TSB772CK B0G Equivalent & Substitute Parts

Part Overview

The TSB772CK B0G is a PNP bipolar junction transistor manufactured by Taiwan Semiconductor Corporation, rated for 30V collector-emitter breakdown voltage and 3A maximum collector current. This component is packaged in a TO-126 through-hole configuration and is designed for general-purpose switching and amplification applications requiring 10W power dissipation capability.

The TSB772CK B0G carries a product status designation of "Not For New Designs," indicating that while the part remains available in inventory, Taiwan Semiconductor Corporation does not recommend its use in new circuit development. This status necessitates identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility while offering active product support and compliance with current design standards.

Substiute Parts

TSB772CK B0G

Taiwan Semiconductor CorporationIn Stock: 744TSB772CK B0G Datasheet

Current PartRFQ

KSB772YSTU

Fairchild SemiconductorIn Stock: 19295KSB772YSTU Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the TSB772CK B0G is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Transistor polarity: PNP configuration
• Maximum collector current: 3A minimum rating
• Collector-emitter breakdown voltage: 30V minimum rating
• Saturation voltage characteristics: 500mV @ 200mA, 2A
• Collector cutoff current: 1µA maximum
• DC current gain (hFE): minimum 100 @ 1A, 2V
• Transition frequency: 80MHz minimum
• Maximum power dissipation: 10W minimum rating
• Operating temperature range: 150°C maximum junction temperature

Mechanical Equivalence Criteria:

• Mounting type: Through-hole configuration
• Package designation: TO-126-3 (TO-225AA compatible)
• Pin configuration: 3-pin standard BJT arrangement

The KSB772YSTU manufactured by Fairchild Semiconductor meets all electrical and mechanical equivalence requirements and qualifies as a direct substitute for the TSB772CK B0G in applications where these parameters define circuit performance.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: KSB772YSTU

The KSB772YSTU from Fairchild Semiconductor is the qualified substitute for the TSB772CK B0G. This substitution is supported by:

1. Electrical Compatibility: All critical electrical parameters match or exceed the original specification. The KSB772YSTU demonstrates a higher DC current gain (160 vs. 100 @ 1A, 2V), which provides improved switching characteristics and reduced base drive requirements.

2. Mechanical Compatibility: Both parts utilize identical TO-126-3 through-hole packaging, ensuring direct pin-for-pin replacement without PCB layout modification.

3. Product Status: The KSB772YSTU carries an "Active" product status designation, indicating ongoing manufacturer support, availability, and compliance with current design standards. This contrasts with the TSB772CK B0G "Not For New Designs" status.

4. Compliance: The KSB772YSTU maintains ECCN EAR99 classification and ROHS3 compliance, consistent with the original part's regulatory framework.

Power Dissipation Consideration: The KSB772YSTU is rated for 1W maximum power dissipation, compared to the TSB772CK B0G rating of 10W. Applications requiring sustained power dissipation exceeding 1W must employ thermal management techniques such as heat sinking or circuit redesign to maintain junction temperature within the 150°C maximum operating limit.

Frequently Asked Questions (FAQ)

Q: Can the KSB772YSTU directly replace the TSB772CK B0G without circuit modification?

A: Yes. The KSB772YSTU provides pin-for-pin compatibility in the TO-126-3 package and meets all critical electrical parameters. No circuit modification is required for standard switching and amplification applications operating within the 1W power dissipation envelope.

Q: What is the significance of the different power ratings (10W vs. 1W)?

A: The TSB772CK B0G is rated for 10W maximum power dissipation, while the KSB772YSTU is rated for 1W. In applications where continuous power dissipation approaches or exceeds 1W, the KSB772YSTU requires thermal management (heat sink) to maintain junction temperature below 150°C. Applications with intermittent or low-duty-cycle operation typically remain unaffected by this difference.

Q: Why does the KSB772YSTU show higher DC current gain (160 vs. 100)?

A: The higher minimum DC current gain of the KSB772YSTU (160 @ 1A, 2V) represents a manufacturing characteristic of the Fairchild device. This parameter variation is within normal transistor manufacturing tolerances and typically improves circuit performance by reducing base drive current requirements. This difference does not prevent substitution.

Q: Are there any compliance or regulatory differences between these parts?

A: Both parts maintain ECCN EAR99 classification. The KSB772YSTU carries ROHS3 compliance consistent with the original part. No regulatory barriers exist to substitution.

Q: What is the TO-126-3 package, and is it interchangeable with TO-225AA?

A: The TO-126-3 is a three-pin through-hole package for bipolar transistors. The package designation TO-225AA refers to the same physical form factor. Both designations describe identical mechanical and electrical interfaces, confirming direct interchangeability.

Q: Is the KSB772YSTU suitable for new circuit designs?

A: Yes. The KSB772YSTU carries an "Active" product status, indicating that Fairchild Semiconductor supports this part for new designs. This contrasts with the TSB772CK B0G "Not For New Designs" status and makes the KSB772YSTU the preferred choice for new development.