TSM043NB04LCZ Equivalent & Substitute Parts Reference

Part Overview

TSM043NB04LCZ is an N-Channel MOSFET from Taiwan Semiconductor Corporation, classified under the Transistors, FETs, MOSFETs category. It offers a drain-source voltage rating of 40 V and a continuous drain current up to 16A (Ta) or 124A (Tc), packaged in a TO-220 through-hole configuration. The part is actively in production with RoHS3 and REACH compliance. Engineers often require alternative models to address inventory constraints or to ensure supply continuity; in this context, substitutes must strictly match parametric and package criteria defined for this product category.

Key Parameters

Manufacturer Part Number	Manufacturer	Category	Description	Detailed Description	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case	RoHS Status	REACH Status	ECCN	HTSUS
TSM043NB04LCZ	Taiwan Semiconductor Corporation	Transistors, FETs, MOSFETs	40V, 124A, SINGLE N-CHANNEL POWE	N-Channel 40 V 16A (Ta), 124A (Tc) 2W (Ta), 125W (Tc) Through Hole TO-220	Active	N-Channel	MOSFET (Metal Oxide)	40 V	16A (Ta), 124A (Tc)	4.5V, 10V	4.3mOhm @ 16A, 10V	2.5V @ 250µA	76 nC @ 10 V	±20V	4387 pF @ 20 V	2W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3	ROHS3 Compliant	REACH Unaffected	EAR99	8541.29.0095

Substitute Part Grouping Explanation

Substitute parts for TSM043NB04LCZ are grouped based only on exact matching of the critical electrical and mechanical parameters provided: FET type, technology, drain-source voltage (Vdss), continuous drain current rating (Id), Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), maximum gate-source voltage (Vgs), input capacitance, power dissipation, operating temperature range, mounting type, device package, RoHS and REACH status, ECCN, and HTSUS code. Only parts that meet these parameters without deviation are included as substitutes.

Parameter Comparison

Parameter	TSM043NB04LCZ	TSM043NB04LCZ C0G
Manufacturer	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
Description	40V, 124A, SINGLE N-CHANNEL POWE	40V, 124A, SINGLE N-CHANNEL POWE
Detailed Description	N-Channel 40 V 16A (Ta), 124A (Tc) 2W (Ta), 125W (Tc) Through Hole TO-220	N-Channel 40 V 16A (Ta), 124A (Tc) 2W (Ta), 125W (Tc) Through Hole TO-220
Product Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	40 V
Current - Continuous Drain (Id) @ 25°C	16A (Ta), 124A (Tc)	16A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.3mOhm @ 16A, 10V	4.3mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	76 nC @ 10 V	76 nC @ 10 V
Vgs (Max)	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	4387 pF @ 20 V	4387 pF @ 20 V
Power Dissipation (Max)	2W (Ta), 125W (Tc)	2W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Supplier Device Package	TO-220	TO-220
Package / Case	TO-220-3	TO-220-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99
HTSUS	8541.29.0095	8541.29.0095

Engineering Selection Recommendations

Both TSM043NB04LCZ and TSM043NB04LCZ C0G possess an active product status, RoHS3 compliance, and REACH unaffected status. These certifications align with common electronic industry regulations and global trade requirements. Selection should be based on matching inventory availability and verifying that product status and compliance parameters are maintained.

Frequently Asked Questions (FAQ)

Q1: What parameters must match for an MOSFET to be considered an equivalent substitute?
A1: Equivalent substitutes require exact matching of FET type, technology, drain-source voltage (Vdss), continuous drain current rating (Id), Rds On, gate threshold voltage (Vgs(th)), gate charge, maximum gate-source voltage, input capacitance, power dissipation, operating temperature range, mounting type, and package.

Q2: Are there any compliance requirements to consider when selecting substitutes?
A2: RoHS3 compliance and REACH unaffected status must be confirmed for both the main part and substitutes. ECCN and HTSUS codes must also be considered for regulatory and import/export purposes.

Q3: What package requirements must be met for mechanical compatibility?
A3: The substitute must have an identical mounting type (Through Hole) and device package (TO-220, TO-220-3) to maintain mechanical compatibility.

Q4: Does product status affect substitution?
A4: Only parts listed with an "Active" product status are eligible for substitution, ensuring current production and supply continuity.

Q5: Can inventory information influence substitute selection?
A5: Substitute selection may be driven by available inventory when all key parameters and compliance criteria match precisely.

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