TSM2N100CP ROG Equivalent & Substitute Parts

Part Overview

The TSM2N100CP ROG is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 1.85A continuous drain current in a surface mount TO-252 (DPAK) package. This device is classified as obsolete, necessitating identification of active equivalent components for ongoing design requirements and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating the surface mount form factor.

Substiute Parts

TSM2N100CP ROG
Taiwan Semiconductor CorporationIn Stock: 1022TSM2N100CP ROG Datasheet
TSM2N100CP ROG
Current Part
IXTY1R6N100D2
IXYSIn Stock: 2476IXTY1R6N100D2 Datasheet
IXTY1R6N100D2
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 1.85 A (Tc)
Rds On (Max) @ Id, Vgs 8.5 @ 900mA, 10V Ohm
Power Dissipation (Max) 77 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the TSM2N100CP ROG is determined by the following critical parameters:

Voltage Rating Compatibility: The substitute part must maintain a Drain to Source Voltage (Vdss) rating of 1000V to ensure equivalent voltage withstand capability.

Current Handling: The substitute part must support continuous drain current (Id) at or above 1.85A at 25°C to accommodate the original design current requirements.

Package Compatibility: The substitute part must utilize the TO-252 (DPAK) surface mount package to ensure mechanical and thermal interface compatibility with existing PCB layouts.

Technology Type: The substitute part must be an N-Channel MOSFET to maintain circuit functionality and gate drive compatibility.

Thermal Performance: The substitute part must support the operating temperature range of -55°C to 150°C (TJ) to function across the specified environmental conditions.

Regulatory Compliance: The substitute part must maintain ROHS3 compliance and REACH unaffected status to satisfy supply chain and environmental requirements.

The IXTY1R6N100D2 meets these substitution criteria with equivalent voltage and package specifications, though with reduced continuous drain current (1.6A versus 1.85A) and different on-resistance characteristics.

Parameter Comparison

Parameter TSM2N100CP ROG IXTY1R6N100D2 Unit
Manufacturer Taiwan Semiconductor Corporation IXYS
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 1000 V
Current - Continuous Drain (Id) @ 25°C 1.85 1.6 A (Tc)
Rds On (Max) @ Id, Vgs 8.5 @ 900mA, 10V 10 @ 800mA, 0V Ohm
Gate Charge (Qg) (Max) @ Vgs 17 @ 10V 27 @ 5V nC
Vgs (Max) ±30 ±20 V
Input Capacitance (Ciss) (Max) @ Vds 625 @ 25V 645 @ 25V pF
Power Dissipation (Max) 77 100 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252-3, DPAK (2 Leads + Tab), SC-63
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Product Status Consideration: The TSM2N100CP ROG is classified as obsolete, making the IXTY1R6N100D2 the appropriate selection for new designs and production continuity. The IXTY1R6N100D2 maintains active product status with established supply chain availability.

Regulatory Compliance: Both components satisfy ROHS3 compliance and REACH unaffected requirements, ensuring compatibility with current environmental and supply chain regulations.

Current Rating Differential: The IXTY1R6N100D2 provides 1.6A continuous drain current compared to the original 1.85A specification. Applications operating at or below 1.6A continuous current are directly compatible. Applications requiring the full 1.85A rating require thermal and circuit analysis to confirm suitability.

On-Resistance Characteristics: The IXTY1R6N100D2 exhibits 10Ohm on-resistance at 800mA and 0V gate-source voltage, compared to 8.5Ohm at 900mA and 10V for the original part. Power dissipation calculations must account for these differences in switching and conduction losses.

Thermal Performance: The IXTY1R6N100D2 supports 100W maximum power dissipation compared to 77W for the original part, providing improved thermal headroom in the TO-252 package.

Gate Drive Voltage: The IXTY1R6N100D2 operates with a maximum gate-source voltage of ±20V compared to ±30V for the original part. Existing gate drive circuits must operate within the ±20V constraint.

Frequently Asked Questions (FAQ)

Q: Can the IXTY1R6N100D2 directly replace the TSM2N100CP ROG in all applications?

A: Direct replacement is possible for applications operating at continuous drain currents of 1.6A or below. Applications requiring the full 1.85A rating require circuit analysis to confirm thermal and electrical compatibility. The reduced on-resistance and increased power dissipation rating of the IXTY1R6N100D2 may provide operational advantages in many designs.

Q: What is the significance of the different on-resistance specifications between these parts?

A: The TSM2N100CP ROG specifies 8.5Ohm on-resistance at 900mA and 10V gate-source voltage, while the IXTY1R6N100D2 specifies 10Ohm at 800mA and 0V gate-source voltage. These measurements occur at different bias points. The IXTY1R6N100D2 measurement at 0V gate-source voltage reflects depletion mode operation. Power dissipation calculations must use the on-resistance values corresponding to the actual operating conditions in the target circuit.

Q: Are the package dimensions identical between these components?

A: Both components utilize the TO-252-3 DPAK (2 Leads + Tab) SC-63 package. Physical dimensions and PCB footprints are compatible, allowing direct board-level substitution without layout modifications.

Q: What is the impact of the gate charge difference on circuit performance?

A: The IXTY1R6N100D2 exhibits 27nC gate charge at 5V compared to 17nC at 10V for the TSM2N100CP ROG. Higher gate charge increases gate drive current requirements and switching transition times. Gate drive circuits must supply sufficient current to charge the gate within the required switching time window.

Q: How does the maximum gate-source voltage difference affect circuit design?

A: The IXTY1R6N100D2 is rated for ±20V maximum gate-source voltage compared to ±30V for the original part. Existing gate drive circuits must operate within the ±20V constraint. Circuits applying gate voltages exceeding ±20V require modification to protect the substitute component.

Q: What compliance certifications apply to both components?

A: Both the TSM2N100CP ROG and IXTY1R6N100D2 are ROHS3 compliant and REACH unaffected, satisfying current environmental and supply chain regulatory requirements.

Q: Is the IXTY1R6N100D2 available in the same packaging format?

A: The IXTY1R6N100D2 is supplied in tube packaging, while the original part inventory status does not specify packaging format. Both components use the identical TO-252-3 DPAK surface mount package for component-level compatibility.

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