TSD1GH Equivalent & Substitute Parts

Part Overview

The TSD1GH is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 400 V DC reverse voltage and 1 A average rectified current in a surface mount DO-214AC (SMA) package. This component is classified as Active product status with AEC-Q101 automotive qualification and ROHS3 compliance. Substitute parts are identified when equivalent electrical ratings, mechanical packaging, and compliance certifications align with the original specification, enabling direct replacement in circuit applications without design modification.

Substiute Parts

TSD1GH

Taiwan Semiconductor CorporationIn Stock: 845TSD1GH Datasheet

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ES1G

Good-Ark SemiconductorIn Stock: 415377ES1G Datasheet

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US1GHE3_A/I

Vishay General Semiconductor - Diodes DivisionIn Stock: 26827US1GHE3_A/I Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the TSD1GH are qualified based on the following criteria:

Mandatory Matching Parameters:

• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1 A
• Package / Case: DO-214AC, SMA
• Mounting Type: Surface Mount
• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• Product Status: Active

Allowable Variations:

• Recovery speed classification (Standard vs. Fast Recovery)
• Reverse recovery time (trr)
• Forward voltage (Vf)
• Reverse leakage current (Ir)
• Junction capacitance (Cj)
• Operating temperature range (minimum -55°C required; maximum may vary)

The substitute parts ES1G and US1GHE3_A/I meet all mandatory parameters and are therefore electrically and mechanically compatible with the TSD1GH in applications where the specified voltage and current ratings are the primary design constraints.

Parameter Comparison

Engineering Selection Recommendations

TSD1GH (Taiwan Semiconductor Corporation)

The TSD1GH is suitable for applications requiring standard recovery diode characteristics with a maximum junction temperature of 175°C. This part carries AEC-Q101 automotive qualification, making it appropriate for automotive-grade circuit designs. The standard recovery speed (>500ns) is compatible with lower-frequency switching applications where fast recovery is not a critical design parameter.

ES1G (Good-Ark Semiconductor)

The ES1G provides fast recovery characteristics (≤500ns, trr = 35 ns) with lower junction capacitance (8 pF) compared to the TSD1GH. This substitute is suitable for applications where reduced switching losses and faster diode turn-off are beneficial. The maximum junction temperature is 125°C, which is lower than the TSD1GH. This part does not carry automotive qualification. ES1G is appropriate for commercial and industrial applications where the lower temperature rating is acceptable.

US1GHE3_A/I (Vishay General Semiconductor - Diodes Division)

The US1GHE3_A/I combines fast recovery characteristics (≤500ns, trr = 50 ns) with AEC-Q101 automotive qualification, matching the automotive-grade status of the TSD1GH. The maximum junction temperature is 150°C, which is lower than the TSD1GH but higher than the ES1G. Forward voltage is optimized at 1 V @ 1 A. This part is suitable for automotive applications requiring fast recovery performance while maintaining compliance with automotive qualification standards.

Frequently Asked Questions (FAQ)

Q: Can ES1G directly replace TSD1GH in all applications?

A: ES1G meets the mandatory electrical and mechanical parameters (400 V, 1 A, DO-214AC package, ROHS3 compliance). However, ES1G lacks automotive qualification and has a lower maximum junction temperature (125°C vs. 175°C). Direct replacement is valid only in non-automotive applications or where the 125°C temperature limit is acceptable.

Q: What is the difference between standard and fast recovery diodes?

A: Standard recovery diodes (TSD1GH, >500ns) have longer reverse recovery times, resulting in higher switching losses at high frequencies. Fast recovery diodes (ES1G, US1GHE3_A/I, ≤500ns) turn off more quickly, reducing switching losses and enabling operation at higher switching frequencies. Selection depends on circuit switching speed requirements.

Q: Is US1GHE3_A/I a better choice than TSD1GH for automotive applications?

A: US1GHE3_A/I and TSD1GH are both AEC-Q101 qualified for automotive use. US1GHE3_A/I offers fast recovery characteristics, which may reduce switching losses in high-frequency circuits. TSD1GH offers a higher maximum junction temperature (175°C vs. 150°C). Selection depends on whether fast recovery performance or higher temperature capability is prioritized in the specific application.

Q: Are all three parts available in the same packaging?

A: Yes. All three parts use the DO-214AC (SMA) surface mount package. TSD1GH and US1GHE3_A/I are supplied in Tape & Reel (TR) packaging. ES1G is supplied in Cut Tape (CT) and Digi-Reel® packaging. Packaging format does not affect electrical compatibility; it affects procurement and assembly handling.

Q: What does MSL 1 (Unlimited) mean?

A: Moisture Sensitivity Level 1 (Unlimited) indicates that the component has no moisture sensitivity restrictions. These parts can be stored indefinitely without special moisture control measures and do not require baking before soldering.

Q: Can I use ES1G in a circuit designed for 175°C operation?

A: No. ES1G has a maximum junction temperature of 125°C. Using it in a circuit where junction temperature may exceed 125°C will cause device failure. TSD1GH or US1GHE3_A/I must be used if 150°C or 175°C operation is required.

Q: What is reverse leakage current, and why does it vary among these parts?

A: Reverse leakage current (Ir) is the small current that flows through a reverse-biased diode. TSD1GH specifies 1 µA @ 400 V, ES1G specifies 5 µA @ 400 V, and US1GHE3_A/I specifies 10 µA @ 400 V. Lower leakage is generally preferable in precision analog circuits; higher leakage is acceptable in most power rectification applications.