TSM180P03CS Equivalent & Substitute Parts

Part Overview

The TSM180P03CS is an active P-Channel MOSFET manufactured by Taiwan Semiconductor Corporation, rated for 30V drain-to-source voltage and 10A continuous drain current at 25°C. This device is packaged in an 8-SOIC surface mount configuration and is designed for power switching applications requiring compact form factors and reliable performance in industrial and consumer electronics.

Equivalent and substitute parts are identified to provide design flexibility, accommodate supply chain variations, and support applications where alternative manufacturers' components meet or exceed the electrical and mechanical specifications of the primary device.

Substiute Parts

TSM180P03CS

Taiwan Semiconductor CorporationIn Stock: 3347TSM180P03CS Datasheet

Current PartRFQ

SI4835DDY-T1-E3

Vishay SiliconixIn Stock: 10247SI4835DDY-T1-E3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the TSM180P03CS are identified based on strict electrical and mechanical parameter alignment. The following criteria determine substitution eligibility:

Electrical Compatibility Parameters:

• FET Type: P-Channel (required match)
• Drain to Source Voltage (Vdss): 30V minimum (equal or higher acceptable)
• Continuous Drain Current (Id): 10A minimum at 25°C (equal or higher acceptable)
• On-State Resistance (Rds On): 18 mOhm maximum @ specified conditions (equal or lower acceptable)
• Gate Threshold Voltage (Vgs(th)): Within compatible operating range
• Power Dissipation: 2.5W minimum (equal or higher acceptable)
• Operating Temperature: 150°C maximum junction temperature (equal or higher acceptable)

Mechanical Compatibility Parameters:

• Package Type: 8-SOIC surface mount (exact match required)
• Package Dimensions: 0.154" × 3.90mm width (exact match required)
• Mounting Type: Surface mount (exact match required)

Regulatory Compliance:

• RoHS3 Compliant status (required match)
• REACH Unaffected status (required match)

The SI4835DDY-T1-E3 meets all substitution criteria and is classified as a direct equivalent for the TSM180P03CS.

Parameter Comparison

Engineering Selection Recommendations

TSM180P03CS (Primary Device)

The TSM180P03CS is an active product with full RoHS3 compliance and REACH unaffected status. This device is suitable for applications requiring a 30V, 10A P-Channel MOSFET in an 8-SOIC package. The part maintains active inventory status with 3270 units available.

SI4835DDY-T1-E3 (Substitute Device)

The SI4835DDY-T1-E3 is an active product manufactured by Vishay Siliconix with equivalent RoHS3 compliance and REACH unaffected status. This device meets all electrical and mechanical substitution criteria for the TSM180P03CS. The substitute device provides higher continuous drain current (13A versus 10A), higher power dissipation capability (5.6W Tc versus 2.5W Tc), and extended operating temperature range (-55°C to 150°C versus 150°C maximum). The 8-SOIC package dimensions are identical. Inventory availability is 10200 units.

Both devices are suitable for direct substitution in applications where the TSM180P03CS specifications are required. Selection between the two devices depends on supply chain availability, cost considerations, and application-specific thermal management requirements.

Frequently Asked Questions (FAQ)

Q: Can the SI4835DDY-T1-E3 be used as a direct replacement for the TSM180P03CS?

A: Yes. The SI4835DDY-T1-E3 meets all electrical and mechanical substitution criteria. Both devices are P-Channel MOSFETs rated for 30V Vdss, feature identical 8-SOIC package dimensions, and maintain equivalent RoHS3 and REACH compliance status. The substitute device meets or exceeds all key electrical parameters of the primary device.

Q: What are the differences in electrical performance between these devices?

A: The SI4835DDY-T1-E3 provides higher continuous drain current (13A versus 10A), higher power dissipation capability (5.6W Tc versus 2.5W Tc), higher gate voltage rating (±25V versus ±20V), and extended operating temperature range (-55°C to 150°C versus 150°C maximum). On-state resistance is equivalent at 18 mOhm. Gate charge is higher in the substitute device (65 nC @ 10V versus 14.6 nC @ 4.5V), measured at different gate voltage conditions.

Q: Are the packages physically identical?

A: Yes. Both devices use the 8-SOIC package with identical dimensions of 0.154" × 3.90mm width. Pin-to-pin compatibility is maintained, allowing direct PCB layout substitution without modification.

Q: Do both devices meet regulatory requirements?

A: Yes. Both the TSM180P03CS and SI4835DDY-T1-E3 are RoHS3 compliant and REACH unaffected. Both devices maintain active product status with full manufacturer support.

Q: What is the difference in gate charge between these devices?

A: The TSM180P03CS has a gate charge of 14.6 nC measured at 4.5V gate voltage. The SI4835DDY-T1-E3 has a gate charge of 65 nC measured at 10V gate voltage. Gate charge values are measured at different gate voltage conditions and reflect the different device designs. Higher gate charge may result in slightly longer switching times depending on gate drive circuit characteristics.

Q: Which device should be selected for new designs?

A: Selection depends on application requirements and supply chain considerations. The SI4835DDY-T1-E3 offers higher current capability and power dissipation headroom, making it suitable for applications with higher thermal or current demands. The TSM180P03CS is appropriate for applications with lower current requirements. Both devices are active products with established supply chains.