TSM180N03CS Equivalent & Substitute Parts

Part Overview

The TSM180N03CS is an N-Channel power MOSFET manufactured by Taiwan Semiconductor Corporation, designed for surface mount applications in 8-SOIC packaging. This device operates at 30V drain-to-source voltage with a continuous drain current rating of 9A at 25°C and maximum power dissipation of 2.5W. The part is currently in active production status with RoHS3 compliance and REACH unaffected classification. Equivalent and substitute parts are identified to provide design flexibility, support supply chain continuity, and accommodate specific application requirements where alternative electrical or thermal characteristics may be beneficial.

Substiute Parts

TSM180N03CS

Taiwan Semiconductor CorporationIn Stock: 28137TSM180N03CS Datasheet

Current PartRFQ

SI4800BDY-T1-GE3

Vishay SiliconixIn Stock: 55369SI4800BDY-T1-GE3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the TSM180N03CS are identified based on strict electrical and mechanical parameter compatibility within the N-Channel power MOSFET category. The substitution logic is based on the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
• Package Type: Must be 8-SOIC (0.154", 3.90mm Width) for mechanical interchangeability
• FET Type: N-Channel MOSFET technology
• On-Resistance (Rds On): Must be within acceptable range for the application
• Gate Threshold Voltage: Must support standard gate drive voltages
• Surface Mount Mounting Type: Required for PCB assembly compatibility

Compliance Requirements:

• RoHS3 Compliance: Required for regulatory alignment
• Active Product Status: Ensures ongoing manufacturer support and availability

The SI4800BDY-T1-GE3 meets these substitution criteria with matching voltage rating, identical package geometry, and compatible electrical characteristics within the specified parameter ranges.

Parameter Comparison

Engineering Selection Recommendations

TSM180N03CS Selection: The TSM180N03CS is the primary choice when maximum continuous drain current of 9A and higher power dissipation capability (2.5W) are required. This device is suitable for applications demanding higher current handling at the specified voltage rating. The part is in active production with full RoHS3 compliance and REACH unaffected status, ensuring regulatory compliance and supply chain stability.

SI4800BDY-T1-GE3 Selection: The SI4800BDY-T1-GE3 serves as a substitute when lower continuous drain current (6.5A) is acceptable and reduced power dissipation (1.3W) is beneficial for thermal management. This device features an extended operating temperature range (-55°C to 150°C) compared to the TSM180N03CS (150°C maximum), providing additional flexibility for temperature-sensitive applications. The SI4800BDY-T1-GE3 is manufactured by Vishay Siliconix under the TrenchFET® series designation and maintains RoHS3 compliance with active product status.

Substitution Feasibility: Both devices share identical drain-to-source voltage rating (30V), matching 8-SOIC package geometry, and compatible on-resistance characteristics. The primary design consideration is the difference in continuous drain current rating and power dissipation capability. Applications operating below 6.5A continuous drain current can utilize either device. Applications requiring the full 9A rating must use the TSM180N03CS.

Frequently Asked Questions (FAQ)

Q: Can the SI4800BDY-T1-GE3 directly replace the TSM180N03CS in all applications?

A: Direct replacement is possible only in applications where the continuous drain current requirement does not exceed 6.5A. Both devices share identical 30V voltage rating and 8-SOIC package dimensions, ensuring mechanical and electrical compatibility at the board level. Applications requiring the full 9A continuous drain current rating of the TSM180N03CS cannot use the SI4800BDY-T1-GE3 as a substitute.

Q: What are the key electrical differences between these two devices?

A: The primary differences are continuous drain current (TSM180N03CS: 9A versus SI4800BDY-T1-GE3: 6.5A) and power dissipation (TSM180N03CS: 2.5W versus SI4800BDY-T1-GE3: 1.3W). On-resistance values are nearly identical (18 mOhm versus 18.5 mOhm). Gate charge differs significantly (4.1 nC versus 13 nC), which affects gate drive circuit design and switching speed characteristics.

Q: Are both devices pin-compatible?

A: Yes. Both devices use the 8-SOIC package with identical 0.154" (3.90mm) width specification. Pin-to-pin compatibility is confirmed for direct PCB layout substitution without redesign.

Q: What compliance certifications apply to both devices?

A: Both the TSM180N03CS and SI4800BDY-T1-GE3 are RoHS3 compliant and maintain active product status. The TSM180N03CS carries REACH unaffected classification. The SI4800BDY-T1-GE3 has REACH information available upon request from the manufacturer.

Q: Does the SI4800BDY-T1-GE3 offer any advantages over the TSM180N03CS?

A: The SI4800BDY-T1-GE3 provides an extended operating temperature range (-55°C to 150°C versus 150°C maximum for the TSM180N03CS), enabling use in wider temperature environments. Lower power dissipation (1.3W) reduces thermal management requirements in current-limited applications. Higher maximum gate voltage rating (±25V versus ±20V) provides additional gate drive flexibility.

Q: What is the impact of different gate charge specifications?

A: The TSM180N03CS exhibits lower gate charge (4.1 nC @ 4.5V) compared to the SI4800BDY-T1-GE3 (13 nC @ 5V). Lower gate charge enables faster switching transitions and reduces gate drive circuit power consumption. Applications with high-frequency switching or limited gate drive current capacity benefit from the lower gate charge characteristic of the TSM180N03CS.

Q: Can these devices be used interchangeably in high-current applications?

A: No. Applications requiring continuous drain current above 6.5A must use the TSM180N03CS. The SI4800BDY-T1-GE3 is rated for maximum 6.5A continuous drain current and cannot be substituted in higher-current designs.