TSM10N06CP ROG N-Channel MOSFET 60V 10A TO-252 Equivalent & Substitute Parts

Part Overview

The TSM10N06CP ROG is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 60V drain-to-source voltage with 10A continuous drain current in a Surface Mount TO-252 (DPAK) package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design requirements and production continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating the functional requirements of the original application.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	10	A
On-State Drain Resistance (Rds On) @ 10A, 10V	65	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Power Dissipation (Tc)	45	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252 (DPAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitute parts for the TSM10N06CP ROG are selected based on the following electrical and mechanical compatibility criteria:

Primary Substitution Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Package Type: Must be TO-252 (DPAK) Surface Mount
FET Type: Must be N-Channel MOSFET
Technology: Must be Metal Oxide Semiconductor

Secondary Compatibility Considerations:

Continuous Drain Current (Id): Substitute parts may exceed the original 10A rating
On-State Drain Resistance (Rds On): Lower values indicate improved performance
Gate Threshold Voltage (Vgs(th)): Must remain within acceptable gate drive voltage ranges
Power Dissipation: Higher ratings provide thermal margin
Operating Temperature Range: Must support the application's thermal requirements

The TSM340N06CP ROG and TSM900N06CP ROG meet all primary substitution criteria and are manufactured by the same supplier (Taiwan Semiconductor Corporation) with identical package specifications and voltage ratings.

Parameter Comparison

Parameter	TSM10N06CP ROG	TSM900N06CP ROG	TSM340N06CP ROG	Unit
Drain-to-Source Voltage (Vdss)	60	60	60	V
Continuous Drain Current (Id) @ 25°C	10	11	30	A
On-State Drain Resistance (Rds On) @ 10V	65 @ 10A	90 @ 6A	34 @ 15A	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	2.5	2.5	V
Gate Charge (Qg) @ Vgs	10.5 @ 4.5V	9.3 @ 10V	16.6 @ 10V	nC
Input Capacitance (Ciss) @ Vds	1100 @ 30V	500 @ 15V	1180 @ 30V	pF
Power Dissipation (Tc)	45	25	66	W
Operating Temperature Range	-55 to 150	-55 to 150	—	°C
Package Type	TO-252 (DPAK)	TO-252 (DPAK)	TO-252 (DPAK)	—
Mounting Type	Surface Mount	Surface Mount	Surface Mount	—
Product Status	Obsolete	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

TSM900N06CP ROG is suitable for applications requiring electrical characteristics closely aligned with the original TSM10N06CP ROG. This substitute provides an 11A continuous drain current rating with comparable power dissipation (25W) and maintains the full operating temperature range (-55°C to 150°C). The TSM900N06CP ROG is classified as Active product status, ensuring long-term availability and supply chain continuity. RoHS3 compliance and REACH unaffected status match the original component's regulatory standing.

TSM340N06CP ROG is suitable for applications where higher current capacity and improved thermal performance are beneficial. This substitute provides 30A continuous drain current with superior on-state drain resistance (34 mOhm) and higher power dissipation rating (66W). The TSM340N06CP ROG is classified as Active product status with RoHS3 compliance. This device accommodates higher current loads and thermal stress conditions while maintaining identical voltage ratings and package specifications. The higher gate charge (16.6 nC) requires consideration in gate drive circuit design.

Both substitute parts are manufactured by Taiwan Semiconductor Corporation and utilize identical TO-252 (DPAK) Surface Mount packaging, ensuring mechanical and thermal compatibility with existing PCB layouts and assembly processes.

Frequently Asked Questions (FAQ)

Q: Can the TSM900N06CP ROG directly replace the TSM10N06CP ROG in all applications?

A: The TSM900N06CP ROG maintains electrical compatibility with the TSM10N06CP ROG across all primary parameters: 60V Vdss rating, N-Channel MOSFET technology, and TO-252 (DPAK) Surface Mount package. The 11A continuous drain current rating exceeds the original 10A specification. Gate threshold voltage (2.5V) is lower than the original (3V), which may affect gate drive timing. Verification of gate drive circuit compatibility is necessary for applications with marginal gate voltage margins.

Q: When should the TSM340N06CP ROG be selected over the TSM900N06CP ROG?

A: The TSM340N06CP ROG is selected when applications require higher current capacity (30A versus 11A) or improved thermal performance. The lower on-state drain resistance (34 mOhm versus 90 mOhm) reduces power dissipation in high-current switching applications. The higher power dissipation rating (66W versus 25W) accommodates demanding thermal environments. Applications with continuous drain currents exceeding 11A or thermal constraints benefit from the TSM340N06CP ROG specification.

Q: Are there package compatibility concerns when substituting these parts?

A: All three devices utilize identical TO-252 (DPAK) Surface Mount packaging with 2 Leads plus Tab configuration (SC-63). PCB footprints, solder pad layouts, and thermal tab connections are mechanically compatible. No PCB redesign is required for substitution.

Q: What is the impact of different gate charge specifications on circuit design?

A: Gate charge (Qg) affects gate drive circuit current requirements and switching speed. The TSM10N06CP ROG specifies 10.5 nC @ 4.5V, the TSM900N06CP ROG specifies 9.3 nC @ 10V, and the TSM340N06CP ROG specifies 16.6 nC @ 10V. Higher gate charge in the TSM340N06CP ROG requires proportionally higher gate drive current to achieve equivalent switching speed. Gate drive circuits must supply sufficient current to charge the gate capacitance within the required switching time window.

Q: How do input capacitance differences affect circuit performance?

A: Input capacitance (Ciss) influences gate drive circuit impedance and switching transient behavior. The TSM10N06CP ROG specifies 1100 pF @ 30V, the TSM900N06CP ROG specifies 500 pF @ 15V, and the TSM340N06CP ROG specifies 1180 pF @ 30V. Lower input capacitance (TSM900N06CP ROG) reduces gate drive current requirements and may improve switching speed. Higher input capacitance (TSM340N06CP ROG) requires higher gate drive current but provides improved noise immunity.

Q: What regulatory compliance considerations apply to these substitute parts?

A: All three devices maintain RoHS3 compliance and REACH unaffected status, ensuring compatibility with environmental and hazardous substance regulations. Moisture Sensitivity Level (MSL) differs: TSM10N06CP ROG is MSL 1 (Unlimited), while TSM900N06CP ROG and TSM340N06CP ROG are MSL 3 (168 Hours). MSL 3 classification requires controlled storage and handling procedures to prevent moisture absorption during component storage and assembly operations.

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