TSM110NB04LCV Equivalent & Substitute Parts Reference

Part Overview

TSM110NB04LCV is an active, single N-channel power MOSFET produced by Taiwan Semiconductor Corporation, categorized under Transistors, FETs, MOSFETs. It is suitable for surface mount applications and features a 40V voltage rating, a continuous drain current of up to 44A (Tc), and low on-resistance. Identification of parametric equivalent or substitute models is critical to ensure supply chain continuity and maintain design reliability when the main part is unavailable or to fulfill inventory requirements.

Key Parameters

Parameter	Value
Manufacturer	Taiwan Semiconductor Corporation
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	11mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1329 pF @ 20V
Power Dissipation (Max)	1.9W (Ta), 42W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PDFN (3.15x3.1)
Package / Case	8-PowerWDFN
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095

Substitute Part Grouping Explanation

Substitute MOSFETs are identified strictly on a parametric basis. Only parts matching the following parameters are considered true substitutes: manufacturer, FET type, technology, drain to source voltage (Vdss), current ratings (Id @ 25°C), drive voltages, maximum on-resistance (Rds On), maximum threshold voltage (Vgs(th)), maximum gate charge, maximum gate-source voltage, input capacitance, power dissipation, operating temperature, surface mount package (8-PDFN/8-PowerWDFN), and compliance statuses (RoHS, REACH, ECCN). Any part listed as a substitute matches these parameters directly.

Key parameters for substitute grouping are:

Manufacturer
FET type
MOSFET technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package/Package
RoHS/REACH/ECCN/HTSUS compliance

Parameter Comparison

Parameter	Main Part: TSM110NB04LCV	Substitute 1: TSM110NB04LCV RGG
Manufacturer	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
Description	40V, 44A, SINGLE N-CHANNEL POWER	40V, 44A, SINGLE N-CHANNEL POWER
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	40 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 44A (Tc)	9A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V
Rds On (Max) @ Id, Vgs	11mOhm @ 9A, 10V	11mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V	24 nC @ 10 V
Vgs (Max)	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	1329 pF @ 20 V	1329 pF @ 20 V
Power Dissipation (Max)	1.9W (Ta), 42W (Tc)	1.9W (Ta), 42W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Supplier Device Package	8-PDFN (3.15x3.1)	8-PDFN (3.15x3.1)
Package / Case	8-PowerWDFN	8-PowerWDFN
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99
HTSUS	8541.29.0095	8541.29.0095
Inventory	844 Pcs New Original In Stock	11139 Pcs New Original In Stock
Part Status / Product Status	Active	Active

Engineering Selection Recommendations

Both TSM110NB04LCV and TSM110NB04LCV RGG are active, RoHS3 compliant, and REACH Unaffected MOSFETs with matching electrical and packaging parameters. They align on ECCN (EAR99) and HTSUS (8541.29.0095) codes. Selection between these models can be based on real-time inventory status and required packaging designations, as both are functionally and mechanically equivalent.

Frequently Asked Questions (FAQ)

Q1: What determines if TSM110NB04LCV RGG is a parametric equivalent to TSM110NB04LCV?
A1: Substitution is confirmed when parameters such as Vdss, Id, Rds(on), package type, mounting, compliance status, and other electrical ratings are identical.

Q2: Are there packaging or mounting concerns when substituting between TSM110NB04LCV and TSM110NB04LCV RGG?
A2: Both parts use surface mount technology and share the 8-PDFN (3.15x3.1)/8-PowerWDFN package, making them mechanically compatible.

Q3: Does the RoHS or REACH status impact substitution?
A3: Both models are ROHS3 compliant and REACH Unaffected; therefore, there are no compliance barriers for substitution.

Q4: Can TSM110NB04LCV RGG be used in all applications designed for TSM110NB04LCV?
A4: Yes, provided all parameters and packaging are equivalent as detailed, there are no restrictions on interchangeability for these parts.

Q5: How does inventory affect substitute selection?
A5: Real-time availability can guide which equivalent model is selected when all technical and compliance criteria are matched.

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