TSM060NB06LCZ Equivalent & Substitute Parts

Part Overview

The TSM060NB06LCZ is an N-Channel MOSFET transistor manufactured by Taiwan Semiconductor Corporation, designed for power switching applications. This device features a 60V drain-to-source voltage rating with continuous drain current capability of 13A at Ta (ambient temperature) and 111A at Tc (case temperature). The component is housed in a Through Hole TO-220-3 package and is classified as Active product status.

Substitute parts are identified to provide design flexibility, inventory alternatives, and supply chain continuity while maintaining electrical and mechanical compatibility within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 111A (Tc)	A
Rds On (Max) @ Id, Vgs	6	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	2.5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	107	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	6273	pF @ 30V
Power Dissipation (Max)	2W (Ta), 156W (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	-
Package / Case	TO-220-3	-
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitute parts for the TSM060NB06LCZ are identified based on strict electrical and mechanical parameter matching. The substitution criteria are defined by the following key parameters:

Electrical Parameters:

Drain to Source Voltage (Vdss): 60V
Continuous Drain Current (Id): 13A (Ta), 111A (Tc)
On-State Drain Resistance (Rds On): 6mOhm @ 13A, 10V
Gate Threshold Voltage (Vgs(th)): 2.5V @ 250µA
Gate Charge (Qg): 107 nC @ 10V
Input Capacitance (Ciss): 6273 pF @ 30V
Power Dissipation: 2W (Ta), 156W (Tc)
Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Parameters:

Mounting Type: Through Hole
Package / Case: TO-220-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Substitute parts must match all electrical specifications and maintain identical mechanical compatibility to ensure direct replacement capability in circuit applications.

Parameter Comparison

Parameter	TSM060NB06LCZ	TSM060NB06LCZ C0G
Manufacturer	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V	60V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 111A (Tc)	13A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs	6mOhm @ 13A, 10V	6mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	107 nC @ 10V	107 nC @ 10V
Vgs (Max)	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	6273 pF @ 30V	6273 pF @ 30V
Power Dissipation (Max)	2W (Ta), 156W (Tc)	2W (Ta), 156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3
Packaging	Tube	Tube
Product Status	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99
HTSUS	8541.29.0095	8541.29.0095

Engineering Selection Recommendations

Both the TSM060NB06LCZ and TSM060NB06LCZ C0G are Active product status components manufactured by Taiwan Semiconductor Corporation. Both parts are ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements.

The TSM060NB06LCZ C0G variant demonstrates higher inventory availability (4826 Pcs) compared to the primary part number (735 Pcs), providing improved supply chain accessibility. Both components are identical in electrical performance and mechanical specifications, supporting direct substitution in circuit designs.

Selection between these parts should be based on inventory availability, lead time requirements, and supply chain considerations. Both parts satisfy identical electrical and mechanical requirements for N-Channel MOSFET applications requiring 60V, 111A (Tc) continuous drain current capability in TO-220-3 Through Hole packaging.

Frequently Asked Questions (FAQ)

Q: Can TSM060NB06LCZ C0G be used as a direct replacement for TSM060NB06LCZ?

A: Yes. Both parts are electrically and mechanically identical. All electrical parameters including Vdss (60V), continuous drain current (13A Ta / 111A Tc), Rds On (6mOhm), gate charge (107 nC), and operating temperature range (-55°C to 150°C) are matched. Both use identical TO-220-3 Through Hole packaging.

Q: Are there any differences in compliance or certification between these parts?

A: No. Both parts carry identical RoHS3 Compliance, REACH Unaffected status, EAR99 ECCN classification, and HTSUS code 8541.29.0095.

Q: What is the significance of the "C0G" designation in TSM060NB06LCZ C0G?

A: The C0G designation is a manufacturing or quality variant identifier. It does not alter electrical specifications or mechanical compatibility. Both part numbers are functionally equivalent.

Q: Can these parts be used interchangeably in existing circuit designs?

A: Yes. Identical electrical parameters, gate drive requirements (4.5V to 10V), input capacitance (6273 pF @ 30V), and thermal characteristics (2W Ta / 156W Tc) ensure direct interchangeability without circuit modification.

Q: What are the key parameters that define substitution eligibility for this MOSFET?

A: Substitution eligibility is determined by: Drain-to-Source Voltage (60V), continuous drain current rating (13A Ta / 111A Tc), on-state resistance (6mOhm @ 13A, 10V), gate threshold voltage (2.5V @ 250µA), operating temperature range (-55°C to 150°C), and TO-220-3 Through Hole package configuration.

Q: Are both parts suitable for high-temperature applications?

A: Yes. Both parts support operating junction temperatures from -55°C to 150°C (TJ) and dissipate up to 156W at case temperature (Tc), making them suitable for thermal management applications requiring extended temperature range operation.

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