for 4A continuous drain current, providing 2x the current capability of the TSM2NB65CP ROG. On-resistance is significantly lower (1.35 Ohm vs. 5 Ohm), and gate charge is reduced (9.8 nC vs. 13 nC). The device maintains full RoHS3 compliance and MSL 1 rating. This substitute is suitable for applications requiring higher current capacity or improved thermal performance within the same voltage class.

All three substitute parts are from active manufacturers with established supply chains, RoHS3 compliance, and unlimited moisture sensitivity ratings, ensuring long-term availability and regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can the IXTY2N65X2 be used as a direct replacement for the TSM2NB65CP ROG?

A: Yes. Both devices are N-Channel MOSFETs with 650V Vdss rating, 2A continuous drain current, and identical TO-252 DPAK packaging. The IXTY2N65X2 features improved electrical characteristics with lower on-resistance and gate charge. Pin configuration and package dimensions are compatible.

Q: What is the key difference between the STD2LN60K3 and the TSM2NB65CP ROG?

A: The STD2LN60K3 has a 600V drain-to-source voltage rating compared to 650V for the TSM2NB65CP ROG. Both devices share identical 2A continuous drain current and TO-252 DPAK packaging. The STD2LN60K3 is suitable for applications operating at voltages up to 600V.

Q: Why does the STD6N65M2 have a higher current rating than the TSM2NB65CP ROG?

A: The STD6N65M2 is rated for 4A continuous drain current versus 2A for the TSM2NB65CP ROG. This higher current capability results from improved semiconductor design and lower on-resistance (1.35 Ohm vs. 5 Ohm). Both devices operate at 650V and use the same TO-252 DPAK package.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXTY2N65X2, STD2LN60K3, and STD6N65M2 are all RoHS3 compliant, matching the compliance status of the TSM2NB65CP ROG.

Q: What does MSL 1 (Unlimited) mean compared to MSL 3 (168 Hours)?

A: Moisture Sensitivity Level (MSL) indicates the maximum time a component can be exposed to moisture before soldering. MSL 1 (Unlimited) allows indefinite storage without moisture control, while MSL 3 (168 Hours) requires moisture control and limits storage to 168 hours after opening. All substitute parts have MSL 1 ratings, providing superior storage flexibility.

Q: Can the STD6N65M2 be used in applications designed for 2A operation?

A: Yes. The STD6N65M2 is rated for 4A continuous drain current, which exceeds the 2A requirement of the TSM2NB65CP ROG. The device operates safely at lower current levels. The improved on-resistance and lower gate charge provide enhanced performance in 2A applications.

Q: Are the operating temperature ranges identical across all parts?

A: The TSM2NB65CP ROG, IXTY2N65X2, and STD6N65M2 all operate from -55°C to 150°C. The STD2LN60K3 operates to 150°C maximum junction temperature. All devices support the full industrial temperature range.

Q: What is the significance of lower gate charge in the substitute parts?

A: Lower gate charge (Qg) reduces the energy required to switch the MOSFET on and off, resulting in lower switching losses, reduced heat generation, and improved overall circuit efficiency. The IXTY2N65X2 (4.3 nC) and STD6N65M2 (9.8 nC) both offer reduced gate charge compared to the TSM2NB65CP ROG (13 nC).

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